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    CL 100 TRANSISTOR Search Results

    CL 100 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CL 100 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IBMN325164CT3

    Abstract: IBMN325404CT3 IBMN325804CT3
    Text: . IBMN325164CT3 IBMN325804CT3 IBMN325404CT3 256Mb Synchronous DRAM - Die Revision B Preliminary Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


    Original     		PDF IBMN325164CT3 IBMN325804CT3 IBMN325404CT3 256Mb -75H3 -75D3 06K0608 F39375A IBMN325404CT3 IBMN325804CT3

    IBMN312404CT3

    Abstract: IBMN312804CT3
    Text: . IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb Synchronous DRAM - Die Revision B Preliminary Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


    Original     		PDF IBMN312164CT3 IBMN312804CT3 IBMN312404CT3 128Mb -75H3 -75D3 06K7582 H03335A IBMN312404CT3 IBMN312804CT3

    IBM0312404

    Abstract: IBM03124B4 IBM0312804
    Text: . IBM0312164 IBM0312804 IBM0312404 IBM03124B4 128Mb Synchronous DRAM - Die Revision B Advance 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


    Original     		PDF IBM0312164 IBM0312804 IBM0312404 IBM03124B4 128Mb -75H3 -75D3 06K7582 H03335. IBM03124B4 IBM0312804

    IBM03254K4

    Abstract: IBM0325164 IBM DATE CODE
    Text: . IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb Synchronous DRAM - Die Revision B Advance Rev 0.1 Features • High Performance: -75H3 -75D3 -75A, -260, -360, -10, Units CL=2 CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 133 133 100 100 100 MHz tCK Clock Cycle


    Original     		PDF IBM0325164 IBM0325804 IBM0325404 IBM03254K4 256Mb -75H3 -75D3 06K0608 F39375. IBM03254K4 IBM DATE CODE

    IBM0364404CT3C360

    Abstract: IBM0364404CT3C10
    Text: . IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, -10, Units CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 150 133 100 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 10 ns tAC Clock Access Time1


    Original     		PDF IBM0364804 IBM0364164 IBM0364404 IBM03644B4 A12/A13 19L3265 E35856B IBM0364404CT3C360 IBM0364404CT3C10

    IBM0364804CT3C-360

    Abstract: IBM0364404CT3C-10 IBM0364164CT3C360 IBM0364164 IBMN364804 ibm dram
    Text: . IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, -10, Units CL=3 CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 150 133 100 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 10 ns tAC Clock Access Time1


    Original     		PDF IBM0364804 IBM0364164 IBM0364404 IBM03644B4 A12/A13 19L3265 E35856B IBM0364804CT3C-360 IBM0364404CT3C-10 IBM0364164CT3C360 IBMN364804 ibm dram

    IBM03254B4CT3A-75A

    Abstract: No abstract text available
    Text: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1


    Original     		PDF IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb IBM03254B4CT3A-75A

    transistor cay

    Abstract: No abstract text available
    Text: . IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A EC Update -10 Features • High Performance: -75A -260, -360, -10, Units CL=3 CL=2 CL=3 CL=3 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns tAC Clock Access Time1


    Original     		PDF IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb transistor cay

    IBMN364164

    Abstract: IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360
    Text: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • Programmable Wrap: Sequential or Interleave • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle


    Original     		PDF IBMN364164 IBMN364804 IBMN364404 19L3265 E35856B IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364164CT3C-360

    IBMN364804

    Abstract: IBMN364164 IBMN364164CT3C-68 IBMN364404 IBMN364804CT3C260 IBMN364804CT3C360
    Text: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 ns tAC Clock Access Time1 6 —


    Original     		PDF IBMN364164 IBMN364804 IBMN364404 A12/A13 19L3265 E35856B IBMN364804 IBMN364164CT3C-68 IBMN364404 IBMN364804CT3C260 IBMN364804CT3C360

    IBMN364804

    Abstract: No abstract text available
    Text: . IBMN364164 IBMN364804 IBMN364404 64Mb Synchronous DRAM - Die Revision C Features • High Performance: -68 -75A, -260, -360, Units CL=3 CL=3 CL=2 CL=3 fCK Clock Frequency 150 133 100 100 MHz tCK Clock Cycle 6.67 7.5 10 10 ns tAC Clock Access Time1 6 —


    Original     		PDF IBMN364164 IBMN364804 IBMN364404 A12/A13 19L3265 E35856B

    ibm0312804ct3a-260

    Abstract: IBM0312804CT3A360 IBM0312404 IBM03124B4 IBM0312804 IBM0312404CT3A IBM0312804CT3A-75A ibm dram IBM0312804CT3A-360
    Text: . IBM0312804 IBM0312164 IBM0312404 IBM03124B4 128Mb Synchronous DRAM - Die Revision A Features • High Performance: -75A, CL=3 -260, CL=2 fCK Clock Frequency 133 100 100 100 MHz tCK Clock Cycle 7.5 10 10 10 ns Time1 — — — 7 ns tAC Clock Access Time2


