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    Standex-Meder Electronics S12R-SSRDSO-NOSL5-500

    SPEED SWITCH GEAR - CYLINDER, TH
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    DigiKey S12R-SSRDSO-NOSL5-500 Bulk 14 1
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    Mouser Electronics S12R-SSRDSO-NOSL5-500 6
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    Super Micro Computer Inc AOC-SIMSO+ // NO SKT-0240L

    IPMI 2.0 with a Dedicated LAN Add-On Card for System Monitoring; Diagnosis and Management - Bulk (Alt: AOC-SIMSO+ // NO SKT-0240L)
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    Middle Atlantic Products RSHA-SONOS-AMP4

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    Middle Atlantic Products RSHA-SONOS-AMP2

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    Middle Atlantic Products RSHA-SONOS-AMP6

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    SONOS Datasheets Context Search

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    sonos Cypress Semiconductor

    Abstract: sonos SONOS flash memory
    Text: Press Release CYPRESS ACQUIRES SONOS TECHNOLOGY FOR EMBEDDED NON-VOLATILE MEMORY INTEGRATION Cost-Effective Technology to be Used in Microcontrollers, Timing Generators SAN JOSE, Calif., September 14, 1999 - Cypress Semiconductor Corp. NYSE:CY today announced


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    FLASH370i sonos Cypress Semiconductor sonos SONOS flash memory PDF

    IRf 447 MOSFET

    Abstract: TO-25X smd diode IF
    Text: Application Note AN-1016 Hermetic Surface-Mount Discrete Semiconductor, Solutions to Assembly Integration By Tiva Bussarakons Table of Contents Page Introduction . …….2


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    AN-1016 O-25x O-257, O-254, IRf 447 MOSFET TO-25X smd diode IF PDF

    Untitled

    Abstract: No abstract text available
    Text: CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B 64-Kbit 8 K x 8 SPI nvSRAM 64Kbit (8K×8) SPI nvSRAM 特長 „ 元々8K×8として編成された64Kbitの不揮発性 SRAM (nvSRAM) ˆ パワーダウン時に AutoStore( 自動的ストア開始 ) するか


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    CY14MB064Q1B/CY14MB064Q2B CY14ME064Q1B/CY14ME064Q2B 64-Kbit 64Kbit 40MHz 64Kbitã PDF

    XH018

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron


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    XH018 XH018 18-micron PDF

    P-18585

    Abstract: DS1233
    Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1233 Oct-96 9644 A5 CARSEM DM635839AAA 1.2µ NITRIDE 03 SOT223 STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase


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    DS1233 Oct-96 DM635839AAA OT223 P-18585 P-18652 P-18653, P-18764 P-18765 P-18585 DS1233 PDF

    16875

    Abstract: ds1232 P-16852 16876
    Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1232 Jan-96 9547 C1 ANAM, K. DN537172ABA 3.0µ OX/NI 16 SOIC STRESS/JOB NO. Preconditioning P/C : HTC Vapor Phase P-16818 READPOINT (Sample Size/No. of Fails)


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    DS1232 Jan-96 DN537172ABA P-16818 P-16852 P-16853, P-16875 P-16876 16875 ds1232 P-16852 16876 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY14C256PA CY14B256PA CY14E256PA 256-Kbit 32 K x 8 SPI nvSRAM with Real Time Clock 256-Kbit (32 K × 8) SPI nvSRAM with Real Time Clock Features ❐ ❐ • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 32 K × 8


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    CY14C256PA CY14B256PA CY14E256PA 256-Kbit 256-Kbit PDF

    8-Channel opamp mux

    Abstract: high level block diagram for eeprom simple switch block diagram TEMPERATURE DEPENDENT DC FAN SPEED CONTROL usb flash drive block diagram 12 volts Voltage Doubler project 3.3v supply opamp ELP 02V error multiplexer comparator parity microcontroller based temperature control fan
    Text: PRELIMINARY CY8CNP102B, CY8CNP102E Nonvolatile Programmable System-On-Chip nvPSoC Overview The Cypress nonvolatile Programmable System-On-Chip (nvPSoC) processor combines a versatile Programmable System-on-Chip (PSoC ) core with an infinite endurance


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    CY8CNP102B, CY8CNP102E 8-Channel opamp mux high level block diagram for eeprom simple switch block diagram TEMPERATURE DEPENDENT DC FAN SPEED CONTROL usb flash drive block diagram 12 volts Voltage Doubler project 3.3v supply opamp ELP 02V error multiplexer comparator parity microcontroller based temperature control fan PDF

    DC04 display

    Abstract: how to test POWER MOSFET with digital multimeter tektronix 576 curve tracer VISHAY VT 300 WEIGHT INDICATOR TSMC 0.35Um FLUKE 79 manual THERMAL ELECTRIC COOLER hp 4274A 532 nm laser diode PHOTO TRANSISTOR ppt
    Text: Quality And Reliability Report 2005 DC04-0001 Page 1 of 79


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    DC04-0001 DC04 display how to test POWER MOSFET with digital multimeter tektronix 576 curve tracer VISHAY VT 300 WEIGHT INDICATOR TSMC 0.35Um FLUKE 79 manual THERMAL ELECTRIC COOLER hp 4274A 532 nm laser diode PHOTO TRANSISTOR ppt PDF

    Untitled

    Abstract: No abstract text available
    Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS5002 Apr-97 9712 M3 ANAM, K. DN507374ABY 1.2µ OX/NI 80 PQFP STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase


