sram
Abstract: sram datasheet FT6116 cmos sram S-RAM sram 2k x 8
Text: FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 FT6116 2K X 8 CMOS SRAM FT6116 120 FT6116 150 FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 120 2 FT6116 150(2) FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116
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FT6116
sram
sram datasheet
FT6116
cmos sram
S-RAM
sram 2k x 8
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Untitled
Abstract: No abstract text available
Text: V62C3162096L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C3162096L is a Low Power CMOS Static
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V62C3162096L
48-fpBGA
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V62C3162048L
Abstract: No abstract text available
Text: V62C3162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C3162048L is a Low Power CMOS Static
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V62C3162048L
I/O16.
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Untitled
Abstract: No abstract text available
Text: V62C1162096L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 35mA ICC at 70ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C1162096L is a Low Power CMOS Static
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V62C1162096L
48-fpBGA
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V62C3161024L
Abstract: No abstract text available
Text: V62C3161024L L Ultra Low Power 64K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 40mA ICC at 55ns - Stand-by: 5 µA (CMOS input/output) 1 µA (CMOS input/output, L version) TheV62C3161024L is a Low Power CMOS Static RAM
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V62C3161024L
TheV62C3161024L
I/O16.
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Untitled
Abstract: No abstract text available
Text: V62C2162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C2162048L is a Low Power CMOS Static
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V62C2162048L
48-fpBGA
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TBA 120T
Abstract: V62C1162048L TBA 120M
Text: V62C1162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 35mA ICC at 70ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C1162048L is a Low Power CMOS Static
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V62C1162048L
I/O16.
TBA 120T
TBA 120M
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Untitled
Abstract: No abstract text available
Text: V62C2162096L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Ultra Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C2162096L is a Low Power CMOS Static
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V62C2162096L
48-fpBGA
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8
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KM684000A
512Kx8
32-DIP,
32-SOP,
32-TSOP
D23bSfl
7TL4142
0G23bSc
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Untitled
Abstract: No abstract text available
Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 128K x 8
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KM681000B
128Kx8
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TSOP 173 g
Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Text: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8
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OCR Scan
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KM684000A
512Kx8
32-DIP,
32-SOP,
32-TSOP
71b4142
DD23bST
TSOP 173 g
KM684000ALG-7
4000 CMOS
KM684000ALGI-7L
KM684000ALP-7L
KM684000ALP-5L
KM684000AL
KM684000ALI
KM684000ALI-L
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KM62256CLP-7
Abstract: No abstract text available
Text: KM62256C CMOS SRAM ELECTRONICS 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 um CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CMOS process technology. The family
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OCR Scan
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KM62256C
32Kx8
28-DIP,
28-SOP,
28-TSOP
KM62256CL
KM62256CL-
KM62256C
KM62256CLP-7
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F1664C 64Kx16 SRAM Module ELECTRONIC DESIGNS, INC 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM 64Kx16 bit CMOS Static Module consisting of four 4 32Kx8 CMOS Static RAMs. Random Access Memory Module
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EDI8F1664C
64Kx16
EDI8F1664C
32Kx8
32Kx16
1664C
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edi8m1664
Abstract: No abstract text available
Text: ^EDI EDI8F1664C 64Kx16 SRAM Module ELECTRONIC DESIGNS. INC 64Kx16 Static RAM CMOS, Module IFeatures The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM 64Kx16 bit CMOS Static Module consisting of four 4 32Kx8 CMOS Static RAMs. Random Access Memory Module
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EDI8F1664C
64Kx16
EDI8F1664C
32Kx8
32Kx16
edi8m1664
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PDF
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F1664C ELECTRONIC DESIGNS IN C Commercial Megabit SRAM Module 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static 64Kx16 bit CMOS Static Random Access Memory Module
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OCR Scan
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64Kx16
EDI8F1664C
EDI8F1664C
32Kx8
32Kx16
DQ0-DQ15
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PDF
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KM68V4000AL-L
Abstract: KM68U4000A lm68
Text: KM68V4000A, KM68U4000A Family CMOS SRAM 512K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION . Process Technology : O .V n CMOS • Organization : 512Kx8 The KM68V400QA and KM68U4000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family
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KM68V4000A,
KM68U4000A
512Kx8
KM68V400QA
32-SOP-52S,
32-TSOP2-4
KM68V4000AL
KM68V4000AL-L
lm68
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F1664C ÉLECTRONS DESIGNS INC. Commercial Megabit SRAM Module 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs. 64Kx16 bit CMOS Static Random Access Memory Module
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EDI8F1664C
64Kx16
EDI8F1664C
32Kx8
32Kx16
EDI8F1664C30M6C
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7470 TTL
Abstract: IC 7470 EDI8F1664C70PSC
Text: ^EDI EDI8F1664C-PSC 64Kx16 SRAM Module ELECTRONIC DESIGNS, INC 64Kx16 Static RAM CMOS, Module IFeatures The EDI8F1664C-PSC is a high speed 64Kx16 CMOS 64Kx16 bit CMOS Static Static RAM Module consisting of four 4 32Kx8 CMOS Random Access Memory Module Static RAMs.
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EDI8F1664C-PSC
64Kx16
100ns
EDI8F1664C-PSC
32Kx8
7470 TTL
IC 7470
EDI8F1664C70PSC
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Untitled
Abstract: No abstract text available
Text: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. KM68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V
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KM68V4000A
512Kx8
32-SOP,
32-TSOP
KM68V4000AL
KM68V4000AL-L
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PDF
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32Kx16
Abstract: No abstract text available
Text: W D\ EDI8F1664C-PSC m m ELECTRONIC DESIGNS, INC. 64Kx16 SRAM Module 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C-PSC is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS 64Kx16 bit CMOS Static Random Access Memory Module
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OCR Scan
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EDI8F1664C-PSC
64Kx16
100ns
EDI8F1664C-PSC
32Kx8
32Kx16
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A2ND
Abstract: KM68U512ALE-L KM68V512A
Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage The KM68V512A and KM68U512A family are fabricated by SAMSUNG'S advanced CMOS process
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KM68V512A,
KM68U512A
64Kx8
KM68V512A
32-SOP,
32-TSOP
A2ND
KM68U512ALE-L
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PDF
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F1664C 64Kx16 SRAM Module EIECTRO N C 0CSK5N& N C . 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS Static RAM 64Kx16 bit CMOS Static Module consisting of four 4 32Kx8 CMOS Static RAMs. Random Access Memory Module
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OCR Scan
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64Kx16
EDI8F1664C
EDI8F1664C
32Kx8
32Kx16
DQ8-DQ15)
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PDF
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D015
Abstract: 32Kx16bit
Text: ^E D I EDI8M1664C50/60/70/85/100 Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8M1664C is a high speed 64Kx16 CMOS Static 64Kx16 bit CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static Random Access Memory Module
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OCR Scan
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EDI8M1664C50/60/70/85/100
64Kx16
EDI8M1664C
32Kx8
32Kx16bitseach.
DQ8-DQ15)
EDI8M81664C
Fu50/60/70/85/100
D015
32Kx16bit
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Untitled
Abstract: No abstract text available
Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%
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OCR Scan
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KM68512A
64Kx8
32-SOP,
32-TSOP
DG23b27
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PDF
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