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    CMOS NAND2 Search Results

    CMOS NAND2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MG80C186XL-20/R Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy
    MD87C51-16/B Rochester Electronics LLC Microcontroller, CMOS Visit Rochester Electronics LLC Buy
    A80C286-12 Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy

    CMOS NAND2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    XH035 library

    Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3 PDF

    mos rm3 data

    Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		XA035 XA035 35-micron XH035 mos rm3 data MOS RM3 BSIM3V3 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials PDF

    MOS RM3

    Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		XA035 XA035 35-micron XH035 MOS RM3 mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials PDF

    CMOS Process Family

    Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library
    Text: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single


    Original     		XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell library PDF

    XH018

    Abstract: sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model
    Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six


    Original     		XH018 XH018 18-micron sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model PDF

    bsim3 0.18 micron parameters

    Abstract: bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos XH018 CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width
    Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six


    Original     		XH018 XH018 18-micron bsim3 0.18 micron parameters bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width PDF

    36168

    Abstract: No abstract text available
    Text: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS


    Original     		Bout12, BOUT12 36168 PDF

    MOS RM3

    Abstract: No abstract text available
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		XO035 XO035 35-micron MOS RM3 PDF

    CMOS

    Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
    Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate


    Original     		XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model PDF

    full subtractor circuit using decoder

    Abstract: full subtractor circuit using nor gates tdb 158 dp VHDL program 4-bit adder 8 bit carry select adder verilog codes full subtractor circuit using nand gate full adder circuit using nor gates full subtractor circuit using nand gates full subtractor circuit nand gates 0-99 counter by using 4 dual jk flip flop
    Text: CLA70000 Series High Density CMOS Gate Arrays DS2462 Recent advances in CMOS processing technology and improvements in design architecture have led to the development of a new generation of array-based ASIC products with vastly improved gate integration densities. This


    Original     		CLA70000 DS2462 full subtractor circuit using decoder full subtractor circuit using nor gates tdb 158 dp VHDL program 4-bit adder 8 bit carry select adder verilog codes full subtractor circuit using nand gate full adder circuit using nor gates full subtractor circuit using nand gates full subtractor circuit nand gates 0-99 counter by using 4 dual jk flip flop PDF

    MOS RM3

    Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well" PDF

    full adder circuit using nor gates

    Abstract: full subtractor circuit using nand gate full subtractor circuit using nor gates full subtractor circuit using decoder 8 bit carry select adder verilog codes half adder 74 full subtractor circuit nand gates 8 bit subtractor 3 bit carry select adder verilog codes full subtractor circuit using nand gates
    Text: CLA70000 Series High Density CMOS Gate Arrays DS2462 Recent advances in CMOS processing technology and improvements in design architecture have led to the development of a new generation of array-based ASIC products with vastly improved gate integration densities. This


    Original     		CLA70000 DS2462 full adder circuit using nor gates full subtractor circuit using nand gate full subtractor circuit using nor gates full subtractor circuit using decoder 8 bit carry select adder verilog codes half adder 74 full subtractor circuit nand gates 8 bit subtractor 3 bit carry select adder verilog codes full subtractor circuit using nand gates PDF

    full subtractor circuit nand gates

    Abstract: 8 bit carry select adder verilog codes PLESSEY CLA low power and area efficient carry select adder v 32 bit barrel shifter vhdl advantages of master slave jk flip flop half adder 74 full subtractor circuit using nand gate 0-99 counter by using 4 dual jk flip flop 3 bit carry select adder verilog codes
    Text: AUGUST 1992 2462 - 4.0 CLA70000 SERIES HIGH DENSITY CMOS GATE ARRAYS Supersedes March 1992 edition - version 3.1 Recent advances in CMOS processing technology and improvements in design architecture have led to the development of a new generation of array-based ASIC


    Original     		CLA70000 full subtractor circuit nand gates 8 bit carry select adder verilog codes PLESSEY CLA low power and area efficient carry select adder v 32 bit barrel shifter vhdl advantages of master slave jk flip flop half adder 74 full subtractor circuit using nand gate 0-99 counter by using 4 dual jk flip flop 3 bit carry select adder verilog codes PDF

    hp laptop inverter board schematic

    Abstract: dilmon hp laptop inverter SCHEMATIC laptop inverter SCHEMATIC TRANSISTOR DS3535 PLESSEY CLA
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS AUGUST 1992 DS3535 - 1.0 CLA70000V LOW VOLTAGE SPECIFICATION 1.0µ CMOS GATE ARRAYS FEATURES • Operates at 3.3V ■ 1.0µ 0.8µ Leff twin well, epitaxial CMOS process