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    DS5002 Apr-97 DN507374ABY P-19491 P-19494 P-19495, P-19530 P-19531 PDF

    an 17820

    Abstract: DS2107A
    Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2107A Jul-96 9623 A6 ANAM, K. DN604282AAB1 1.2µ NITRIDE 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase


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    DS2107A Jul-96 DN604282AAB1 P-17820 P-17863 P-17864, P-17904 P-17905 an 17820 DS2107A PDF

    P-20460

    Abstract: 20461 DS2181A
    Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2181A Aug-97 9728 A2 ANAM, K. DN722742ABB 2.0µ OXIDE 44 PLCC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): T/C: -55°C to +125°C, 10~


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    DS2181A Aug-97 DN722742ABB P-20243 P-20302 P-20303, P-20458 P-20459 P-20460 20461 DS2181A PDF

    hot electron devices

    Abstract: igfet sonos SST superflash Dual-Gate Mosfet electric field permittivity DSASW0037374 superflash sst
    Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 809 An Analytical Model for Optimization of Programming Efficiency and Uniformity of Split Gate Source-Side Injection Superflash Memory Huinan Guan, Member, IEEE, Dana Lee, Member, IEEE, and G. P. Li


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    PDF

    7C83900A

    Abstract: CY22393 CY22394 CY22395 SONOS flash memory
    Text: CY22390WAF Three-PLL Serial Programmable FLASH Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to three unique frequencies on up to six outputs from an external source PLLs Ultrawide divide counters (8-bit Q, Allows for 0-ppm frequency generation and frequency conversion under the most


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    CY22390WAF 11-bit CY22390WAF 7C83900A CY22393 CY22394 CY22395 SONOS flash memory PDF

    DS12885

    Abstract: No abstract text available
    Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS12885 Nov-95 9538 A2 ANAM, K. DN531869AAD1 1.2µ OX/NI 24 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase


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    DS12885 Nov-95 DN531869AAD1 P-16605 P-16649 P-16650, P-16679 P-16680 DS12885 PDF

    21103

    Abstract: transistor HR DS1267 p21105 HR 250 P21103 P-21105
    Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1267 Nov-97 9737 A1 ANAM, PI. DK727730AAA 1.2µ OX/NI 20 TSSOP STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): 0 Hr


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    DS1267 Nov-97 DK727730AAA P-20871 P-20990 P-20991, P-21102 P-211JOB 21103 transistor HR DS1267 p21105 HR 250 P21103 P-21105 PDF

    DS1267

    Abstract: P-17298
    Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1267 Apr-96 9612 A1 HYUNDAI DL603183AAL 1.2µ OX/NI 16 SOIC STRESS/JOB NO. Preconditioning P/C : HTC Vapor Phase P-17251 READPOINT (Sample Size/No. of Fails)


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    DS1267 Apr-96 DL603183AAL P-17251 P-17298 P-17299, P-17411 P-17412 DS1267 P-17298 PDF

    VC1037

    Abstract: ELP 02V AN2015 LOAD CELL psoc psoc c code for ring counter
    Text: PRELIMINARY CY8CNP102B, CY8CNP102E Nonvolatile Programmable System-on-Chip PSoC NV Overview • The Cypress nonvolatile Programmable System-on-Chip (PSoC® NV) processor combines a versatile Programmable System-on-Chip (PSoC) core with an infinite endurance


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    CY8CNP102B, CY8CNP102E VC1037 ELP 02V AN2015 LOAD CELL psoc psoc c code for ring counter PDF

    Untitled

    Abstract: No abstract text available
    Text: CY14V101Q3 1 Mbit 128 K x 8 Serial SPI nvSRAM Features • 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using


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    CY14V101Q3 PDF

    CY14X101PA

    Abstract: No abstract text available
    Text: CY14C101PA CY14B101PA CY14E101PA 1-Mbit 128 K x 8 Serial (SPI) nvSRAM with Real Time Clock 1-Mbit (128 K × 8) Serial (SPI) nvSRAM with Real Time Clock Features • Write protection ❐ Hardware protection using Write Protect (WP) pin ❐ Software protection using Write Disable instruction


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    CY14C101PA CY14B101PA CY14E101PA CY14X101PA PDF

    Untitled

    Abstract: No abstract text available
    Text: 512-Kbit 64 K x 8 Serial (SPI) nvSRAM 512-Kbit (64 K × 8) Serial (SPI) nvSRAM Features • ■ 512-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 64 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using


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    CY14B512Q1 CY14B512Q2 CY14B512Q3 512-Kbit 512-Kbit CY14B512Q1) PDF

    Untitled

    Abstract: No abstract text available
    Text: CY14B256Q1 CY14B256Q2 CY14B256Q3 256-Kbit 32 K x 8 Serial (SPI) nvSRAM 256-Kbit (32 K × 8) Serial (SPI) nvSRAM Features • ■ 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 32 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated


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    CY14B256Q1 CY14B256Q2 CY14B256Q3 256-Kbit 256-Kbit CY14B256Q1) 40-MHzng PDF

    Untitled

    Abstract: No abstract text available
    Text: CY14C512Q CY14B512Q CY14E512Q 512-Kbit 64 K x 8 SPI nvSRAM 512-Kbit (64 K × 8) SPI nvSRAM Features • ■ 512-Kbit nonvolatile static random access memory (nvSRAM) internally organized as 64 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated


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    CY14C512Q CY14B512Q CY14E512Q 512-Kbit 512-Kbit CY14X512Q1A) CY14C512Q: CY14B512Q: CY14E512Q: PDF

    equivalent transistor TT 3034

    Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


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