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    CMPA55 Search Results

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    CMPA55 Price and Stock

    MACOM CMPA5585030F

    IC RF AMP 5.5GHZ-8.5GHZ 440213
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA5585030F Tray 18 1
    • 1 $909.4
    • 10 $861.675
    • 100 $861.675
    • 1000 $861.675
    • 10000 $861.675
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    Mouser Electronics CMPA5585030F 67
    • 1 $873.79
    • 10 $873.79
    • 100 $873.79
    • 1000 $873.79
    • 10000 $873.79
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    Richardson RFPD CMPA5585030F 2 1
    • 1 $1134.72
    • 10 $1134.72
    • 100 $1134.72
    • 1000 $1134.72
    • 10000 $1134.72
    		Buy Now

    MACOM CMPA5585030D

    IC RF AMP GPS 5.5GHZ-8.5GHZ DIE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA5585030D Tray 10
    • 1 -
    • 10 $997.263
    • 100 $997.263
    • 1000 $997.263
    • 10000 $997.263
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    Mouser Electronics CMPA5585030D
    • 1 -
    • 10 $979.5
    • 100 $979.5
    • 1000 $979.5
    • 10000 $979.5
    		Get Quote

    MACOM CMPA5585025F-AMP

    AMPLIFIER, 5.5-8.5GHZ, CMPA55850
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA5585025F-AMP Box 2
    • 1 -
    • 10 $1276.44
    • 100 $1276.44
    • 1000 $1276.44
    • 10000 $1276.44
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    MACOM CMPA5585030F-AMP

    CMPA5585030F DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMPA5585030F-AMP Box 1
    • 1 $1365.81
    • 10 $1365.81
    • 100 $1365.81
    • 1000 $1365.81
    • 10000 $1365.81
    		Buy Now
    Richardson RFPD CMPA5585030F-AMP 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    MACOM CMPA5585030F-TB

    RF & MW AMPLIFIER EVALUATION BOARD/DESIGNER KIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD CMPA5585030F-TB 4 1
    • 1 $550
    • 10 $550
    • 100 $550
    • 1000 $550
    • 10000 $550
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    CMPA55 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CMPA5585025F Cree RF Amplifiers, RF/IF and RFID, RF AMP 8.5GHZ MMIC PA Original PDF
    CMPA5585025F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF AMP 8.5GHZ MMIC PA Original PDF
    CMPA5585030D Wolfspeed IC AMP 5.5GHZ-8.5GHZ 30W Original PDF
    CMPA5585030F Cree/Wolfspeed RF/IF and RFID - RF Amplifiers - IC RF AMP 5.5GHZ-8.5GHZ 440213 Original PDF
    CMPA5585030F-AMP Wolfspeed CMPA5585030F DEV BOARD WITH HEMT Original PDF
    CMPA5585030F-TB Cree/Wolfspeed RF/IF and RFID - RF Evaluation and Development Kits, Boards - TEST BOARD Original PDF

    CMPA55 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    CMPA5585025F

    Abstract: power transistor gaas x-band CMPA5585025F-TB
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F power transistor gaas x-band CMPA5585025F-TB PDF

    CMPA5585025D

    Abstract: vd2b
    Text: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMP5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		CMPA5585025D CMP5585025D CMPA5585025D vd2b PDF

    CMPA5585025D

    Abstract: No abstract text available
    Text: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		CMPA5585025D CMPA5585025D 38rolina, PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMP5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		CMPA5585025D CMP5585025D CMPA5585025D PDF

    RF3-50

    Abstract: POWER456
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F RF3-50 POWER456 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F PDF

    x-Band Hemt Amplifier

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		CMPA5585025F CMPA5585025F CMPA55 85025F x-Band Hemt Amplifier PDF