CM800 Search Results

CM800HC-66H

Abstract: r 1241 transistor
Contextual Info: MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HC-66H ● IC . 800A ● VCES . 3300V

MT 2800 N

Abstract: D 1062 transistor CM800HG-90R
Contextual Info: Prepared by S. Iura Approved by H. Yamaguchi : Jul. 2010 MITSUBISHI HVIGBT MODULES Revision: 1.0 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HG-90R ● IC ………………………

D 1062 transistor

Abstract: HVM-1062
Contextual Info: CONFIDENTIAL MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Jul. 2010 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY

Contextual Info: CM800DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD S-Series Module 800 Amperes/1200 Volts A B F E G H J D E M G2 K X X X LABEL N G1 Q P C1 R E1 F E2 B C2E1 E2 N W V NUTS (4 PLACES) L T (4 PLACES)

CM800DZ-34H

Contextual Info: MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZ-34H ● IC . 800A ● VCES . 1700V

CM800HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-50H ● IC . 800A ● VCES . 2500V

hvigbt diode

Abstract: Converter for Induction Heating CM800HB-66H M6 transistor
Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-66H ● IC . 800A ● VCES . 3300V

CM800HA-24H

Contextual Info: CM800HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Single IGBTMOD H-Series Module 800 Amperes/1200 Volts A B U - M4 THD (2 TYP.) R K P E M G B A S - M8 THD (2 TYP.) C E Q J C Description: Powerex IGBTMOD™ Modules

CM800HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-50H ● IC . 800A ● VCES . 2500V

CM800E2C-66H

Contextual Info: MITSUBISHI HVIGBT MODULES CM800E2C-66H SWITCHING ENERGY J/P td(off) 100 7 5 td(on) tr 3 2 10–1 7 5 REVERSE RECOVERY TIME trr (µs) 3 2 tf VCC = 1650V, VGE = ±15V RG = 2.5Ω, Tj = 125°C Inductive load 5 7 102 5 7 103 2 3 2 3 5 Irr 101 7 5 103 7 5 3 2

Z13A

Abstract: GT-CM800L
Contextual Info: UNCONTROLLED DOCUMENT REV, A B C PART NUMBER REV. GT-CM800L c E.C.N. NUMBER AND REVISION COMMENTS UPDATED WHERE SPECIFIED E.C.N. # 1 OBRDR & REDRAWN E.C.N. # 1 1 1 4 8 . DATE a - 1 3 -9 3 3 -2 7 -0 0 12.12.06 ELECTRICAL SPECIFICATIONS £5.00 [0.984] CO.3 0 7 ]

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-66H ● IC . 800A ● VCES . 3300V

SGCT

Abstract: mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT
Contextual Info: News of Importance to Power Semiconductor Users www.pwrx.com SPRING 2002 Powerex Expands HVIGBT Line U P C O M I N G TRADE SHOWS A N D CONFERENCES HVIGBT LINE-UP Ic: A Vce(V) 50 75 100 150 200 300 400 600 800 900 1200 1600 1800 CM800HA34H CM1200HA- CM1600HC- CM1800HC34H

CM800HB-66H

Contextual Info: MITSUBISHI HVIGBT MODULES ARY LIMIN . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som CM800HB-66H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE

CM800HA-34H

Abstract: transistor su 312
Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM800HA-34H PRE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE

CM800DZ-34H

Abstract: mitsubishi CM800DZ-34H
Contextual Info: MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZ-34H ● IC . 800A ● VCES . 1700V

Contextual Info: < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 7 9 0 A* Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HA-50H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAW ING & CIRCUIT DIAGRAM

CM800HA-24H

Abstract: PC4800
Contextual Info: MITSUBISHI IGBT MODULES CM800HA-24H HIGH POWER SWITCHING USE INSULATED TYPE A B U - M4 THD 2 TYP. R K P E M G B A S - M8 THD (2 TYP.) C E Q J C Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one

CM800HA-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HA-50H ● IC . 800A ● VCES . 2500V

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-50H H°'Spa'# # c so^ HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules APPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

CM800HB-66H

Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM800HB-66H 大電力スイッチング用 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール 絶縁形 CM800HB-66H ¡IC ……………………………………………… 800A

Contextual Info: < HVIGBT MODULES > CM800HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM800HC-90R       IC •···············································································800A

Contextual Info: MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800E6C-66H ● IC . 800A ● VCES . 3300V