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    1DB01 Price and Stock

    Murata Manufacturing Co Ltd GJM0335C1E5R1DB01D

    CAP CER 5.1PF 25V C0G/NP0 0201
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    DigiKey GJM0335C1E5R1DB01D Digi-Reel 6,941 1
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    GJM0335C1E5R1DB01D Cut Tape 6,941 1
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    GJM0335C1E5R1DB01D Reel 15,000
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    Mouser Electronics GJM0335C1E5R1DB01D 30,000
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    Avnet Asia GJM0335C1E5R1DB01D 8 Weeks 15,000
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    Murata Manufacturing Co Ltd GJM1555C1H5R1DB01D

    CAP CER 5.1PF 50V C0G/NP0 0402
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    DigiKey GJM1555C1H5R1DB01D Cut Tape 3,370 1
    • 1 $0.1
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    • 100 $0.0222
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    • 10000 $0.01056
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    GJM1555C1H5R1DB01D Digi-Reel 3,370 1
    • 1 $0.1
    • 10 $0.038
    • 100 $0.0222
    • 1000 $0.0139
    • 10000 $0.01056
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    Mouser Electronics GJM1555C1H5R1DB01D 33,169
    • 1 $0.1
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    • 100 $0.016
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    Avnet Abacus GJM1555C1H5R1DB01D Reel 15 Weeks 10,000
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    Murata Manufacturing Co Ltd GCQ1555C1H1R1DB01J

    CAP CER 1.1PF 50V C0G 0402
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    DigiKey GCQ1555C1H1R1DB01J Reel 50,000
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    Avnet Americas GCQ1555C1H1R1DB01J Reel 14 Weeks 50,000
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    Murata Manufacturing Co Ltd GJM0335C1H5R1DB01J

    CAP CER MLCC
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    DigiKey GJM0335C1H5R1DB01J Reel 50,000
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    Avnet Americas GJM0335C1H5R1DB01J Reel 14 Weeks 50,000
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    Murata Manufacturing Co Ltd GCQ1555C1H2R1DB01J

    CAP CER 2.1PF 50V C0G 0402
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    DigiKey GCQ1555C1H2R1DB01J Reel 50,000
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    Avnet Americas GCQ1555C1H2R1DB01J Reel 14 Weeks 50,000
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    1DB01 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: R75PF2180CK30J 75PF2180CK30J Capacitor, film, 0.018 uF, +/-5% Tol, -55/+105C, General Purpose, 630V@85C, Lead Spacing=10 mm L General Information T Manufacturer: Miscellaneous Electrical: H KEMET Not for new design. Use series F461-F464


    Original     		R75PF2180CK30J 75PF2180CK30J) F461-F464 250VAC 2000v/us 90000V 1db014e0-7bcc-4ed5-a61e-8dd3ba9573d2 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY6264A Series •HYUNDAI 8Kx 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CM O S static RAM fabricated using Hyundai’s high performance twin tub CM O S process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		HY6264A speed-70/85/100/120ns 1DB01-11-MAY94 HY6264AP HY6264ALP PDF

    LD33

    Abstract: ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70
    Text: HY6264A Series ‘H YU N D AI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using Hyundai's high performance twin tub C M O S process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		HY6264A 70/85/100/120ns 330mil 1270J 1DB01-11-MAY95 HY6264AP LD33 ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY6264A-I Series •HYUNDAI 8K X 8-bit CMOS SRAM DESCRIPTION The HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		HY6264A-I forAY95 330mll, HY6264ALLP-I HY6264ALJ-I PDF

    HV6264A

    Abstract: hy6264a A12CE I0530
    Text: HY6264A Series ••H Y U N D A I 8K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		HY6264A HV6264A 70/85/100/120ns 1DB01-11-MAY95 330mil 048W2 1DB01 A12CE I0530 PDF

    3l08

    Abstract: hy538
    Text: •HYUNDAI / H Y 6 3 8 1 128KX 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techni­


    OCR Scan     		128KX HY638100 15/17/20/25ns 1DB01-11-MAY94 HY53B10D 1DQG1-11-MAY94 HY5381D0J HY53A1DDU 3l08 hy538 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY6264A Series ‘HYUNDAI 8K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		HY6264A 70/85/100/120ns 330mil 1DB01-11-MAY95 HY6264AP HY6264ALP PDF

    NCC 5551

    Abstract: SS LSE 0530 HY6264AL ZT 5551 y626
    Text: HY6264A-I Series •HYUNDAI 8K X CMOS SRAM 8 -b it DESCRIPTION The H Y 6 26 4A -I is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using H yundai's high performance twin tub C M O S pro cess technology. This high reliability pro cess coupled with innovative circuit


    OCR Scan     		HY6264A-I 1DB02-11-M 0000BSC 330mil 878ft 1DB02-11-MAY9S HY6264ALP-I HY6264ALLP-I NCC 5551 SS LSE 0530 HY6264AL ZT 5551 y626 PDF

    HY5264A

    Abstract: bd111 MCA-12 HY5254A
    Text: HY5264A Series -HYUNDAI BK X 8-blt CMOS SRAM DESCHI FTIDN ThB HYB2B4A is a high-speed, low power and B,192 » B-bils CMDS static HAM labricatBd using Hyundai's high perform ance tw in tub CMDS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		HY5264A HYS254Ahas HY5254A DO/120ns 01-11-M Q141D 50fll 1DBD1-11-MAYM bd111 MCA-12 PDF

    hy6264

    Abstract: No abstract text available
    Text: HY6264A-I Series •{HYUNDAI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A-I is a high-speed, low power and 8,192 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		HY6264A-I 1DB02-11-MAY95 100IP9C) OS3003 330mil 4b750flfl hy6264 PDF