Contextual Info: HY5381DDA •HYUNDAI 12BK X B-bit CM O S FAST SRAM A D V A N C ED INFO RM ATIO N DESCRIPTIO N The HY53S1D0A is a high-speed 131.D7ZX B-bits C M O S sialic RAM fabricated using Hyundai’s high performance twin tub C M O S process technology. This high reliability process coupled with high-speed circuit design tB c h n iquBs, yields maximum access time □ 15ns. The HY5301DOA has a data rBtBntion m ods that guarantees data to

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Abstract: hy538
Contextual Info: •HYUNDAI / H Y 6 3 8 1 128KX 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techni­

hy538

Contextual Info: 'HYUNDAI 32K M B-bit HY53B256 CMOS FAST 5 RAM PHELIM INARY DESCRIPTION The HY53S256 is a high-speed 3Z.75S x S-bils CMOS static RAM fabricated using Hyundai's high perform ance twin tub CMOS process technology. This high reliability prncBSs coupled with high-speed circuit design techni­