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    2SB1462

    Abstract: 2SD2216 SC-75
    Text: Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Complementary to 2SD2216 Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 0.8±0.1 1.6±0.15 Collector-emitter voltage Base open Emitter-base voltage (Collector open)


    Original     		PDF 2SB1462 2SD2216 SC-75 2SB1462 2SD2216 SC-75

    2SB1218A

    Abstract: 2SD1819A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05


    Original     		PDF 2002/95/EC) 2SB1218A 2SD1819A 2SB1218A 2SD1819A

    2SB1320A

    Abstract: 2SD1991A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es si tf


    Original     		PDF 2002/95/EC) 2SB1320A 2SD1991A 2SB1320A 2SD1991A

    2SB0642

    Abstract: 2SB642
    Text: Transistors 2SB0642 2SB642 Silicon PNP epitaxial planar type For low-power general amplification Unit: mm 2.5±0.1 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation


    Original     		PDF 2SB0642 2SB642) 2SB0642 2SB642

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10


    Original     		PDF 2002/95/EC) 2SB0709A 2SB709A) 2SD0601A 2SD601A) SC-59 2SB0709A 2SB709A 2SD0601A 2SD601A

    2SB0709A

    Abstract: 2SB709A XP04401 XP4401
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04401 (XP4401) Silicon PNP epitaxial planar type 0.2±0.05 5 0.12+0.05 –0.02 4 M Di ain sc te on na tin nc ue e/ d 6 Unit: mm (0.425) For general amplification 1 5˚ ue


    Original     		PDF 2002/95/EC) XP04401 XP4401) 2SB0709A 2SB709A XP04401 XP4401

    XN02401G

    Abstract: 2SB0709A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN02401G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features ■ Basic Part Number • 2SB0709A x 2 Parameter


    Original     		PDF 2002/95/EC) XN02401G 2SB0709A XN02401G 2SB0709A

    2SB0709A

    Abstract: 2SB709A XN02401 XN2401
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN02401 (XN2401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10 –0.05


    Original     		PDF 2002/95/EC) XN02401 XN2401) 2SB0709A 2SB709A XN02401 XN2401

    XN1401

    Abstract: 2SB0709A 2SB709A XN01401
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01401 (XN1401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10 –0.05


    Original     		PDF 2002/95/EC) XN01401 XN1401) XN1401 2SB0709A 2SB709A XN01401

    2SB1218G

    Abstract: 2SD1819G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD1819G • Features ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) 2SB1218G 2SD1819G 2SB1218G 2SD1819G

    2SB0709A

    Abstract: XN01401 XN01401G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01401G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features ■ Basic Part Number • 2SB0709A x 2 Parameter


    Original     		PDF 2002/95/EC) XN01401G 2SB0709A 2SB0709A XN01401 XN01401G

    2SB0709A

    Abstract: 2SB709A XN06401 XN6401
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06401 (XN6401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05


    Original     		PDF 2002/95/EC) XN06401 XN6401) 2SB0709A 2SB709A XN06401 XN6401

    XP02401

    Abstract: 2SB0709A 2SB709A XP2401
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP02401 (XP2401) Silicon PNP epitaxial planar type Unit: mm (0.425) For general amplification 0.20±0.05 4 M Di ain sc te on na tin nc ue e/ d 5 0.12+0.05 –0.02 1 5˚ ue


    Original     		PDF 2002/95/EC) XP02401 XP2401) XP02401 2SB0709A 2SB709A XP2401

    2SB0709A

    Abstract: XN04401G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04401G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification • Package ■ Features • Code Mini6-G3 • Pin Name ue pl d in


    Original     		PDF 2002/95/EC) XN04401G 2SB0709A XN04401G

    XN04401

    Abstract: 2SB0709A 2SB709A XN4401
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04401 (XN4401) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05


    Original     		PDF 2002/95/EC) XN04401 XN4401) XN04401 2SB0709A 2SB709A XN4401

    2SA999

    Abstract: Silicon PNP epitaxial cl 100 hie hre hfe
    Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SA999 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA999 is a silicon PNP epitaxial type transistor designed for low OUTLINE DRAWING ¿5.6M AX frequency voltage amplify application.


    OCR Scan     		PDF 2SA999 2SA999 100mA, -10mA) SC-43 270Hz X10-3 Silicon PNP epitaxial cl 100 hie hre hfe

    BC846A

    Abstract: BC846B BC847A BC847B BC847C BC848A BC848B BC848C
    Text: TRANSYS BC846A - BC848C ELECTRONICS NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR LIMITED Features Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications


    OCR Scan     		PDF BC846A BC848C BC856-BC858) OT-23, MIL-STD-202, BC847C BC846B BC848A BC847A BC847B BC848B BC848C

    BC560 equivalent

    Abstract: bc556 equivalent bc 147 equivalent bc560 BC557 equivalent bc557 b 011 bc560 noise figure bc546 equivalent bc 147 transistor BG558
    Text: BC556. . . BC560 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. These transistors are subdivided into three groups A, B and C according to their current gain. The types BC556 and BC557 are available in groups A and B, however, the types BG558,


    OCR Scan     		PDF BC556 BC560 BC556 BC557 BG558, BC559 BC560 BC546 BC560 equivalent bc556 equivalent bc 147 equivalent BC557 equivalent bc557 b 011 bc560 noise figure bc546 equivalent bc 147 transistor BG558

    2sc3052

    Abstract: MARKING HRA MARKING XL
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3052 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3052 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING designed for low frequency voltage amplify application.


    OCR Scan     		PDF 2SC3052 2SC3052 100mA, 270Hz MARKING HRA MARKING XL

    2sa1235

    Abstract: ha15090
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unlt mm Mitsubishi 2SA1235 is a super mini silicon PNP epitaxial type transistor designed for low frequency voltage amplify application.


    OCR Scan     		PDF 2SA1235 2SA1235 -100mA, -10mA) O-236 SC-59 270Hz ha15090

    BC559

    Abstract: BC557 hie hre hfe cl 100 hie hre hfe
    Text: BC556 THRU BC559 Small Signal Transistors PNP TO-92 FEATURES PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ These transistors are subdivided into three groups A, B and C according to their current gain. The type BC556 is avail­


    OCR Scan     		PDF BC556 BC559 BC557 BC558 BC559 BC546 BC549 BC556. BC557 hie hre hfe cl 100 hie hre hfe

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5213 FOR PRE-DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5213 is a resin sealed silicon NPN epitaxial type transistor. It designed with high voltage, high hFE an d high tr.


    OCR Scan     		PDF 2SC5213 2SC5213 2SA1948. 200MHz 150to800 500mW SC-62 270Hz

    2SA904A

    Abstract: 2SA904 cl 100 hie hre hfe
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SA904A FOR LOW FREQUENCY VOLTAGE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA904A is a silicon PNP epitaxial type high voltage transistor OUTLINE DRAWING Unitrmm ¿5.6MAX designed for low frequency voltage amplify application of small signal. Due to


    OCR Scan     		PDF 2SA904A 2SA904A -120V 150MHz 270Hz X10-3 2SA904 cl 100 hie hre hfe

    MEF250

    Abstract: 2sa1602 mg 2SA1602
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1602 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1602 is a super mini package resin sealed silicon PNP epitaxial Unit:mm OUTLINE DRAWING 2 .1± 0.2 type transistor. It is designed for low frequency voltage amplify application.


    OCR Scan     		PDF 2SA1602 2SA1602 2SC4154. SC-59 2SA1235. -100mA -10mA) 270HZ 270Hz X10-3 MEF250 2sa1602 mg