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    CMT2301GM233 Search Results

    CMT2301GM233 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CMT2301GM233 Unknown CMT2301 Original PDF

    CMT2301GM233 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CMC lcd

    Abstract: p-channel mosfet sot-23 P-Channel MOSFET 20V P-Channel Power MOSFET CMT2301 CMT2301GM233 CMT2301M233
    Text: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V


    Original     		CMT2301 CMT2301 -20V/-2 -20V/-1 OT-23-3 CMC lcd p-channel mosfet sot-23 P-Channel MOSFET 20V P-Channel Power MOSFET CMT2301GM233 CMT2301M233 PDF

    CMC lcd

    Abstract: sot-23 P-Channel MOSFET CMT2301 CMT2301GM233 CMT2301M233
    Text: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode ‹ -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell ‹ -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V


    Original     		CMT2301 CMT2301 -20V/-2 -20V/-1 OT-23-3 CMC lcd sot-23 P-Channel MOSFET CMT2301GM233 CMT2301M233 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V


    Original     		CMT2301 CMT2301 -20V/-2 -20V/-1 OT-23-3 PDF