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    Cornell Dubilier Electronics Inc 475CKE250M

    CAP ALUM 4.7UF 20% 250V RADIAL
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    DigiKey 475CKE250M Bulk 28,563 1
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    Mouser Electronics 475CKE250M 8,807
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    • 10 $0.159
    • 100 $0.109
    • 1000 $0.098
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    TTI 475CKE250M Bulk 32,000
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    Cornell Dubilier Electronics Inc 105CKE250M

    CAP ALUM 1UF 20% 250V RADIAL TH
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    DigiKey 105CKE250M Bulk 19,982 1
    • 1 $0.33
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    • 100 $0.1225
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    Mouser Electronics 105CKE250M 1,908
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    • 1000 $0.083
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    Cornell Dubilier Electronics Inc 226CKE250MLU

    CAP ALUM 22UF 20% 250V RADIAL TH
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    DigiKey 226CKE250MLU Bulk 3,477 1
    • 1 $0.94
    • 10 $0.581
    • 100 $0.94
    • 1000 $0.28803
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    Mouser Electronics 226CKE250MLU 113
    • 1 $0.78
    • 10 $0.356
    • 100 $0.315
    • 1000 $0.241
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    Cornell Dubilier Electronics Inc 107CKE250MQV

    CAP ALUM 100UF 20% 250V RADIAL
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    DigiKey 107CKE250MQV Bulk 2,857 1
    • 1 $2.6
    • 10 $1.689
    • 100 $1.2055
    • 1000 $0.94785
    • 10000 $0.84295
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    Mouser Electronics 107CKE250MQV 2
    • 1 $2.22
    • 10 $1.67
    • 100 $1.15
    • 1000 $1.02
    • 10000 $0.829
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    TTI 107CKE250MQV Bulk 4,200
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    Cornell Dubilier Electronics Inc 226CKE200MLQ

    CAP ALUM 22UF 20% 200V RADIAL TH
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    DigiKey 226CKE200MLQ Bulk 596 1
    • 1 $0.92
    • 10 $0.567
    • 100 $0.3799
    • 1000 $0.28026
    • 10000 $0.23978
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    Mouser Electronics 226CKE200MLQ 500
    • 1 $0.84
    • 10 $0.425
    • 100 $0.304
    • 1000 $0.255
    • 10000 $0.239
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    TTI 226CKE200MLQ Bulk 800
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    • 1000 $0.247
    • 10000 $0.231
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    CKE2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply


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    AS4DDR32M72PBG1 32Mx72 333Mbps 23mm-1 208-PBGA PDF

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


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    AS4DDR232M72PBG 32Mx72 AS4DDR232M72PBG PDF

    ACT-D16M96S

    Abstract: BSA1 BS-B1
    Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM


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    ACT-D16M96S 16MegaBit 50-MHz 192-cycle SCD3370 BSA1 BS-B1 PDF

    lmc6762

    Abstract: intel core i5 650 processor st 2n2222a 82371AB 82443BX 245417 intel mobile pentium III 600 650 mhz MD22 equivalent mmc-1 celeron MMC-2
    Text: Celeron Processor Mobile Module: Mobile Module Connector 2 MMC-2 at 700 MHz, 650 MHz, 600 MHz, 550 MHz, 500 MHz, and 450 MHz Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ ■ Mobile Celeron processor with processor speeds of 700 MHz, 650 MHz, 600 MHz,


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    128-K lmc6762 intel core i5 650 processor st 2n2222a 82371AB 82443BX 245417 intel mobile pentium III 600 650 mhz MD22 equivalent mmc-1 celeron MMC-2 PDF

    DPDD192MX8XSBY5

    Abstract: No abstract text available
    Text: ADVANCE D COM P ON E NTS PACKAG I NG 1.5 Gigabit CMOS DDR SDRAM DPDD192MX8XSBY5 • • R I T FEATURES: O • • • • • VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC A13 VDD DNU CS2 WE CAS RAS CS0 CS1 BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1


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    DPDD192MX8XSBY5 A10/AP 30A254-03 DPDD192MX8XSBY5 PDF

    FW82443MX100

    Abstract: Q728 440MX intel pciset 82443MX AC97 intel DOC PIIX4E 31X24
    Text: R Intel 82443MX PCIset Specification Update April 2001 Notice: The Intel® 82443MX PCIset may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.