    Original     		PDF IBM0312804 IBM0312164 IBM0312404 IBM03124B4 128Mb ibm0312804ct3a-260 IBM0312804CT3A360 IBM03124B4 IBM0312404CT3A IBM0312804CT3A-75A ibm dram IBM0312804CT3A-360

    QVE00118

    Abstract: No abstract text available
    Text: QVE00118 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS .551 14.00 + D E + CL .236 (6.00) .020 (.50) .197 (5.00) CL CL OPTICAL C.L. .100 (2.50) .394 (10.00) .295 (7.50) (2X) FEATURES SCHEMATIC • No contact switching .197 (5.00) MIN (4X)


    Original     		PDF QVE00118 00003A QVE00118

    OPTICAL INTERRUPTER

    Abstract: No abstract text available
    Text: QVE00118 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS .551 14.00 + D E + CL .236 (6.00) .020 (.50) .197 (5.00) CL CL OPTICAL C.L. .100 (2.50) .394 (10.00) .295 (7.50) (2X) FEATURES SCHEMATIC • No contact switching .197 (5.00) MIN (4X)


    Original     		PDF QVE00118 00003A OPTICAL INTERRUPTER

    nt5sv32m8at-75b

    Abstract: NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT DRAMs
    Text: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb Synchronous DRAM Features • • • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz


    Original     		PDF NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT NT5SV64M4AW NT5SV32M8AW NT5SV16M16AW 256Mb nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT DRAMs

    2X transistor

    Abstract: 2x l transistor Transmissive Optical Sensor 3 pin transistor 2x QVE00120
    Text: Transmissive Opto Sensors Slotted Switch Logic 5 mm OPTOLOGIC – High Resolution .551 (14.00) + D E + CL .236 (6.00) .020 (.50) .197 (5.00) CL CL OPTICAL C.L. .100 (2.50) .394 (10.00) (2X) .295 (7.50) .197 (5.00) MIN (4X) .027 (.70) (2X) .260 (6.60) .092 (2.35)


    Original     		PDF QVE00120 2X transistor 2x l transistor Transmissive Optical Sensor 3 pin transistor 2x QVE00120

    NT5SV32M4CT-75B

    Abstract: NT5SV16M8CT NT5SV32M4CT NT5SV8M16CT
    Text: NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT 128Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time1 — — — ns tAC Clock Access Time2 5.4


    Original     		PDF NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT 128Mb NT5SV32M4CT-75B NT5SV16M8CT NT5SV32M4CT NT5SV8M16CT

    NT5SV16M8CT

    Abstract: No abstract text available
    Text: NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT 128Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time1 — — — ns tAC Clock Access Time2 5.4


    Original     		PDF NT5SV32M4CT NT5SV16M8CT NT5SV8M16CT 128Mb NT5SV16M8CT

    Untitled

    Abstract: No abstract text available
    Text: NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns tAC Clock Access Time 1 — — — ns tAC Clock Access Time 2


    Original     		PDF NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb

    BL460

    Abstract: 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT
    Text: NT5SV64M4AT L NT5SV32M8AT(L) NT5SV16M16AT(L) 256Mb Synchronous DRAM Features • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns —


    Original     		PDF NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb BL460 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b

    transistor cl100

    Abstract: cdil CK100 CK100 CL100 CL100 pin configuration CK-100 CL100 transistor npn silicon ck100
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS CL 100, A, B CK 100, A, B TO-39 Metal Can Package CL100 And CK 100 Are Medium Power Transistors Suitable For Awide Range


    Original     		PDF CL100 CK100, C-120 Rev190701 transistor cl100 cdil CK100 CK100 CL100 pin configuration CK-100 CL100 transistor npn silicon ck100

    IBM0316809C

    Abstract: ibm T22 IBM0316169C cmos dram T20 96 diode
    Text: . IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8


    Original     		PDF IBM0316169C IBM0316409C IBM0316809C cycles/64ms IBM0316809C ibm T22 cmos dram T20 96 diode

    IBM0316169C

    Abstract: IBM0316809C ibm t20
    Text: . IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Preliminary Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8


    Original     		PDF IBM0316409C IBM0316809C IBM0316169C cycles/64ms SA14-4711-03 IBM0316169C IBM0316809C ibm t20

    Untitled

    Abstract: No abstract text available
    Text: IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Features • High Performance: fcK Clock Frequency • Multiple Burst Read with Single W rite Option -10 CL-3 -12 CL-3 Units ! • Automatic and Controlled Precharge Command 100 83 MHz ! • Data Mask for Read/Write control x4,x8


    OCR Scan     		PDF IBM0316409C IBM0316809C IBM0316169C cycles/64ms