CI D 100 Search Results

DB0138

Abstract: CI-2955 CI2955 IEC126 T2607 CI-2970 CI-2740
Contextual Info: CI-GB SHT 1.1 2.92 / .lis\ 2.76 \ .109 / 1.45 / .057 057 \ \ GUTER 1.37 \ .054 / DIAMETER 4.19 / .165 \ 4 . 01 ^ .158 ^ L i 2.31 / .091 \ 2.18 \ .oæ/ T O O .87 /.034 \ .71 f 1. 78 ^. / 07 .070 0 \ L— 1.65 V .065/ CI-2970 CI-2900 d-2955 CI-2748 CI-2746

HM3-6561-9

Abstract: HM3-6561 GG3C 6561 HM165619
Contextual Info: 4fc>E D HARRIS SEMICONP SECTOR 4 3 D 2 2 7 1 □ 0 3 ci D ci l _ T _ • HAS HM-6561 ¡Sì HARRIS S E M I C O N D U C T O R 256 X 4 CMOS RAM February 1992 Description Features • Low Power Standby. 50fiW Max. • Low Power Operation. 20mW/MHz Max.

T6790

Abstract: F50M LB250M
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6790 ISSUE 1 - NOVEMBER 1995 - Ci L L ;= □ B, LJ— c2 c n t o e, |z n Bz c2 r d ¡n n e2 Ci NPN pnp PARTMARKING DETAIL - T6790 ABSOLUTE MAXIMUM RATINGS. NPM PNP UNIT

05Z5.1

Abstract: zener rd
Contextual Info: TOSHIBA b7 { D I S C R E T E / O P T 0> 9097250 - TOSHIBA DISCRETE/OPTO - DE | ci D ci 7 2 S D 67C OOCHSûE 09282 1 D S ilic o n P la n a r T y p e Z e n e r D io d e 0 5 Z 2 7 - 0 5 Z 1 0 0 Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS. REFERENCE VOLTAGE APPLICATIONS.

MC1025

Abstract: MC1024 MC102
Contextual Info: M E C L II MC 1000/1200 series D U A L 2 -IN P U T EXPA N D A B LE G A T ES M CI 024 M CI 224 Provide sim ultaneous O R /N O R or A N D /N A N D o u tp ut functions. These devices contain an internal bias reference insuring th at the threshold p oint is alw ays in the center o f the transition region over

d331

Abstract: 2Sd331 sanyo b514 B514 d331 tr sanyo D330 D331 PNP 2SB515D D331 NPN gat6
Contextual Info: SANYO SEMICONDUCTOR CORP 2SB514, 515 15E ]> I 2SD330, . 331 0003^00 1 j PNP/npn Triple D iffu sed P lan a r S ilic o n T ra n sisto rs ' 2oioa 7 ci ci ? D 7 b 2012 Low Frequency Power Amp Applications 3970 Especially suited for use in output stage of 10W AF Power amp.

DGM122

Contextual Info: ci 2-Channel M onolithic DPST i P M O S Switch w ith Driver û Ci s Siliconix d e s ig n e d f o r . . . BENEFITS • Com m unication Systems • ■ P o rtab le, B a tte ry O p e ra te d Units • Low Leakage o < 1 nA ■ Sam ple and Hold Circuits •

1A Dual Power Operational Amplifier

Abstract: 4036A
Contextual Info: V T C 33E IN C D cl 3 ô f l ci 2 ci DDD3D1S 3 IVTC VA705 HIGH-SPEED PRECISION OPERATIONAL AMPLIFIER VTC Incorporated DISCONTINUED FEATURES • Fast Settling Time: ±0.1% in 250ns • High Slew Rate: 35V/|iS • Wide Gain Bandwidth: 25MHz • Low Offset Voltage: 1mV

Contextual Info: S G S-THOriSON 7ÖC D \ 0007^07 H 7 ci 5 ci e 3 7 BTA/BTB 40, A TRIACS T • .» if - * * - - ‘ j * This nevv design of plastic insulated power triacs offers maximum efficiency with maximum ease of mounting. FEATURES : — Glass passivated chip. Fast-on connexions.

Contextual Info: S EM IC O N D U C T O R KRC241S-KRC246S TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR HIGH C U R R E N T S WI TC HI NG APPLICATI ON. I NTERFACE CI RCUIT AN D DRI VER CI RCUIT APPLICATI ON. F EAT URE S DIM • With Built-in Bias Resistors. • Simplify Circuit Design.

5085AN

Abstract: APT5085AN 4585AN 451R1
Contextual Info: ADVANCED POlilFR T E C H N O L O G Y 4TE D D E S 7 ci a t1 G G DO Hb f i POWER MOS IV IAVP ADVANCED POWER Te c h n o lo g y O D O s SbT APT5085AN APT4585AN APT501R1AN APT451R1AN 500V 450V 500V 450V 8.5A 8.5A 7.5A 7.5A 0.85 0.85 1.10 1.10 n CI Q n N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

full subtractor

Abstract: MC1021 ripple borrow subtractor MC1221 1t80 T-135-1 YXB series
Contextual Info: FULL SUBTRACTORS M CI 021 \ MECL II MC 1000/1200 series M CI 221 Provides th e D IF F E R E N C E . D IF F E R E N C E . BORROW O U T, and B O RR OW O U T fu n c tio n s w hile req u irin g o n ly M IN UEND XI a nd SU BTR A H E N D IY in p u ts w ith BO RROW IN and

