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    Panduit Corp PPMA1451A

    SS PIPE MRKR, OXYGEN, YL, A,EA
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    Toshiba America Electronic Components 2SA1451A-Y(F)

    Trans GP BJT PNP 50V 12A 3-Pin(3+Tab) TO-220NIS
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    Chip1Stop 2SA1451A-Y(F) 3,290
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    A1451A Datasheets Context Search

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    a1451a

    Abstract: 2SA1451A A1451 2SC3709A
    Text: A1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)


    Original     		PDF 2SA1451A 2SC3709A a1451a 2SA1451A A1451 2SC3709A

    a1451a

    Abstract: No abstract text available
    Text: A1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)


    Original     		PDF 2SA1451A 2SC3709A 2-10R1A a1451a

    a1451a

    Abstract: 2SA1451A 2SC3709A
    Text: A1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process A1451A High-Speed, High-Current Switching Applications • Unit: mm Low collector saturation voltage : VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		PDF 2SA1451A 2SC3709A a1451a 2SA1451A 2SC3709A

    A1451A

    Abstract: No abstract text available
    Text: TOSHIBA 2S A1451A 2 S A 1 451 A TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = -6 A ) High Speed Switching Time : ts^g= 1 .0/ j s (Typ.)


    OCR Scan     		PDF A1451A 2SC3709A A1451A

    A1306 TRANSISTOR

    Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
    Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)


    OCR Scan     		PDF O-220 T0-220 C67078- A1300-A2 A1329-A2 A1301-A2 BUZ11 A1301-A3 A1330-A3 A1331-A2 A1306 TRANSISTOR t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor

    transistor buz 36

    Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
    Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A


    OCR Scan     		PDF 23StQS T0-220 O-220 BUZ10S2 Z72AL Z73AL O-218 transistor buz 36 A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A