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    Toshiba America Electronic Components 2SA1451A-Y(F)

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    Quest Components 2SA1451A-Y(F) 639
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    Toshiba America Electronic Components 2SA1451A-Y

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    Quest Components 2SA1451A-Y 125
    • 1 $21.192
    • 10 $21.192
    • 100 $18.0132
    • 1000 $16.9536
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    2SA1451A Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1451(A) Unknown Silicon PNP Transistor Scan PDF
    2SA1451A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1451A Toshiba Silicon PNP epitaxial type transistor for high speed, high current switching applications Scan PDF
    2SA1451A Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1451A-O Toshiba 2SA1451 - TRANSISTOR 12 A, 50 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power Original PDF
    2SA1451AO Toshiba Silicon PNP Epitaxial Transistor Scan PDF
    2SA1451A-O(F) Toshiba 2SA1451 - TRANS PNP 50V 12A 2-10R1A Original PDF
    2SA1451A-Y Toshiba 2SA1451 - TRANSISTOR 12 A, 50 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power Original PDF
    2SA1451AY Toshiba Silicon PNP Epitaxial Transistor Scan PDF
    2SA1451A-Y(F) Toshiba 2SA1451 - TRANS PNP 50V 12A 2-10R1A Original PDF

    2SA1451A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C3709A

    Abstract: 2SA1451A 2SC3709A
    Text: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1451A


    Original     		PDF 2SC3709A 2SA1451A C3709A 2SA1451A 2SC3709A

    a1451a

    Abstract: 2SA1451A A1451 2SC3709A
    Text: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)


    Original     		PDF 2SA1451A 2SC3709A a1451a 2SA1451A A1451 2SC3709A

    a1451a

    Abstract: No abstract text available
    Text: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)


    Original     		PDF 2SA1451A 2SC3709A 2-10R1A a1451a

    C3709A

    Abstract: 2SA1451A 2SC3709A C3709
    Text: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A


    Original     		PDF 2SC3709A 2SA1451A C3709A 2SA1451A 2SC3709A C3709

    C3709A

    Abstract: No abstract text available
    Text: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A


    Original     		PDF 2SC3709A 2SA1451A 2-10R1A C3709A

    a1451a

    Abstract: 2SA1451A 2SC3709A
    Text: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Unit: mm Low collector saturation voltage : VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		PDF 2SA1451A 2SC3709A a1451a 2SA1451A 2SC3709A

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


    Original     		PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1451A T O SH IBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage • V q e (sat)“ —0.4V (Max.) (at Ic = -6A ) High Speed Switching Time : tgtg^l.O^siTyp.)


    OCR Scan     		PDF 2SA1451A 2SC3709A

    2SA1451A

    Abstract: 2SC3709A
    Text: TO SH IBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.) • Complementary to 2SA1451A


    OCR Scan     		PDF 2SC3709A 2SA1451A 2SA1451A 2SC3709A

    2SA1451A

    Abstract: 2SC3709A
    Text: TO SHIBA 2SA1451A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1451A INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I q r = 2 '^ " 0 -6 A )


    OCR Scan     		PDF 2SA1451A 2SC3709A 2SA1451A 2SC3709A

    2SA1451

    Abstract: 2SA1451A 2SC3709A
    Text: TO SH IBA 2SA1451A 2 S A 1 451 A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage 10 ±0.3 . , .x— n a \ t t^ , —


    OCR Scan     		PDF 2SA1451A 2SC3709A 2SA1451 2SA1451A 2SC3709A

    WE VQE 11 E

    Abstract: 2SA1451A 2SC3709A
    Text: 2SC3709A TO SHIBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : V qe (sat)= 0.4V (Max.) High Speed Switching Time : tstg=1.0/¿s (Typ.) Complementary to 2SA1451A


    OCR Scan     		PDF 2SC3709A 2SA1451A WE VQE 11 E 2SA1451A 2SC3709A

    2SA1451

    Abstract: 2SA1451A 2SC3709A
    Text: TO SH IBA 2SA1451A SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 451 A Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS M AXIM UM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF 2SA1451A 2SC3709A 2SA1451 2SA1451A 2SC3709A

    2SA1451

    Abstract: 2SA1451A 2SC3709A
    Text: 2SA1451A TO S H IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 451 A HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • IN D U STRIA L APPLICATIONS U nit in mm Low Collector Saturation Voltage 10 ±0.3 : V CE (sa t)= - 0 .4 V (Max.) (at I c = —6A)


    OCR Scan     		PDF 2SA1451A 2SC3709A 2SA1451 2SA1451A 2SC3709A

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS • • INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage : (sat) = 0.4V (Max.) High Speed Switching Time : tstg=1.0//s (Typ.)


    OCR Scan     		PDF 2SC3709A 2SA1451A

    2SA1451A

    Abstract: 2SC3709A
    Text: TO SH IBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		PDF 2SC3709A 2SA1451A 2SA1451A 2SC3709A

    Untitled

    Abstract: No abstract text available
    Text: 2SC3709A TOSHIBA 2SC3709A TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : V qe (sat)= 0-4V (Max.) High Speed Switching Time : tstg=1.0(us (Typ.)


    OCR Scan     		PDF 2SC3709A 2SA1451A