CMOS AOI Search Results

CMOS AOI Result Highlights (5)

Part	Manufacturer	Description
TC74HC14AF	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Inverter, SOP14
74VHCT541AFT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Octal Buffer, TSSOP20B
74HC14D	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Inverter, SOIC14
74VHC541FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Octal Buffer, TSSOP20B
74HC04D	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, Inverter, SOIC14

CMOS AOI Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
3 input or gates TTL Abstract: cmos XOR Gates Nand gate Crystal Oscillator 4-input nand gates ttl XOR GATES "resistor set oscillator" dip TTL XOR Gates 5D208 cmos XOR schmitt trigger toggle nand Text: HT3A CMOS Low Cost Gate Array General Features • • • • • • • • 5µm LOVAG CMOS technology Operating voltage: 2.0V~4.8V Input/Output CMOS compatible High noise immunity Six array bases cover the range from 212~890 gates Enhanced reliability	Original	HTA3000 HT3A000 HT3A100 HT3A200 HT3A300 HT3A400 3 input or gates TTL cmos XOR Gates Nand gate Crystal Oscillator 4-input nand gates ttl XOR GATES "resistor set oscillator" dip TTL XOR Gates 5D208 cmos XOR schmitt trigger toggle nand	PDF
80C24 Abstract: 10MHZ 80C03 80C04 EPE6047S PT4152 Text: 80C24 80C24 Technology Incorporated AutoDUPLEXTM CMOS Ethernet Interface Adapter PRELIMINARY DATA SHEET December 10, 1996 Functional Features Note: Check for latest Data Sheet revision before starting any designs. • Low Power CMOS Technology Ethernet Serial	Original	80C24 10Base-T x3051. 10Base-5, 10Base-2, 80C24 004inches. MD400119/J 10MHZ 80C03 80C04 EPE6047S PT4152	PDF
PT4152 Abstract: EPE6047S 23Z435 80C25 80C26 A553-1084-01 T55 transformer Text: Full Duplex 80C26 80C26 CMOS Ethernet Interface Adapter in 28L Package 96346 Functional Features Note: Check for latest Data Sheet revision before starting any designs. • Low Power CMOS Technology Ethernet Serial Interface Adapter with Integrated Manchester	Original	80C26 10Base-T 10Base-5, 10Base-2, 80C25 MD400143/D PT4152 EPE6047S 23Z435 80C26 A553-1084-01 T55 transformer	PDF
mcm2018a Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information	OCR Scan	A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D	PDF
sun hold RAS 0610 Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000 Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information	OCR Scan	A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000	PDF
5Bp smd transistor data Abstract: 5Bp smd TRANSISTOR SMD 2X y CK 158 SMD WL18 TRANSISTOR SMD 2X K 100CLCC cmos based on tanner tools operation of sr latch using nor gates TRANSISTOR SMD 2X 7 Text: Order this data sheet by HDCM IL/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Military HDC Series HDC Series CMOS Arrays High Performance Triple Layer Metal 1.0 Micron CMOS Arrays Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a	OCR Scan		PDF
KM684000ALG-7L Abstract: KM684000ALT-5L km684000alg KM684000ALP-5L 32SOP KM684000ALP-5 KM684000ALP-7 KM684000ALP-7L Text: KM684000A Family CMOS SRAM 512K x8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm CMOS • Organization: 512Kx8 • Power Supply Voltage: Single 5V±10% • Low Data Retention Voltage: 2V Min » Three state output and TTL Compatible	OCR Scan	KM684000A 512Kx8 32-DIP-600 32-SOP-525, 32-TSQP2-400F/R KM684Q00A KM684000ALG-7L KM684000ALT-5L km684000alg KM684000ALP-5L 32SOP KM684000ALP-5 KM684000ALP-7 KM684000ALP-7L	PDF
MCR 22-8 transistor power Abstract: Transistor motorola 418 10146 1987 carrier A022H on 5295 equivalents HDC031 Mustang 300 HDC011 HDC016 HDC049 Text: Order this data sheet by HDC/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH PERFORMANCE TRIPLE LAYER METAL HDC SERIES CMOS ARRAYS 1.0 MICRON CMOS ARRAYS Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a significant advancement in microchip technology.	OCR Scan		PDF
CAT28LV65 Abstract: No abstract text available Text: Preliminary CAT28LV65 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation: - Active: 8 mA Max.	OCR Scan	CAT28LV65 64K-Bit 250/300/350ns CAT28LV65 28LV65 28LV65I	PDF
Untitled Abstract: No abstract text available Text: Military CMOS Programmable Gate Array Logic Cell Array M 2 0 6 4 /M 2 0 1 8 Conforms to MIL-STD-883, Class B* Ordering Information Benefits Features CMOS • Low power • TTL or CMOS Input threshold levels PROGRAMABLE • Programmable Logic unctions • Programmable I/O blocks	OCR Scan	MIL-STD-883, M2018 M2064 M2018 A0-A15	PDF
HV6264A Abstract: hy6264a A12CE I0530 Text: HY6264A Series ••H Y U N D A I 8K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	HY6264A HV6264A 70/85/100/120ns 1DB01-11-MAY95 330mil 048W2 1DB01 A12CE I0530	PDF
KM41C4000C Abstract: No abstract text available Text: KM41C4000C, KM41V4000C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access	OCR Scan	KM41C4000C, KM41V4000C 1024cycles KM41C4000C	PDF
KM44C4100A Abstract: KM44C4000a KM44V4100A Text: KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh	OCR Scan	KM44C4000A, KM44C4100A KM44V4000A, KM44V4100A KM44C4000a KM44V4100A	PDF
74LS382 Abstract: C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381 Text: ix u jD U Lu ra n ctiu F U JIT S U _ mmm CWiOS Gate Array GENERAL INFORMATION The Fujitsu CMOS gate array family consists of twentyeight devlcs types which are fabricated with advanced silicon gate CMOS technology. And more than 14devlc«s are coming. Fujitsu CMOS gate array are configured In a	OCR Scan	veF178 74LS181 74LS190 F191H 74LS191 74LS192 74LS193 74LS194A 74LS195A 74S260 74LS382 C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381	PDF

