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    GA20JT12 Price and Stock

    GeneSic Semiconductor Inc GA20JT12-247

    TRANS SJT 1200V 20A TO247AB
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    DigiKey GA20JT12-247 Tube 510
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    NAC GA20JT12-247 30
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    GeneSic Semiconductor Inc GA20JT12-263

    TRANS SJT 1200V 45A D2PAK
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    DigiKey GA20JT12-263 Tube 1,250
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    Quest Components GA20JT12-263 13
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    NAC GA20JT12-263 500
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    Navitas Semiconductor GA20JT12-263

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    Onlinecomponents.com GA20JT12-263
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    GA20JT12 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA20JT12-247 GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 1.2KV 20A Original PDF
    GA20JT12-263 GeneSiC Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS SJT 1200V 45A Original PDF

    GA20JT12 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-263 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA20JT12-263. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-JUN-2015 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA20JT12-263 GA20JT12-263. 05-JUN-2015 GA20JT12 833E-48 073E-26 4E-12 014E-09

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-247 Section VII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA20JT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.1 $ * $Date: 29-JAN-2015 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA20JT12-247 GA20JT12-247. 29-JAN-2015 GA20JT12 833EAND 833E-48 073E-26 4E-12 014E-09

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA20JT12-263 O-263-7L) GA20JT12 833E-48 073E-26 4E-12 014E-09 500E-3

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA20JT12-247 O-247 GA20JT12 833E-48 073E-26 4E-12 014E-09 500E-3

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1200 V 60 mΩ 45 A 80 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area


    Original     		PDF GA20JT12-CAL GA20JT12 00E-47 26E-28 4E-12 014E-09 500E-3

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA20JT12-263 O-263 GA20JT12 00E-47 26E-28 98E-10 22E-9 00E-3

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet* GA20JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 1200 V 1.4 V 20 A 70 m Features •       175 °C maximum operating temperature Temperature independent switching performance


    Original     		PDF GA20JT12-CAL GA20JT12 00E-47 26E-28 98E-10 22E-9 00E-3 GA20JT12-CAL

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA20JT12-247 O-247AB GA20JT12 00E-47 26E-28 98E-10 22E-9 50E-3

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-CAL Section VIII: SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA20JT12-CAL.


    Original     		PDF GA20JT12-CAL sic/sjt/GA20JT12-CAL GA20JT12-CAL. 25-AUG-2014 GA20JT12 00E-47 26E-28 4E-12 014E-09 500E-3

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA20JT12-247 O-247AB GA20JT12 00E-47 26E-28 98E-10 22E-9 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards


    Original     		PDF GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch


    Original     		PDF GA20SICP12-263 O-263-7L) Applicatio0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03

    Untitled

    Abstract: No abstract text available
    Text: Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation GA15IDDJT22-FR4 VISO,min PDrive, cont PDrive,switch fMAX Features Package •      RoHS Compliant Requires single 12 V voltage supply Two-voltage level topology with low drive losses


    Original     		PDF GA15IDDJT22-FR4 GA50JT12-247 GA50SICP12-227 GA100SICP12-227