T272i

Abstract: 2SC 5802 2SD1961 R2713 c 5802 transistor L2000 mrrr 2SD1962M 2SD2097 2SD2098
Contextual Info: ROHM CO L T » h7 40E /Transistors » Bi 7 Û S Ô ci ci cî OOObDST ö «RHM 2SD1961/2SD1962M/2SD2097/2SD2098 2 S D 1 S 6 1 /2 S D 1 962M S S 2 S D 2 C 9 7 /2 S ÎD 2 C 9 3 Vt>4V:'A'vJ|*J' NPN y y a > Epitaxial Planar NPN Silicon Transistor 1W f i xt'iiEl/'Dlm ensions Unît; mm

Contextual Info: SM-8 DUAL NPN MEDIUM POWER TRANSISTORS ZDT649 ISSUE 1 - NOVEMBER 1995 Ci l- L H D Bi Ci I. I, IO E, C2 I I HJ b2 C2 | _ L 1 1 E? PARTMARK1NG DETAIL - T649 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO 35 V C ollector-E m itter Voltage

Contextual Info: SEM ICONDUCTOR KRA566U-KRA572U TECHNI CAL DATA EPI TAXI AL PLANAR PNP T RANSI ST OR S WI TC HI NG APPLICATI ON. I NTERFACE CI RCUIT AN D DRI VER CI RCUIT APPLICATI ON F EAT URE S • With Built-in Bias Resistors. DIM A Al • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

2N6121

Contextual Info: • 7^E^S37 □ D S ci 3 ô ci fi ■ 3 3 H \ f Z 7 SGS-THOMSON 2N6121/22/23 ^ 7 # IM@[M [i[L[i@¥E»nûS_ 2N6124/25/26 S G S - THOMS ON 3 PE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N6121, 2N6122 and 2N6123 are silicon epi­

K1412

Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Contextual Info: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP

diode esm

Contextual Info: S ic S G S—THOMSON « i D 1• T H O M S O N -C S F ? ci a ci 5 3 ? E S M MWieiAkl CCàil/*/MirM i m i mo DISCRETS DIVISION SEMICONDUCTEURS 000231b 2 4 4 -5 0 , R " " * ESM 244-600, (R) SU PER SW ITC H f a s t r e c o v e r y r e c t i f i e r d io d e s

insertion force

Contextual Info: M PR E CI NE D ON S I CHI A CONTACT DATA PINS Insertion / Extraction Force Graphs #04 CONTACT 1000 #04 CONTACT FOR .008-.013 DIAMETER PINS δ=.003 3-FINGER FORCE (grams) INITIAL INSERTION FORCE INSERTION FORCE 2nd CYCLE EXTRACTION FORCE 100 D OPERATING RANGE

Contextual Info: M PR E CI NE D ON S I CHI A CONTACT DATA PINS Insertion / Extraction Force Graphs #04 CONTACT 1000 #04 CONTACT FOR .008-.013 DIAMETER PINS δ=.003 3-FINGER FORCE (grams) INITIAL INSERTION FORCE INSERTION FORCE 2nd CYCLE EXTRACTION FORCE 100 D OPERATING RANGE

VPA12

Abstract: vpa13 vpa10
Contextual Info: SANY O SEMICONDUCTOR CORP b3E D WÊ 7 ci ci ? G 7 b DGlElbbE! 47b • TSA J VPA 13 SÆÊYO PB E T H y b r id 1C V 1d e o P a c k VPA S e r 1a s V I d e o O u t p u t A m p l 1 f 1 e r s f o rH 1g h ~ R e so 1u t i o n CRT D is p la y s i O v e rv le w

2SA739

Abstract: 33 aj AC73
Contextual Info: TOSHIBA D E ^ TCHTESD { D I S CRETE/OPTO} DD07E33 SILICON PNP TRIPLE DIFFUSED MESA TYPE 9097250 TOSHIBA T-33*ai CDISCRETE/OPTO INDUSTRIAL APPLICATIONS _ Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES : • ' . ' ä IO •s oí ci

ABB GES 9 515

Abstract: optoacoplador calculo placas orificio FEX300 transformador EJEMPLOS DE DIRECTIVAS ATEX D173D027U01 cable spec dell lcd 17 power supply diagram EMV D173D027U01 configuracion del transistor bra 94
Contextual Info: CI/FEX300/FEX500-X1 Inbetriebnahmeanleitung Magnetisch-induktiver Durchflussmesser Commissioning Instruction Electromagnetic Flowmeter Notice de mise en exploitation Débitmètre électromagnétique Instrucciónes de Puesta en Marcha Medidor electromagnético de caudal

814800

Abstract: cr2927 814800S
Contextual Info: FUJITSU LTD S3E » • 374<ì75b DDD34D3 ^ ci ci « F C A J c O May 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 8 0 0 A -70/-80/-10 CMOS 512KX.8 BIT FAST PAGE MODE D YNAMIC RAM CMOS 524,288 x 8 bit Fast Page Mode Dynamic RAM The Fujitsu MB814800Ais a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304