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    SEC/98+ KM616V1000BLT-7L

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    Samsung Semiconductor KM616V1000BLTI-7L

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    Quest Components KM616V1000BLTI-7L 1,596
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    Samsung Semiconductor KM616V1000BLT-7L

    Static RAM, 64Kx16, 44 Pin, Plastic, TSOP
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    Quest Components KM616V1000BLT-7L 668
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    Chip 1 Exchange KM616V1000BLT-7L 3,095
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    Samsung Semiconductor KM616V1000BLTI7L

    Electronic Component
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    ComSIT USA KM616V1000BLTI7L 7,824
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    KM616V1000BL Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616V1000BLR-7L Samsung Electronics 64K x16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V1000BLRI-7L Samsung Electronics 64K x16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V1000BLRI-8L Samsung Electronics 64K x16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V1000BLT-7L Samsung Electronics 64K x16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V1000BLTI-7L Samsung Electronics 64K x16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V1000BLTI-8L Samsung Electronics 64K x16 bit Low Power and Low Voltage CMOS Static RAM Original PDF

    KM616V1000BL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM616U1000BLT-10L

    Abstract: KM616U1000BLTI-10L KM616U1000B KM616V1000B KM616V1000BLT-7L
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0


    Original
    PDF KM616V1000B, KM616U1000B 100ns KM616V1000B KM616U1000BLT-10L KM616U1000BLTI-10L KM616V1000BLT-7L

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original
    PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original
    PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    SRAM 64Kx16

    Abstract: No abstract text available
    Text: Preliminary KM616V1OOOBLI / Ll-L CMOS SRAM 64Kx16 Bit Low Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C The KM616V1000BLI/LI-L is a 1,048,576-bit high • Fast Access Time : 70, 100 ns max.


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    PDF KM616V1OOOBLI 64Kx16 360nW 216mW I/01-I/08 I/09-I/016 KM616V1000BLTI/LTI-L: 400mil KM616V1000BLRI/LRI-L: SRAM 64Kx16

    100PF

    Abstract: 0213T
    Text: Preliminary CMOS SRAM K M 6 1 6 V 1 OOOBL / L-L 64Kx16 B it Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100 ns max. The KM616V1000BL/L-L is a 1,048,576-bit high speed • Low Power Dissipation Static Random Access Memory organized as 65,536


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    PDF KM616V1OOOBL 64Kx16 180nW 54jiW 216mW I/01-I/08 KM616V1000BLT/LT-L: 400mil KM616V1000BLR/LR-L: 100PF 0213T

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


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    PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    km616u1000b

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM616V1000B and KM616U1000B family are • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16


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    PDF KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 um CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage


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    PDF KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP 7Tb4142

    KM616U1000BL-L

    Abstract: KM68U512ALE-L
    Text: MEMORY ICs FUNCTION GUIDE 2. Low Power SRAM Low Vcc Operation Density 256K Org. & Op Vcc 32K X 8 KM62V256CL-L (Vcc=3.0~3.6V) 32Kx8 (Vcc=2.7~3.3V) 512K 6 4K X 8 (Vcc=3.0~3.6V) 64KX8 (Vcc=2.7~3.3V) 1M Product No’ 128KX8 (Vcc=3.0~3.6V) Speed 70/100 30/10


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    PDF KM62V256CL-L KM62V256CLE-L KM62V256CLI-L 28-TSOP 28-TSOP® 28-SOP KM616V1000BL KM616V1000BL-L KM616V1000BLE KM616V1 KM616U1000BL-L KM68U512ALE-L

    KM616U1000BL-L

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI


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    PDF KM62256CL KM62256CL-L KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L 28-TSOP 28-DIP 28-SOP KM68512CL KM616U1000BL-L

    Untitled

    Abstract: No abstract text available
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0 April 13, 1996


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    PDF KM616V1000B, KM616U1000B 100ns KM616V1000B KM616V1QQGB KM616U1QQQB

    KM616U1000B

    Abstract: KM616V1000B KM616V1000
    Text: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 urn CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage


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    PDF KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP als-10 KM616V1000

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V1OOOBL / L-L 64Kx16 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100 ns max. The KM616V1OOOBL/L-L is a 1,048,576-bit high speed • Low Power Dissipation Static Random Access Memory organized as 65,536


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    PDF KM616V1OOOBL 64Kx16 KM616V1OOOBL/L-L 576-bit 180nW 216mW KM616V1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V1OOOBLI / Ll-L 64Kx16 Bit Low Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C • Fast Access Time : 70, 100 ns max. • Low Power Dissipation Standby(CMOS): 360|xW(max.)L-Version


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    PDF KM616V1OOOBLI 64Kx16 216mW KM616V1000BLI/LI-L 576-bit KM616 002140b