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    82443MX FW82443MX100 Q728 440MX intel pciset AC97 intel DOC PIIX4E 31X24 PDF

    H8/3005

    Abstract: HD6413004F HD6413004TE HD6413004VF HD6413004VTE HD6413005F HD6413005VF OMC952723089
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    FP-80A) TFP-80C) H8/3004, H8/3005 HD6413004F HD6413004TE HD6413004VF HD6413004VTE HD6413005F HD6413005VF OMC952723089 PDF

    hd6417604sf28

    Abstract: GE SCR Manual circut diagram of power supply of computer Hitachi Stacked CSP Hitachi Stacked CSP memory MAS 10 RCD SCR bt 107 SH7604 SH7000 HD6417604SVF20
    Text: SH7604 Hardware Manual ADE-602-085C Rev. 4.0 9/19/01 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in


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    SH7604 ADE-602-085C TBP-176 SH7604 hd6417604sf28 GE SCR Manual circut diagram of power supply of computer Hitachi Stacked CSP Hitachi Stacked CSP memory MAS 10 RCD SCR bt 107 SH7000 HD6417604SVF20 PDF

    82443BX

    Abstract: 443BX 82371EB PIIX4E HA21C
    Text: Intel 440BX AGPset: 82443BX Host Bridge/Controller Datasheet April 1998 Order Number: 290633-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability


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    440BX 82443BX 04565-001-Sao USA/0498/PSA 443BX 82371EB PIIX4E HA21C PDF

    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count


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    W3E16M64S-XBX 16Mx64 266Mbps PDF

    Untitled

    Abstract: No abstract text available
    Text:  35 /,0,1$5<,1 250$7,21 /'*%* *E''56'5$0,QWHJUDWHG0RGXOH ,02' %HQHILWV )($785(6 ''56'5$0'DWD5DWH  DQG0ESV  3DFNDJH  xPP[PP(QFDSVXODWHG %DOO*ULGDUUD\ 3%*$ EDOOV PPSLWFK 9”9&RUH3RZHUVXSSO\


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    265mm2 1060mm2 625mm2 PDF

    motherboard intel schematics diagram

    Abstract: 440BX 443ZX INTEL application notes INTEL MOTHERBOARD SCHEMATICS 440BX PCIset 443BX Intel 243735 440ZX-66 AGPset
    Text: Migrating from a 440ZX-66 AGPset to a 440BX AGPset in a Celeron Processor Design Application Note July 1999 Order Number: 273259-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original
    440ZX-66 440BX CK100 33MHz 100/66MHz 133/66MHz 82443ZX 82443BX motherboard intel schematics diagram 443ZX INTEL application notes INTEL MOTHERBOARD SCHEMATICS 440BX PCIset 443BX Intel 243735 AGPset PDF

    HD6433837D

    Abstract: HD6473837F HD6473837FI HD6433832SD HD6433835 HD6433836 HD6433837 HF751 HD6433837SE HD6473834F
    Text: H8/3834 Series H8/3837 HD6433837, HD6433837S, HD64473837 H8/3836 HD6433836, HD6433836S H8/3835 HD6433835, HD6433835S H8/3834 HD6433834, HD6433834S, HD6473834 H8/3833 HD6433833, HD6433833S H8/3832 HD6433832S Hardware Manual ADE-602-054D Rev. 5.0 9/24/97 Hitachi, Ltd.


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    H8/3834 H8/3837 HD6433837, HD6433837S, HD64473837 H8/3836 HD6433836, HD6433836S H8/3835 HD6433835, HD6433837D HD6473837F HD6473837FI HD6433832SD HD6433835 HD6433836 HD6433837 HF751 HD6433837SE HD6473834F PDF

    Untitled

    Abstract: No abstract text available
    Text: 16GB, 32GB x72, ECC, QR 240-Pin DDR3L LRDIMM Features 1.35V DDR3L SDRAM LRDIMM MT72KSZS2G72LZ – 16GB MT72KSZS4G72LZ – 32GB Features Figure 1: 240-Pin LRDIMM (MO-269 RC/C) • 240-pin, load-reduced dual in-line memory module (LRDIMM) • Memory buffer (MB)


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    240-Pin MT72KSZS2G72LZ MT72KSZS4G72LZ 240-pin, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef8410dd71 kszs72c2g PDF

