Untitled
Abstract: No abstract text available
Text: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate
|
Original
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2N7638-GA
2N7638
8338E-48
0733E-26
73E-10
86E-10
90E-2
2N7638-GA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area
|
Original
|
2N7636-GA
2N7636
8338E-48
0733E-26
37E-10
97E-10
50E-02
2N7636-GA
|
PDF
|
2n2222 spice model
Abstract: No abstract text available
Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate
|
Original
|
2N7637-GA
2N7637
8338E-48
0733E-26
73E-10
86E-10
90E-2
2N7637-GA
2n2222 spice model
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area
|
Original
|
2N7635-GA
2N7635
8338E-48
0733E-26
37E-10
97E-10
50E-02
2N7635-GA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package • RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate
|
Original
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2N7639-GA
2N7639-GA
8338E-48
0733E-26
2281E-10
33957E-9
20E-03
|
PDF
|
diode 0A70
Abstract: GA05JT01-46
Text: GA05JT01-46 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity
|
Original
|
GA05JT01-46
GA05JT01
8338E-48
0733E-26
16E-10
021E-10
050E-2
diode 0A70
GA05JT01-46
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package • RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch
|
Original
|
2N7640-GA
2N7640
8338E-48
0733E-26
2281E-10
33957E-9
20E-03
2N7640-GA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity
|
Original
|
GA05JT03-46
GA05JT03
8338E-48
0733E-26
16E-10
021E-10
050E-2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features • VDS = 600 V RDS ON = 25 mΩ ID (Tc = 25°C) = 100 A hFE (Tc = 25°C) = 105 Package 225°C maximum operating temperature Gate Oxide Free SiC Switch
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Original
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GA50JT06-258
O-258
GA50JT06
00E-47
26E-26
3989E-9
026E-09
00E-3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity
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Original
|
GA50JT12-247
O-247
GA50JT12
833E-48
073E-26
398E-9
026E-09
00E-3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch
|
Original
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GA20SICP12-263
O-263-7L)
Applicatio0SICP12
GA20SICP12
833E-48
073E-26
752E-12
01E-09
50E-03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA50JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity
|
Original
|
GA50JT17-247
O-247
GA50JT17
833E-48
073E-26
398E-9
026E-09
00E-3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier
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Original
|
GA10SICP12-247
O-247AB
427E-12
1373E-12
0E-03
GA10SICP12
55E-15
71739E-05
40E-10
00E-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier
|
Original
|
GA20SICP12-247
O-247AB
0SICP12
GA20SICP12
833E-48
073E-26
752E-12
01E-09
50E-03
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity
|
Original
|
GA16JT17-247
O-247
GA16JT17
833E-48
073E-26
4E-12
014E-09
500E-3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA10JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity
|
Original
|
GA10JT12-263
O-263-7L)
GA10JT12
833E-48
073E-26
39E-12
1373E-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA20JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity
|
Original
|
GA20JT12-263
O-263-7L)
GA20JT12
833E-48
073E-26
4E-12
014E-09
500E-3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity
|
Original
|
GA04JT17-247
O-247
GA04JT17
8338E-48
0733E-26
254E-12
0E-1209
|
PDF
|
ga10jt12
Abstract: No abstract text available
Text: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity
|
Original
|
GA10JT12-247
O-247
GA10JT12
833E-48
073E-26
39E-12
1373E-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA100JT12-227 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier
|
Original
|
GA100JT12-227
OT-227
GA100JT12-227
GA100JT12
833E-48
073E-26
398E-9
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity
|
Original
|
GA05JT12-247
O-247
GA05JT12
8338E-48
0733E-26
254E-12
0E-1209
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES Universal Multichannel Industrial Signal Conditioning ADC PRELIMINARY TECHNICAL DATA AD280 FEATURES Four Input Channels, w ith Protection and Switchable A ttenuation Provision for Cold Junction Sensor Programmable Excitation Sources for RTD M easure
|
OCR Scan
|
18-Bit
44-Lead
|
PDF
|
P113E
Abstract: OP413 equivalent ely 0325
Text: ANALOG DEVICES Low Noise, Low Drift Single-Supply Operational Amplifiers OP113/OP213/OP413 FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 nV/VHz @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jjiV Very Low Drift: 0.2 jjiV / X Unity Gain Stable
|
OCR Scan
|
OP113/OP213/OP413
OP113
1805a-0-2/98
P113E
OP413 equivalent
ely 0325
|
PDF
|
AD685
Abstract: cjc hv capacitor
Text: ANALOG DEVICES Universal Multichannel Industrial Signal Conditioning ADC PRELIMINARY TECHNICAL DATA AD280 FEATURES Four Input Channels, w ith Protection and Switchable A ttenuation Provision for Cold Junction Sensor Programmable Excitation Sources for RTD M easure
|
OCR Scan
|
AD280
18-Bit
280-ED
44-Lead
AD685
cjc hv capacitor
|
PDF
|