TSOP 2-44

Abstract: km68
Contextual Info: KM68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns m ax. • Low power dissipation - S tandb y(C M O S ) : 180n W (M ax.) L Version : 5 4n W (M ax.) L-L Version -O p era tin g

32-TSOP2-400F

Abstract: altl
Contextual Info: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Ststic RAM Low VoltQge Operstion FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :3«W(Typ.) L-Version 1.5« W(Typ.) LL-Version

Contextual Info: ADVANCED KM68V4000AL/AL-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100,120ns Max. • Low Power Dissipation Standby (CMOS) : 3,«W(Typ.) L-Version 1.5/i W(Typ.) LL-Version

Contextual Info: KM68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns max. • Low power dissipation - Standby(CMOS) : 180nW(Max.) L Version : 54nW (Max.) L-L Version -O p era ting : 144mW /MHz(Max.)

32-TSOP2-400F

Abstract: altl
Contextual Info: ADVANCED CMOS SRAM KM68V4000AL/AL-L 524,288 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION « Fast Access Time : 70, 100,120ns{Max. • Low Power Dissipation Standby CMOS) : 3// W(Typ.) L-Version 1.5/i W(Typ.) LL-Version

KM68V4000

Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 um CMOS Organization : 512K x 8 Power Supply Voltage : 3.3 +/- 0.3V * Low Data Retention Voltage : 2V Min

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

"30 pin simm"

Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
Contextual Info: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36

KM68U4000A

Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 256Kx16 • Power Supply Voltage KM68V4000A Family : 3.3 ± 0.3V KM68U4000A Family : 3.0 ± 0.3V

Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. KM68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V

KM6 II

Abstract: KM68U4000A
Contextual Info: KM6 1 6 U 4 0 0 0 A CMOS SRAM ELECTRONICS 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 256Kx16 • Power Supply Voltage KM68V4000A Family : 3.3 +/- 0.3V KM68U4000A Family : 3.0 +/- 0.3V

SRAM sheet samsung

Abstract: 44TSOP KM6 II KM68U4000A 414KM 44-TSOP
Contextual Info: K M6 1 6 V 4 0 0 0 A CMOS SRAM ELECTRONICS 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM616V4000A and KM616U4000A family are • Organization: 256Kx16 fabricated by SAMSUNG'S advanced CMOS process

KM616U1000BL-L

Abstract: KM68U512ALE-L
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. Low Power SRAM Low Vcc Operation Density 256K Org. & Op Vcc 32K X 8 KM62V256CL-L (Vcc=3.0~3.6V) 32Kx8 (Vcc=2.7~3.3V) 512K 6 4K X 8 (Vcc=3.0~3.6V) 64KX8 (Vcc=2.7~3.3V) 1M Product No’ 128KX8 (Vcc=3.0~3.6V) Speed 70/100 30/10

F TTL family characteristics

Abstract: KM68U4000A
Contextual Info: KM68V4000A, KM68U4000A Family CMOS SRAM Document Title 512K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft August 16, 1994 Advance 0.1 Revise - Speed bin=70/85/100ns at Vcc=3.3V December 22, 1994

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

cs 308

Abstract: KM68U4000A
Contextual Info: KM68U4000A CMOS SRAM ELECTRONICS 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx 8 • Power Supply Voltage KM68V4000A Family : 3.3 +/- 0.3V KM68U4000A Family : 3.0 +/- 0.3V

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs

KM68V4000AL-L

Abstract: KM68U4000A lm68
Contextual Info: KM68V4000A, KM68U4000A Family CMOS SRAM 512K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION . Process Technology : O .V n CMOS • Organization : 512Kx8 The KM68V400QA and KM68U4000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family

KM68U4000A

Contextual Info: KM68V4000A, KM68U4000A Family CMOS SRAM Document Title 512K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft August 16, 1994 Advance 0.1 Revise - Speed bin=70/85/100ns at Vcc=3.3V December 22, 1994