2SD1411
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1411 INDUSTRIAL APPLICATIONS Unit in n HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .J± Q 2 FEAT U R E S : . Low Saturation Voltage : v CE sat = 0-5V(Max.) at Ic=4A . Complementary to 2SB1018 MAXIMUM RATINGS (Ta=25°C)
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2SD1411
2SB1018
2SD1411
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2sc1173
Abstract: 2SA473
Text: SILICON NPN EPITAXIAL TYPE 2SC1173 U n i t 10.3 MAX. POWER AMPLIFIER APPLICATIONS, i tí m m 0 3 .6 ± 0 .2 CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpE• Complementary to 2SA473 and 5 Watts Output Applications.
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2SC1173
2SA473
O-220AE
Ic-10mA,
2sc1173
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2SA1302
Abstract: Toshiba 2Sa1302
Text: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL
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2SA1302
2SC3281
2-21F1A
2SA1302
Toshiba 2Sa1302
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2N5067
Abstract: tl 5069
Text: T Y P E S 2 N 5 0 6 7 , 2N5068. 2N5069 N-P-N S IN G L E -D IF F U S E D SILICON PO W ER T R A N S IS T O R S TYPES 2N5067, 2N5068, 2N 5069 BULLETIN NO. DL-S 7211663, JANUARY FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4901 THRU 2N4903
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2N5068.
2N5069
2N5067,
2N5068,
2N4901
2N4903
2N5067
2N5068
2N5069
tl 5069
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2SA1145
Abstract: No abstract text available
Text: 2SA1145 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency : f'r = 200MHz (Typ.) M A X IM U M RATING S (Ta = 25°C)
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2SA1145
2SC2705.
200MHz
O-92MOD
--10mA
--10mA,
--10mA
2SA1145
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2SC3297
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SA1305 POWER AMPLIFIER APPLICATIONS. Unit in mm CAR RADIO AND CAR STEREO OUTPUT STAGE APPLICATIONS. 0 3 .2 ± 0.2 FEATURES: Ytfi . Good Linearity of hpg ^ ♦ Complementary to 2SC3297 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC + 0.25
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2SA1305
2SC3297
2SC3297
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texas instruments tip32
Abstract: tip 31c til 31a texas instruments tip31 TIP31C
Text: TYPES TIP31, TIP31A, TIP31B. TIP31C N-P-N SINGLE-DIFFUSED M ESA SILICON POWER TRANSISTORS 3JCDH m C -< FOR POWER-AMPi-IFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP32, TIP32A, TIP32B, TIP32C u r T> r r m > mw J jH • 40 W at 25°C Case Temperature
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TIP31,
TIP31A,
TIP31B.
TIP31C
TIP32,
TIP32A,
TIP32B,
TIP32C
texas instruments tip32
tip 31c
til 31a
texas instruments tip31
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TDC1005
Abstract: TRW LSI Products
Text: TDC1005 T ir lfV Serial Shift Register Dual 64-Bit • • • • • The TRW TD C1005 is a dual 64-bit positive-edgetriggered serial shift register which operates at 25M Hz. This device is cascadable in the number of words and the word size. Complementary TTL outputs Q and Q
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TDC1005
64-Bit
C1005
64-bit
TDC1005
TRW LSI Products
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ic 2113
Abstract: No abstract text available
Text: RN2112,2113 RN2112 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 03 With. Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process Complementary to RN1112, RN1113
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RN2112
RN2112)
RN1112,
RN1113
RN2112
RN2113
ic 2113
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2sa1943 toshiba transistor
Abstract: No abstract text available
Text: 2SA1943 T O S H IB A 2 S A 1 943 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. • • ^3.3 ±0.2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.
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2SA1943
2SC5200
2-21F1A
-230V
2sa1943 toshiba transistor
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2N5001
Abstract: TCA 875 MW-82 2N5149 2N4999
Text: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias
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2N4999.