    Untitled

    Abstract: No abstract text available
    Text: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp


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    AS4DDR232M64PBG 32Mx64 AS4DDR232M64PBG PDF

    Untitled

    Abstract: No abstract text available
    Text: 97SD3248 1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks Logic Diagram One Amplifier Memory FEATURES: DESCRIPTION: • 1.5 Giggabit ( 8-Meg X 48-Bit X 4-Banks) • RAD-PAK radiation-hardened against natural space radiation • Total Dose Hardness: >100 krad (Si), depending upon space mission


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    97SD3248 48-Bit MIL-PRF-38535 PDF

    WEDPNF8M722V-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPNF8M722V-XBX 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n Sector Architecture •One 16KByte, two 8KBytes, one 32KByte, and fifteen 64KBytes in byte mode Package: • 275 Plastic Ball Grid Array PBGA , 32mm x 25mm


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    WEDPNF8M722V-XBX 8Mx72 16KByte, 32KByte, 64KBytes WEDPNF8M722V-XBX 100MHz 100ns PDF

    DDR3 LRDIMM

    Abstract: MT72JSZS4G72LZ-1G9 MT72JSZS4G72LZ-1G9E2A7 DDR3 DIMM SPD LRDIMM LRDIMM TSE-200
    Text: 32GB x72, ECC, QR 240-Pin DDR3 LRDIMM Features DDR3 SDRAM LRDIMM MT72JSZS4G72LZ – 32GB Features Figure 1: 240-Pin LRDIMM (MO-269 RC/C) • 240-pin, load-reduced dual in-line memory module (LRDIMM) • Memory buffer (MB) isolates DRAM interface from card edge


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    240-Pin MT72JSZS4G72LZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 t08-368-3900 09005aef83b62686 DDR3 LRDIMM MT72JSZS4G72LZ-1G9 MT72JSZS4G72LZ-1G9E2A7 DDR3 DIMM SPD LRDIMM LRDIMM TSE-200 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of


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    WEDPN16M72V-XBX 16Mx72 128MByte 864-bit 100MHz, 125MHz 100MHz PDF

    AX12

    Abstract: No abstract text available
    Text: 97SD3232 1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks Logic Diagram One Amplifier Memory FEATURES: DESCRIPTION: • 1 Gigabit ( 8-Meg X 32-Bit X 4-Banks) • RAD-PAK radiation-hardened against natural space radiation • Total Dose Hardness: >100 krad (Si), depending upon space mission


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    97SD3232 32-Bit AX12 PDF

    97SD3240

    Abstract: AX12
    Text: 97SD3240 1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks Logic Diagram One Amplifier Memory FEATURES: DESCRIPTION: • 1.25 Gigabit ( 8-Meg X 40-Bit X 4-Banks) • RAD-PAK radiation-hardened against natural space radiation • Total Dose Hardness: >100 krad (Si), depending upon space mission


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    97SD3240 40-Bit 97SD3240 AX12 PDF

    W3E64M72S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply


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    W3E64M72S-XBX 64Mx72 333Mbs 512MByte W3E64M72S-ESB W3E64M72S-XBX PDF

    A 3760 0549

    Abstract: 0835 0771 4188 1107
    Text: MIL-C-39014/2 Pin DIP HOW TO O R D E R Military Type Designation: Styles CKR22, CKR23, CKR24 Dash Number Option MIL-C-39014/22 Appropriate Dash Number Part No. Example CKR22 BX K 104 R S tyle. Voltage-Temperature Limits _ Note 1 = Leads centered within ±.005*


    OCR Scan
    MIL-C-39014/2 CKR22, CKR23, CKR24 MIL-C-39014/22 CKR22 let0841 A 3760 0549 0835 0771 4188 1107 PDF

    3VF1

    Abstract: 82443ZX PMB 3330 PMB 8815 intel AF 82801
    Text: intei Intel 440ZX AGPset: 82443ZX Host Bridge/Controller Datasheet November 1998 Order Number: 290650-001 intei Inform ation in this docum ent is provided in connection w ith Intel products. No license, express o r im plied, by estoppel or otherwise, to a ny intellectual


    OCR Scan
    440ZX 82443ZX 82801AA 82801AB 3VF1 PMB 3330 PMB 8815 intel AF 82801 PDF