    Original     		DS3535 CLA70000V are455 hp laptop inverter board schematic dilmon hp laptop inverter SCHEMATIC laptop inverter SCHEMATIC TRANSISTOR PLESSEY CLA PDF

    automatic water level controller 7400 circuit

    Abstract: 7400 ecl inverter MATRA MHS MG1000E MG1004E MG1009E MG1014E MG1020E MG1033E MG1042E
    Text: MG1RT MG1RT Sea of Gates Series 0.6 Micron CMOS Description The MG1RT series is a 0.6 micron 3 metal layers, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1RT is


    Original     		PDF

    ttl crystal oscillator 32khz

    Abstract: DS3697 FQFP100 TQFP100 5mhz crystal oscillator MQFP-120
    Text: CLR70000 1.0µ 0.8µ L eff CMOS Gate Arrays DS3697 ISSUE 2.0 March 1993 Ordering Information Features • 1.0µ (0.8µ Leff) twin well, epitaxial CMOS process • Architecture optimised for Quad Flat Packs • New peripheral design employing state-of-the-art pad


    Original     		CLR70000 DS3697 CLR70000 ttl crystal oscillator 32khz DS3697 FQFP100 TQFP100 5mhz crystal oscillator MQFP-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MARCH 1993 DS3697-2.0 CLR70000 1.0µ 0.8µ L eff CMOS GATE ARRAYS FEATURES • 1.0µ (0.8µ Leff) twin well, epitaxial CMOS process ■ Architecture optimised for Quad Flat Packs


    Original     		DS3697-2 CLR70000 CLA70000 PDF

    FQFP100

    Abstract: 5mhz crystal oscillator DS3697 TQFP100 zarlink CLA
    Text: CLR70000 1.0µ 0.8µ L eff CMOS Gate Arrays DS3697 ISSUE 2.0 March 1993 Ordering Information Features • 1.0µ (0.8µ Leff) twin well, epitaxial CMOS process • Architecture optimised for Quad Flat Packs • New peripheral design employing state-of-the-art pad


    Original     		CLR70000 DS3697 CLR70000 FQFP100 5mhz crystal oscillator DS3697 TQFP100 zarlink CLA PDF

    SP 5001 IC INVERTER

    Abstract: 555timer schmitt trigger using ic 555 ames 5 op-amp 4136 555timer ic SP 5001 inverter D flip-flop to T Flipflop circuit converter L 296 SP 5001 IC
    Text: ELECTRONIC TECHNOLOGY 2=îE D □ 355G5flb 0QGG141» Q Q E L T C AD20S1 Series CMOS Semicustom Arrays High Output Mixed-mode CMOS 5-Mlcron Sl-gate CMOS Arrays • Analog functions Including Op-amps, voltage references, comparators, oscillators, and analog switches


    OCR Scan     		32SG2ab AD20SI GA3-90 355050b OA3-90 -A020SI8Â AD20SI-440 IA50OIO-8284 SP 5001 IC INVERTER 555timer schmitt trigger using ic 555 ames 5 op-amp 4136 555timer ic SP 5001 inverter D flip-flop to T Flipflop circuit converter L 296 SP 5001 IC PDF

    35502

    Abstract: 701-c
    Text: ELECTRON IC TECHNOLOGY EOE D • 3S 5G. 2ö b G000021 □ ■ v T-m -a-o<\ CMOS Semicustom Arrays AD20Si Series Advance Information High Output CMOS Logic 5-Mlcron Sl-gate CMOS Gate-Arrays • • • • • Flexible high current output drivers eliminate external drive


    OCR Scan     		G000021 GA3-88 32502flb AD20SI AD20SI-130 35502 701-c PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic MG2 Semiconductors MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS prod­ uct family. Several arrays up to 700k cells cover all sys­ tem integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS


    OCR Scan     		BOUT12 PDF

    TEMIC ecl

    Abstract: microcontroller radiation tolerance microcontroller radiation hard CLCC 84 CMOS NAND2
    Text: Temic Full Custom: MF Semiconductors 0.8-fxm BiCMOS Gate Array Description MF is a high speed gate array combining 10-GHz n-p-n and integration close to that of CMOS LSIs, keeping low bipolar transistors, with CMOS 0.8-nm, two metal layer power competitiveness.


    OCR Scan     		10-GHz 10-May-96 TEMIC ecl microcontroller radiation tolerance microcontroller radiation hard CLCC 84 CMOS NAND2 PDF

    G2265E

    Abstract: No abstract text available
    Text: Temic MG2RT Semiconductors Radiation Tolerant 0.5-jim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured


    OCR Scan     		BOUT12 G2265E PDF

    MQFPL160

    Abstract: No abstract text available
    Text: T em ic MG2RT Semiconductors Radiation Tolerant 0.5-jiim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured


    OCR Scan     		OAI22 MQFPL160 PDF