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    COLLECTOR CHARACTERISTIC CURVE Search Results

    COLLECTOR CHARACTERISTIC CURVE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54H22/BCA Rochester Electronics LLC 54H22 - NAND Gate, Dual 4-Iinput, With Open-Collector Outputs - Dual marked (M38510/02307BCA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5409/BCA Rochester Electronics LLC 5409 - AND GATE, QUAD 2-INPUT, WITH OPEN-COLLECTOR OUTPUTS - Dual marked (M38510/01602BCA) Visit Rochester Electronics LLC Buy
    5401/BDA Rochester Electronics LLC 5401 - NAND GATE, QUAD 2-INPUT, WITH OPEN-COLLECTOR OUTPUTS - Dual marked (M38510/00107BDA) Visit Rochester Electronics LLC Buy
    5403/BCA Rochester Electronics LLC 5403 - NAND GATE, QUAD 2-INPUT, WITH OPEN-COLLECTOR OUTPUTS - Dual marked (M38510/00109BCA) Visit Rochester Electronics LLC Buy

    COLLECTOR CHARACTERISTIC CURVE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STS5343

    Abstract: 90550
    Text: STS5343 Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector dissipation PC 625 mW Junction temperature


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    STS5343 KST-9055-001 STS5343 90550 PDF

    STC1815

    Abstract: pc 625
    Text: STC1815 NPN Silicon Transistor STC1815 Ta=25°°C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector dissipation


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    STC1815 100mA, STC1815 pc 625 PDF

    10K1

    Abstract: STC1015
    Text: STC1015 PNP Silicon Transistor STC1015 Ta=25°°C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -60 V Collector-Emitter voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector current IC -150 mA Collector dissipation


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    STC1015 -100mA, -10mA 10K1 STC1015 PDF

    Untitled

    Abstract: No abstract text available
    Text: FJX597J FJX597J Capacitor Microphone Applications 3 • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 1. Base 2. Emitter 3. Collector Si N-channel Junction FET


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    FJX597J OT-323 PDF

    LT 74 s

    Abstract: No abstract text available
    Text: KSA1142 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQENCY POWER AMPLIFIER • Complement to KSC2682 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


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    KSA1142 KSC2682 LT 74 s PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2333 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING LOW COLLECTOR SATURATION VOLTAGE SPECIFIED OF REVERSE BIASED SOA WITH INDUCTIVE LOADS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    KSC2333 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSA1370 CRT DISPLAY, VIDEO OUTPUT • High Voltage • Low Reverse Transfer Capacitance : CRE=1.7pF ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


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    KSA1370 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC3569 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING LOW COLLECTOR SATURATION VOLTAGE SPECIFIED OF REVERSE BIASED SOA WITH INDUCTIVE LOADS TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VcBO 500 V Collector Emitter Voltage


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    KSC3569 O-220F 350us, PDF

    Untitled

    Abstract: No abstract text available
    Text: KSB1097 PNP EPITAXIAL SILICO N TRAN SISTO R LOW FREQUENCY POWER AMPLIFIER LOW SP EED SWITCHNG INDUSTRIAL USE • Complement to KSD1588 ABSO LUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC


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    KSB1097 KSD1588 300uS, PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD1588 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to KSB1097 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC 'C o lle c to r Current (Pulse)


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    KSD1588 KSB1097 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Symbol Unit Collector- Base Voltage V cB O 500 V Collector-Emitter Voltage V cE O 400 V Emitter- Base Voltage V ebo Collector Current DC


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    KSC2752 300ns, 00bGb74 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 HIGH POWER DISSIPATION: PC=1.3W TA=25°C Complement to KSD 1691 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Symbol -6 0 V Collector-Emitter Voltage


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    KSB1151 O-126 PDF

    A 986 transistor

    Abstract: SL 100 NPN Transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage: KSD985 : KSD986 Emitter-Base Voltage


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    KSD985/986 KSD985 KSD986 A 986 transistor SL 100 NPN Transistor PDF

    TIP41C

    Abstract: TIP42C
    Text: SEMICONDUCTOR TECHNICAL DATA TIP41C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP42C. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage


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    TIP41C TIP42C. 220AB 600mA 500mA TIP41C TIP42C PDF

    KTA1273

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTA1273 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • Complementary to KTC3205. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -30 V Collector-Emitter Voltage


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    KTA1273 KTC3205. KTA1273 PDF

    transistor ph 30

    Abstract: TIP31C TIP32C
    Text: SEMICONDUCTOR TECHNICAL DATA TIP31C TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP32C. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 100 V V CBO Collector-Emitter Voltage


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    TIP31C TIP32C. 220AB transistor ph 30 TIP31C TIP32C PDF

    2SA1451

    Abstract: 2SA1451A 2SC3709A
    Text: TO SH IBA 2SA1451A SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 451 A Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS M AXIM UM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


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    2SA1451A 2SC3709A 2SA1451 2SA1451A 2SC3709A PDF

    2SB772

    Abstract: 2SB772S 2SD882 2SB772 complement complement 2sd882
    Text: FCI 2SB772/2SB772S PNP Epitaxial Silicon Transistor Semiconductor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to 2SD882 ¡ABSOLUTE MAXIMUM RATINGS ITa = 2 5 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage


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    2SB772/2SB772S 2SD882 2SB772S 2SB772 2SD882 2SB772 complement complement 2sd882 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB601 LOW FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING INDUSTRIAL USE • Complement to KSD560 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcBO Symbol - 100 V Collector-Emitter Voltage


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    KSB601 KSD560 PDF

    2SB772

    Abstract: No abstract text available
    Text: 2SB772/2SB772S PNP Epitaxial Silicon Transistor Semiconductor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to 2SD882 TO-92 i ABSOLUTE MAXIMUM RATINGS ITa = 25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage


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    2SB772/2SB772S 2SD882 2SB772 2SB772S CoIleSB772S 2SB772 PDF

    KSB772

    Abstract: KSD882
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSD882 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-126 • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Rating Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    KSD882 KSB772 O-126 DDBfll35 KSB772 KSD882 PDF

    BC 251 transistor

    Abstract: 50V 1A power transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcEO 150 Collector-Emitter Voltage: KSD985 VcEO 60 V VcEO


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    KSD985/986 KSD985 KSD986 Cycle10% BC 251 transistor 50V 1A power transistor PDF

    t 326 Transistor

    Abstract: GE-325 I326
    Text: KSD882 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-126 • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Unit Rating Collector- Base Voltage VcBO 40 V Collector-Emitter Voltage Emitter- Base Voltage


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    KSD882 KSB772 O-126 10nis, t 326 Transistor GE-325 I326 PDF

    2N4898

    Abstract: 2N4899 2N4900 ib10s
    Text: 2N4898, 2N4899, 2N4900 PNP ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( l c = 100mA, lB = 0 ) Collector Cutoff Current ( VCE = 20 V, lB = 0 )


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    2N4898, 2N4899, 2N4900 100mA, 2N4898 2N4899 2N4898 2N4899 2N4900 ib10s PDF