IDT7M135 Abstract: IDT7M134S IDT7M145 Text: Integrated Device Technology, Inc. 8K x 8 16K x 8 CMOS CMOS DUAL-PORT STATIC RAM MODULE MASTER FEATURES: • • • • • • • • • ■ • High-density 64K/128K CMOS Dual-Port RAM modules 16K x 8 (IDT7M135) or 8K x 8 (IDT7M134)option Fully asynchronous read/write operation from either port	OCR Scan	IDT7M134S IDT7M135S 64K/128K IDT7M135) IDT7M134 134/ID RL10L LW10R IDT7M135 IDT7M145	PDF
v1000ct Abstract: KM44V1000C Text: KM44C1OOOC, KM44V1000C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access	OCR Scan	KM44C1OOOC, KM44V1000C 1024cycles v1000ct KM44V1000C	PDF
Untitled Abstract: No abstract text available Text: -P R E L IM IN A R Y October 1995 Edition 1.1 = FUJITSU PRODUCT PROFILE SHEET MB 8 116165 A- 60/-70 CMOS 1M X 16BIT HYPER PAGE M O D E DYNAMIC RAM CMOS 1,048,576 x 16BIT Hyper Page Mode Dynamic RAM The Fujitsu MB8116165A is a fully decoded CMOS Dynamic RAM DRAM that contains	OCR Scan	16BIT MB8116165A 16-bit 256-bits MB8116165A-60 MB8116165A-70 50-LEAD	PDF
Untitled Abstract: No abstract text available Text: KM44C1005C CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power	OCR Scan	KM44C1005C	PDF
rb414 Abstract: KM44C1003 Text: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power	OCR Scan	KM44C HHHHHHI-INMHHM01 KM44C1003DT rb414 KM44C1003	PDF
Untitled Abstract: No abstract text available Text: -.¿ J D S 0 5 -1 0 1 4 4 -5 E MEMORY CMOS 1 M x 4 BIT FAST PAGE MODE DRAM MB814400A-60/-70/-80 CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB814400A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 4,194,304	OCR Scan	MB814400A-60/-70/-80 MB814400A 024-bits MB814400A MB814400A-60/M B814400A-70/MB814400A-80 FPT-26P-M02) F26002S-3C-3	PDF
Untitled Abstract: No abstract text available Text: Whaì H E W L E T T mLHM PA C K A R D High Speed CMOS Optocoupler Technical Data HCPL-7100 HCPL-7101 F eatures • CMOS IC Technology • C om patibility w ith All +5 V CMOS and TTL Logic Fam ilies • No E xternal Com ponents Required for Logic Interface	OCR Scan	HCPL-7100 HCPL-7101 HCPL-7100) HCPL-7101) HCPL-7100/7101 L-7100 PL-7101)	PDF
Untitled Abstract: No abstract text available Text: MEMORY CMOS 4 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB8116400B-50/-60 CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8116400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB8116400B features a “fast page” mode of operation whereby high	OCR Scan	MB8116400B-50/-60 MB8116400B MB8116400B C26059S-3C-1 26-pin FPT-26P-M05) F26005S-2C-1	PDF
Untitled Abstract: No abstract text available Text: 80C24 AutoDUPLEXrM CMOS Ethernet Interface Adapter Technology, Incorporated March 1994 ADVANCED DATA SHEET Functional Features General Description • Low Power CMOS Technology Ethernet Serial Interface Adapter with Integrated Manchester Code Converter MCC , AUland 10Baae-T	OCR Scan	80C24 10Baae-T 10Base-5, 10Base-2, 10Base-T 80C24 MD400119/E	PDF
Untitled Abstract: No abstract text available Text: INTERNATIONAL CMOS TECHNOLOGY, INC. Preliminary Data March 1989 TM Features Advanced CMOS EEPROM Technology High Performance, Low Power Consumption — tPD = 20ns, fmax= 37MHz — Icc = 55mA + 0.5mA/MHz EE Reprogrammability — Low risk reprogrammable inventory	OCR Scan	37MHz 12-configuration	PDF

CMOS AOI Search Results

CMOS AOI Result Highlights (5)

CMOS AOI Datasheets Context Search

3 input or gates TTL

80C24

PT4152

mcm2018a

sun hold RAS 0610

5Bp smd transistor data

KM684000ALG-7L

MCR 22-8 transistor power

CAT28LV65

Untitled

HV6264A

KM41C4000C

KM44C4100A

74LS382

IDT7M135

v1000ct

Untitled

Untitled

rb414

Untitled

Untitled

Untitled

Untitled

Untitled