CLV032 Search Results

Am27C020

Contextual Info: a Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to

AMD 27C040

Abstract: 27c040
Contextual Info: Advanced Micro Devices Am27C040 4 Megabit 524,288 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Typical programm ing tim e of 1 minute — 100 ns ■ Latch-up protected to 100 mA from -1 V to ■ Low power consumption

Contextual Info: PRE LIM INARY Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)

Contextual Info: Am27C64 Advanced Micro Devices 64 Kilobit 8,192 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time — 45 ns ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to — 20 nA typical CMOS standby current ■ JEDEC-approved pinout

Am27C64

Contextual Info: Advanced Micro Devices Am27C64 8,192 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time-55 ns JEDEC-approved pinout ■ Low power consumption: -100 nA maximum standby current ±10% power supply tolerance ■ Programming voltage: 12.75 V ■

Am27C512s

Abstract: AM27C512-155
Contextual Info: ; ADV MICRO MEMORY 33E Q25752Ô DG2 Öö i a D T IAM3>4 - T - H b - 1 3 -2 9 Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • • • Fast access time — 70 ns Low power consumption: - 100 /¿A maximum standby current

Zl11

Abstract: A12C
Contextual Info: ADV MI CRO MEMORY 4ÔE » 0E5755Ö GÜ3 D4 b ö ö • AÎ1DM T—46—13-29 Advanced Micro Devices Am27C020 2 Megabit (262,144 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ 100% Flashrlte programming -typical programming time of 30 seconds Fast access time

Contextual Info: Am27C64 8,192 X 8-Bit CMOS EPROM > 3 DISTINCTIVE CHARACTERISTICS • • • • • • • Fast a ccess lim e — 55 ns Low pow er consum ption: - 100 juA maxim um standby current Program m ing voltage: 12.5 V Single + 5 -V pow er supply • M -J JED EC-approved pinout

AM27C256-205

Abstract: Am27C258 27C256-250 Am27c256-155 AM27C256DC AM27C256 AMD 27C256 255
Contextual Info: Am27C256 32,768 X Advanced Micro Devices 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time — 55 ns Low power consumption: - 100 maximum standby current Programming voltage: 12.5 V Single +5-V power supply • • • • JEDEC-approved pinout

am27c128

Contextual Info: a Advanced Micro Devices Am27C128 128 Kilobit 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to Vcc +1 V • Fast access time — 45 ns High noise immunity ■ Low power consumption — 20 nA typical CMOS standby current

AM27C512

Abstract: AM27C512-90DC 127C512
Contextual Info: ADV MICRO MEMORY b*4E D • 025752Ö 0D31c14b 3 0 e! ■ AMDM a Advanced Micro Devices Am27C512 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc + 1 V — 70 ns ■ High noise immunity

Contextual Info: ADV MICRO M E M O R Y b4E J> D2S7S2Ô m 0031^21 T3T Advanced Micro Devices Am27C128 128 Kilobit (16,384 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to Vcc +1 V • Fast access time — 45 ns High noise immunity

EPROM AM27256

Abstract: EPROM 27256 DC amd Am27128A Am27128A EPROM
Contextual Info: ADV I MICRO A m 2 7 6 4 A , A m A m 2 7 5 1 2 8 -B it E P R O M {MEMORY} 2 7 1 2 8 A , A m Tb D E B DES7S2fi DOSbbSS 2 7 2 5 6 F a m ily 7 % * /3 - 7 ? DATA S H E E T A M E N D M E N T In c re a s e d l-_ fo r th e A m 2 7 5 1 2 D C Characteristics table, page 8

Contextual Info: a PRELIM INARY Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V -3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)

AMD am2 socket pinout

Abstract: 2575S5 amd AM2 pinout AMD socket AM2 pinout v020 pinout AM2 AMD AM27LV020
Contextual Info: PRELIM IN ARY Advanced Micro Devices Am27LV020/Am27LV020B 2 Megabit 262,144 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS 100% Flashrite programming — Typical programming time of 32 seconds • Single 3.3 V power supply — Regulated power supply 3.0 V -3 .6 V

AM27LV010

Contextual Info: PRELIM INARY & Advanced Micro Devices Am27LV010/Am27LV010B 1 Megabit 131,072 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply Fast Flashrlte programming — Typical programming time of 16 seconds — Regulated power supply 3.0 V -3.6 V

D2575

Abstract: AM27C256 AM27C256-55 AM27C256-70
Contextual Info: AD V MICRO MEMORY t4E » • D257S2Ô G03n33 7SO CI Advanced Micro Devices Am27C256 256 Kilobit (32,768 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access time Latch-up protected to 100 m A from -1 V to Vcc + 1 V — 55 ns ■ Low power consumption

AM27C128

Abstract: zi11
Contextual Info: ADV MI C RO MEMORY 4 ÔE D 055752Û 003G327 1 «AMD4 T -4 6 -1 3-29 & Advanced Micro Devices Am27C128 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tlme-55 ns JEDEC-approved pinout ■ Low power consumption: -1 0 0 pA maximum standby current

am27h10

Contextual Info: ADV MIC RO M E MO RY MfiE D • Ü25752Ô □ D 3 0 l)13 5 ■ A M D 1» T-46-13-29 A m 2 7 H 0 1 0 Advanced 1 Megabit (131,072 x 8-Bit) High Speed CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Industry's fastest -45ns 1 megabit CMOS EPROM ■ Versions available in industrial and military

27C010-10

Contextual Info: FINAL a Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to • Fast access time Vcc +1 V — 90 ns High noise immunity ■ Low power consumption — 20 nA typical CMOS standby current

Contextual Info: a PRELIMINARY Advanced Micro Devices Am27LV020/Am27LV020B 2 Megabit 262,144 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single 3.3 V power supply — Regulated power supply 3.0 V - 3.6 V — Unregulated power supply 2.7 V -3 .6 V (battery-operated systems)

Am27CQ40

Abstract: Am27C040
Contextual Info: ADV MICRO MEMORY DSS7S2Ö aoa'ibis 3ÖE D T = 4 fe -1 3 -2 9 Am27C040 1 mamdm CI Advanced Micro Devices 4 Megabit (524,288 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time - 90 ns Low power consumption - 20 nA typical CMOS standby current

Contextual Info: Advanced Micro Devices Am27C64 64 Kilobit 8,192 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity ■ Fast access time — 45 ns ■ Low power consumption ■ Versatile features for simple Interfacing

am27C512 eprom

Abstract: AM27C512-200 AM27C512-25O/BXA
Contextual Info: Advanced Micro Devices A m 2 7 C 5 1 2 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to ■ Fast access time V cc + 1 V — 70 ns ■ High noise Immunity ■ Low power consumption ■ Versatile features for simple interfacing