2N5001,
2N5147,
2N5149
2N5001
TCA 875
MW-82
2N4999
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DA 2688
Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055
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TIP3055
TIP2955
T0-218AA
7S265
DA 2688
transistor DA 2688
LT 5265
transistor mj 3055
c2688
C-2688
equivalent transistor TIP3055
c2688 L
c2688 transistor
tRANSISTOR c2688
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2SA1301 TOSHIBA
Abstract: No abstract text available
Text: 2SA1301 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm PO W ER AM PLIFIER APPLICATIONS. • 2 0 .SM A X . . 0 3 . 3 ± 0 .2 Complementary to 2SC3280 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. í¡- M A X IM U M RATINGS Ta = 25°C
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2SA1301
2SC3280
2-21F1A
--160V,
--50mA,
2SA1301 TOSHIBA
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2SC5242
Abstract: No abstract text available
Text: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.
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2SC5242
2SA1962
2-16C1A
2SC5242
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2SB1015
Abstract: IC 4025
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 10.3MAX. FEATURES: . Low Collector Saturation Voltage = VcE sat =-1.7V(Max.) at IC=-3A, IB=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406
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2SB1015
2SD1406
-50mA,
2SB1015
IC 4025
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2SC3296
Abstract: IC vertical lg
Text: 2SC3296 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm VERTICAL OUTPUT APPLICATIONS. 1 Û3MAX. 03.2±Q2 FEATURES: . Wide Safe Operating Area. . Complementary to 2SA1304. 1.2 + 0.2 5 0.76-0-15 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC
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2SC3296
2SA1304.
500mA
500mA,
2SC3296
IC vertical lg
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Untitled
Abstract: No abstract text available
Text: 2SC4793 SILICON NPN EPITAXIAL TYPE POW ER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : fr=100M H z Typ. Complementary to 2SA1837 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage
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2SC4793
2SA1837
100mA
500mA,
500mA
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2449
2SB1594
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2SB863
Abstract: 2SD1148
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB863 o POWER AMPLIFIER APPLICATIONS. Unit in mm 159 M AX. 0O.2ÌO.2 FEATURES: . Complementary to 2SD1148 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL
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2SB863
2SD1148
-140V,
-50mA,
2SB863
2SD1148
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transistor 2sa968b
Abstract: No abstract text available
Text: i TOSHIBA TRANSISTOR ZSA96öB SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency: fx=100MHz (Typ.) . Complementary to 2SC2238B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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ZSA96
100MHz
2SC2238B
2SA968B
2SA968B
-55VL50
transistor 2sa968b
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SRG8
Abstract: 74als165
Text: TYP ES S N 5 4 A LS 16 S , S N 74 A LS 16 5 P A R A LLE L LO AD 8-BIT SH IFT REGISTERS D 2 6 6 1 , JU N E 1982 Complementary Outputs I• • SN 54A LS 165 . . . J PACKAGE S N 74A LS 165 . . . N PACKAGE Direct Overriding Load Data Inputs (TOP VIEW) Gated Clock Inputs
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LS165
74ALS165
SRG8
74als165
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2sa965
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 U nit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC2235. = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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2SA965
2SC2235.
--10mA,
--500mA,
-500m
100mA
2sa965
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IC LM 351
Abstract: No abstract text available
Text: RN2314,2315,2316 RN2317,2318 RN2314 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • W ith Built-in Bias Resistors • Simplify Circuit Design • Reduce a Q uantity of Parts and M anufacturing Process • Complementary to RN1314~RN1318
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RN2314
RN2317
RN2314)
RN1314
RN1318
RN2315
RN2316
RN2318
IC LM 351
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TC4007UBP
Abstract: No abstract text available
Text: TP^ fin"#7UDr/ 1IDD/UDl IMDC IU“UU C 2MOS DIGITAL IN T E G R A T E D CIR CU IT S IL IC O N M O N O L IT H IC TC4007UBP/TC4007UBF DUAL COMPLEMENTARY PAIR PLUS INVERTER TC4007UBP/UBF contains three elements of P-channel enhancement type MOS FET and three elements of Nchannel enhancement type MOS FET. One pair of Pchannel and N-channel functions as inverter and
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TC4007UBP/TC4007UBF
TC4007UBP/UBF
TC4007UBP/UBF
TC4007UBP
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