Hitachi DSA002726
Abstract: No abstract text available
Text: HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical
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HL8325G
HL8325G
HL8325G:
Hitachi DSA002726
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HL8325G
Abstract: No abstract text available
Text: HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical
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HL8325G
HL8325G
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HL8325G
Abstract: No abstract text available
Text: HL8325G ODE-208-048A Z Rev.1 May 08, 2007 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light
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HL8325G
ODE-208-048A
HL8325G
HL8325G:
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HL8325G
Abstract: No abstract text available
Text: HL8325G GaAlAs Laser Diode ODE-208-582C Z Rev.3 Mar. 2005 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It
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HL8325G
ODE-208-582C
HL8325G
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Untitled
Abstract: No abstract text available
Text: HL8325G ODE-208-048B Z Rev.2 Feb. 01, 2008 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light
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HL8325G
ODE-208-048B
HL8325G
HL8325G:
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Untitled
Abstract: No abstract text available
Text: HL8325G ODE2051-00 M Rev.0 Aug. 01, 2008 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 m band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light
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HL8325G
HL8325G
ODE2051-00
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Hitachi DSA00164
Abstract: No abstract text available
Text: HL8325G GaAlAs Laser Diodes ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is
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HL8325G
ADE-208-582
HL8325G
D-85622
Hitachi DSA00164
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Hitachi DSA00279
Abstract: No abstract text available
Text: HL8325G GaAlAs Laser Diode ADE-208-582A Z 2nd Edition Dec. 2000 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It
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HL8325G
ADE-208-582A
HL8325G
HL8325G:
D-85622
Hitachi DSA00279
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HL8325G
Abstract: Hitachi DSA0047
Text: HL8325G GaAlAs Laser Diode ADE-208-582A Z 2nd Edition Dec. 2000 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is
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HL8325G
ADE-208-582A
HL8325G
HL8325G:
Hitachi DSA0047
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Untitled
Abstract: No abstract text available
Text: HL8325G ODE-208-048 Z Rev.0 Oct. 17, 2006 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light
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HL8325G
HL8325G
ODE-208-048
HL8325G:
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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opnext
Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-090103
opnext
HL1359CP
laser diode bare chip 1550
DFB laser bare die
HL1357CP
HL1511AF
HL1513AF
laser diode for optical communication
Laser Diode 1550 nm dBm
dfb 10g
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hitachi DC9300
Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes
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635nm
830nm
HE7601
HE8404
HE8807
HE8811
HE8812
HE7601SG
HE8404SG
hitachi DC9300
1550nm Laser Diode with butterfly pin package
DC9300
1550nm Laser Diode butterfly
hitachi HL7851G
DR9301
780nm 10mW laser diodes
LB7671
RCV5932
laser DFB 1550nm 10mW
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650nm 50mw
Abstract: 780nm 5MW infrared laser diodes photo magneto electric camera hitachi HL6738 laser diode DVD 780nm 10mW laser diodes Hitachi DSAUTAZ005 ld261 PO40
Text: ADE-508-011C Information and Industry Laser Diodes Information and Industry Laser Diodes Application Note Publication Date: 1st Edition, June 1996 4th Edition, February 1999 Published by: Electronic Devices Sales & Marketing Group Semiconductor & Integrated Circuits
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ADE-508-011C
HL8325G
650nm 50mw
780nm 5MW infrared laser diodes
photo magneto electric
camera hitachi
HL6738
laser diode DVD
780nm 10mW laser diodes
Hitachi DSAUTAZ005
ld261
PO40
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opnext
Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-09
opnext
laser diode DVD 100mw
opnext laser diode
660nm 100mw
HL6348MG
HL1357CP
HL1511AF
HL1513AF
HL6314MG
1310nm fp 10g
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laser diode 940 nM 200mW
Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and
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200mW
laser diode 940 nM 200mW
LD5033
80km* opnext
ps7055
LE7062
laser DFB chip 1310nm 2.5G
LB7962
10G APD chip
HL6530MG
Photodiode, 1550nm, butterfly package
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laser diode 670nm 40mW
Abstract: dvd writer laser "Hitachi Kodaira Semiconductor" low noise, 780nm, 5mw 650NM laser diode 5mw ADE-508-011E photo magneto electric hitachi laser diode HL6720G 650nm 5mw laser with collimator
Text: Information and Industry Laser Diodes Application Note ADE-508-011E Hitachi 5/14/01 Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human
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ADE-508-011E
laser diode 670nm 40mW
dvd writer laser
"Hitachi Kodaira Semiconductor"
low noise, 780nm, 5mw
650NM laser diode 5mw
ADE-508-011E
photo magneto electric
hitachi laser diode
HL6720G
650nm 5mw laser with collimator
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lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
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HD49323A
HA12134A
HA12141N
HA12155N
HA12163
HA12167F
HA12173
HA12179F
HA12181F
HA12187F
lvc16244
BC240
2sk3174
CBT1G125
LV2GT14A
HC32 Hitachi
HA13557A
transistor 2SC1162
H8 hitachi programming manual
30204SP
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HL6362MG
Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated
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2008B
D-85622
HL6362MG
HL6355MG
hl6344g
HL6366DG
HL6750MG
HL6545MG
HL6348MG
opnext l
HL6354MG
HL8341MG
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Untitled
Abstract: No abstract text available
Text: HL8325G GaAIAs LD Description The HL8325G is a high-power 0.8 jim band GaAIAs la ser diode with a TQW i triple quantum w ell structure. Its internal circuit configuration is suited for oper ation on a single positiv e supply voltage. It is suitable as a light source for optical disk memories, card re aders and various other types o f optical equipment.
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HL8325G
HL8325G
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Untitled
Abstract: No abstract text available
Text: HL8325G GaAlAs Laser Diodes HITACHI ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 (Am band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is
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HL8325G
ADE-208-582
HL8325G
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MA177
Abstract: No abstract text available
Text: HL8325G GaAIAs Laser Diode Description The HL8325G is a high-power 0.8 jim band GaAIAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types o f optical
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HL8325G
HL8325G
HL8325G:
MA177
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HL7806
Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G
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HL6314M
HL6316G
HL6411G*
HL6315G
HL6312G
6313G
HL6720G
HL6724M
HL6712G
HL6722G
HL7806
6808X
L7851
hl7852
HL6411G
HL8325G
hitachi HL7852
hl7806g
HL7851
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HL7806
Abstract: HE8807CL HL7812G HE8811 HL7812 he130
Text: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,
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HLP5400,
HL1322A,
HL1341A,
HL1362A,
HL1521A,
HL1541A,
HL1551A
HL1321AC,
HL1322AC,
HL1341AC,
HL7806
HE8807CL
HL7812G
HE8811
HL7812
he130
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