Untitled
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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Original
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PDF
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR032KL70ZA6F
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M58WR064K
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers
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Original
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PDF
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR064K
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CR14
Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU M58WR064KU VFBGA44 MS-328
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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Original
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PDF
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
CR14
M58WR032KU
VFBGA44
MS-328
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M58WR064K
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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Original
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PDF
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR032KU70ZA6U
M58WR064K
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Untitled
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers
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Original
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PDF
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
|
M58WR064KU
Abstract: 88C0 CR14 M58WR016KL M58WR016KU M58WR032KL M58WR032KU VFBGA44 M58WR064KL
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers
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Original
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PDF
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
88C0
CR14
M58WR032KU
VFBGA44
M58WR064KL
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