Hitachi DSA00279
Abstract: No abstract text available
Text: HL8325G GaAlAs Laser Diode ADE-208-582A Z 2nd Edition Dec. 2000 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It
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HL8325G
ADE-208-582A
HL8325G
HL8325G:
D-85622
Hitachi DSA00279
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HL8325G
Abstract: No abstract text available
Text: HL8325G GaAlAs Laser Diode ODE-208-582C Z Rev.3 Mar. 2005 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It
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HL8325G
ODE-208-582C
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HL8333G
Abstract: No abstract text available
Text: HL8333G GaAlAs Laser Diode ODE-208-014 Z Rev.0 May. 2005 Description The HL8333G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It
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ODE-208-014
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HL8325G
Abstract: Hitachi DSA0047
Text: HL8325G GaAlAs Laser Diode ADE-208-582A Z 2nd Edition Dec. 2000 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is
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ADE-208-582A
HL8325G
HL8325G:
Hitachi DSA0047
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Untitled
Abstract: No abstract text available
Text: HL8325G ODE-208-048 Z Rev.0 Oct. 17, 2006 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light
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HL8325G
HL8325G
ODE-208-048
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Untitled
Abstract: No abstract text available
Text: HL8325G ODE-208-048B Z Rev.2 Feb. 01, 2008 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light
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HL8325G
ODE-208-048B
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Untitled
Abstract: No abstract text available
Text: HL8325G ODE2051-00 M Rev.0 Aug. 01, 2008 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 m band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light
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HL8325G
HL8325G
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HL8325G
Abstract: No abstract text available
Text: HL8325G ODE-208-048A Z Rev.1 May 08, 2007 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light
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Hitachi DSA002726
Abstract: No abstract text available
Text: HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical
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HL8325G
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Hitachi DSA002726
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HL8325G
Abstract: No abstract text available
Text: HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical
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Hitachi DSA00164
Abstract: No abstract text available
Text: HL8325G GaAlAs Laser Diodes ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is
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ADE-208-582
HL8325G
D-85622
Hitachi DSA00164
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Untitled
Abstract: No abstract text available
Text: iC-WJB 2.7V LASER DIODE DRIVER Rev C1, Page 1/12 FEATURES APPLICATIONS ° ° ° ° ° ° ° ° ° ° LD driver for continuous or pulsed operation CW to 300kHz of up to 100mA Average control of laser power Simple LD power adjustment via external resistor
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100mA
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170KW
Abstract: No abstract text available
Text: iC-WJB 2.7 V LASER DIODE DRIVER Rev E1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA
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IN350,
170KW
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Untitled
Abstract: No abstract text available
Text: iC-WJB 2.7 V LASER DIODE DRIVER Rev D1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA
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G003
Abstract: G008 G010 iC-WJ SO8
Text: iC-WJB 2.7 V LASER DIODE DRIVER Rev D1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA
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G003
G008
G010
iC-WJ SO8
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zd6v8
Abstract: G003 G008 G010 CG013
Text: iC-WJB 2.7 V LASER DIODE DRIVER Rev E1, Page 1/12 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Battery supplied LD modules ♦ LD Pointers Simple APC adjustment via an external resistor Continuous CW or pulsed operation of up to 300 kHz Laser diode current of up to 100 mA
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zd6v8
G003
G008
G010
CG013
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MA177
Abstract: No abstract text available
Text: HL8325G GaAIAs Laser Diode Description The HL8325G is a high-power 0.8 jim band GaAIAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types o f optical
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HL8325G
HL8325G
HL8325G:
MA177
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Rsens and RREF
Abstract: No abstract text available
Text: . VM8001 LASER POWER AMPLIFIER PRELIMINARY FEATURES • High-Performance Integrated Circuit for Laser Diode Drive and Power Monitoring • Single +5-Volt Supply • Voltage-Controlled Read and Write Currents from 10 to 100 mA • 4 ns Rise and Fall Write Current Pulses With Only 3%
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VM8001
20-Lead
Rsens and RREF
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Untitled
Abstract: No abstract text available
Text: HL8325G GaAlAs Laser Diodes HITACHI ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 (Am band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is
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HL8325G
ADE-208-582
HL8325G
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VM8001
Abstract: VTC PLCC
Text: VM 8001 Value the Customer LASER POWER AMPLIFIER PRELIMINARY FEATU R ES • High-Performance Integrated Circuit for Laser Diode Drive and Power Monitoring • Single +5-Volt Supply • Voltage-Controlled Read and Write Currents from 10 to 100 mA • 4 ns Rise and Fall Write Current Pulses With Only 3%
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20-lead
VM8001
-15mA
VTC PLCC
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zd6v8
Abstract: N231
Text: iC-WJB if f if ll 2.7V LASER DIODE DRIVER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ LD driver for continuous or pulsed operation CW to 300kHz of up to 250mA Average control of laser power Simple LD power adjustment via external resistor
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300kHz)
250mA
D-55294
zd6v8
N231
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MIL-STD-883H
Abstract: No abstract text available
Text: iC-WJB 2 .7 V LASER DIODE DRIVER F ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ E A T U R E S _ _ LD driver for continuous or pulsed operation CW to 300kHz o f up to 250mA Average control of laser power Simple LD power adjustment via external resistor
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300kHz)
250mA
MIL-STD-883H
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LA167
Abstract: LA-63 LA-68 LA60
Text: LASER DIODE INC 1SE D | S305TÛS D0GGM75 fi | LA-60 SERIES LA-160 SERIES LASER DIODE, INC._ 850nm PULSED GaAIAs LASER DIODES T - f l- e e FEATURES > Wavelength Selection Available from 780 to 880 nm P High Efficiency at Low Drive Currents P Up to 90 Watts Peak Power Output
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S305T
D0GGM75
LA-60
LA-160
850nm
780nm
880nm.
LA167
LA-63
LA-68
LA60
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LA-167
Abstract: laser diode 780 nm cd dual beam laser circuit laser diode pulsed LA-160 LA-162 LA-163 LA167 LA-60 LA-63
Text: LASER DIODE INC 15E D | S3BS^flS 00D0M75 A | LA-60 SERIES LA-160 SERIES LASER DIODE, INC. T -H -i'O C 850nm PULSED GaAIAs LASER DIODES FEATURES P W avelength Selection Available from 780 to 880 nm P High Efficiency a t Low Drive Currents t> Up to 90 Watts Peak Power O utput
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LA-60
LA-160
850nm
780nm
880nm.
LA-167
laser diode 780 nm cd
dual beam laser
circuit laser diode pulsed
LA-162
LA-163
LA167
LA-63
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