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    RN2112 Price and Stock

    Toshiba America Electronic Components RN2112ACT(TPL3)

    TRANS PREBIAS PNP 50V 0.08A CST3
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    DigiKey RN2112ACT(TPL3) Reel 10,000 10,000
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    RN2112ACT(TPL3) Digi-Reel 1
    • 1 $0.31
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    Toshiba America Electronic Components RN2112,LXHF(CT

    TRANS PREBIAS PNP 50V 0.1A SSM
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    DigiKey RN2112,LXHF(CT Reel 6,000 3,000
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    RN2112,LXHF(CT Cut Tape 1
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    RN2112,LXHF(CT Digi-Reel 1
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    Avnet Americas RN2112,LXHF(CT Reel 36 Weeks 3,000
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    Mouser Electronics RN2112,LXHF(CT 6,000
    • 1 $0.21
    • 10 $0.198
    • 100 $0.133
    • 1000 $0.079
    • 10000 $0.042
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    Toshiba America Electronic Components RN2112,LF(CT

    TRANS PREBIAS PNP 50V 0.1A SSM
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    DigiKey RN2112,LF(CT Cut Tape 3,000 1
    • 1 $0.18
    • 10 $0.109
    • 100 $0.18
    • 1000 $0.04323
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    RN2112,LF(CT Digi-Reel 3,000 1
    • 1 $0.18
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    • 1000 $0.04323
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    RN2112,LF(CT Reel 3,000 3,000
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    Mouser Electronics RN2112,LF(CT
    • 1 $0.12
    • 10 $0.081
    • 100 $0.042
    • 1000 $0.037
    • 10000 $0.023
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    Visual Communications Company 45RN-2112T3

    125V GRN NEON 3 16"TAB
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    DigiKey 45RN-2112T3 Bag 76 1
    • 1 $11.33
    • 10 $8.213
    • 100 $11.33
    • 1000 $5.61964
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    Mouser Electronics 45RN-2112T3 500
    • 1 $11.08
    • 10 $8.21
    • 100 $6.98
    • 1000 $5.61
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    Toshiba America Electronic Components RN2112MFV,L3F

    TRANS PREBIAS PNP 50V 0.1A VESM
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    DigiKey RN2112MFV,L3F Reel 8,000
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    RN2112MFV,L3F Cut Tape 1
    • 1 $0.15
    • 10 $0.093
    • 100 $0.15
    • 1000 $0.03656
    • 10000 $0.03222
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    RN2112MFV,L3F Digi-Reel 1
    • 1 $0.15
    • 10 $0.093
    • 100 $0.15
    • 1000 $0.03656
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    Mouser Electronics RN2112MFV,L3F
    • 1 $0.1
    • 10 $0.069
    • 100 $0.035
    • 1000 $0.028
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    Find more RN2112 price and stock on Findchips.com

    RN2112 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN2112 Toshiba PNP transistor Original PDF
    RN2112 Toshiba Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Original PDF
    RN2112 Toshiba Japanese - Transistors Original PDF
    RN2112,LF(CT Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 50V 0.1W SSM Original PDF
    RN2112ACT Toshiba Transistors Original PDF
    RN2112ACT Toshiba Japanese - Transistors Original PDF
    RN2112ACT Toshiba RN2112 - TRANSISTOR 80 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN2112ACT(TPL3) Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRAN PNP CST3 50V 100A Original PDF
    RN2112CT Toshiba Transistors Original PDF
    RN2112CT Toshiba Japanese - Transistors Original PDF
    RN2112CT Toshiba RN2112 - TRANSISTOR 50 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN2112CT(TPL3) Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRAN PNP CST3 -20V -50A Original PDF
    RN2112F Toshiba PNP transistor Original PDF
    RN2112F Toshiba RN2112 - TRANSISTOR SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN2112FS Toshiba Original PDF
    RN2112FT Toshiba Original PDF
    RN2112FT Toshiba RN2112 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP General Purpose Small Signal Original PDF
    RN2112FV Toshiba Original PDF
    RN2112MFV Toshiba Transistors Original PDF
    RN2112MFV Toshiba Japanese - Transistors Original PDF

    RN2112 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RN1112ACT

    Abstract: RN1113ACT RN2112ACT RN2113ACT
    Text: RN2112ACT,RN2113ACT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112ACT,RN2113ACT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		PDF RN2112ACT RN2113ACT RN1112ACT, RN1113ACT RN1112ACT RN1113ACT RN2113ACT

    RN1112FT

    Abstract: RN1113FT RN2112FT RN2113FT
    Text: RN2112FT,RN2113FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112FT, RN2113FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original     		PDF RN2112FT RN2113FT RN2112FT, RN1112FT, RN1113FT RN2112FT RN1112FT RN1113FT RN2113FT

    RN1113F

    Abstract: RN2112F RN2113F RN1112F
    Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original     		PDF RN2112F RN2113F RN1112F, RN1113F RN1113F RN2113F RN1112F

    RN1112F

    Abstract: RN1113F RN2112F RN2113F
    Text: RN2112F,RN2113F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112F,RN2113F ○ スイッチング用 ○ インバータ回路 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm


    Original     		PDF RN2112F RN2113F RN1112FRN1113F RN2112F RN1112F RN1113F RN2113F

    RN1112FS

    Abstract: RN1113FS RN2112FS RN2113FS
    Text: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enables the manufacture of ever more


    Original     		PDF RN2112FS RN2113FS RN2112FS, RN1112FS, RN1113FS RN1112FS RN1113FS RN2113FS

    Untitled

    Abstract: No abstract text available
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV and RN2113MFV


    Original     		PDF RN1112MFV RN1113MFV RN1112MFV, RN2112MFV RN2113MFVmitation,

    Untitled

    Abstract: No abstract text available
    Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV, RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z A wide range of resistor values is available for use in various circuits.


    Original     		PDF RN2112MFV RN2113MFV RN2112MFV, RN1112MFV RN1113MFV

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV
    Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications A wide range of resistor values is available for use in various circuits.


    Original     		PDF RN2112MFV RN2113MFV RN1112MFV RN1113MFV RN1113MFV RN2113MFV

    RN1112FS

    Abstract: RN1113FS RN2112FS RN2113FS
    Text: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.2±0.05 0.15±0.05 Equivalent Circuit and Bias Resistor Values


    Original     		PDF RN2112FS RN2113FS RN2112FS, RN1112FS, RN1113FS RN1112FS RN1113FS RN2113FS

    RN1112FT

    Abstract: RN1113FT RN2112FT RN2113FT
    Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original     		PDF RN2112FT RN2113FT RN1112FT, RN1113FT RN1112FT RN1113FT RN2113FT

    toshiba inverter

    Abstract: RN1112FV RN1113FV RN2112FV RN2113FV
    Text: RN2112FV,RN2113FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112FV, RN2113FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm 0.22±0.05 Simplified circuit design Reduced quantity of parts and manufacturing process


    Original     		PDF RN2112FV RN2113FV RN2112FV, RN1112FV, RN1113FV toshiba inverter RN1112FV RN1113FV RN2113FV

    RN1112F

    Abstract: RN1113F RN2112F RN2113F
    Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF RN2112F RN2113F RN1112F, RN1113F RN2112F RN1112F RN1113F RN2113F

    Untitled

    Abstract: No abstract text available
    Text: RN2112,RN2113 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112,RN2113 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process


    Original     		PDF RN2112 RN2113 RN1112, RN1113 RN2112

    Untitled

    Abstract: No abstract text available
    Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original     		PDF RN2112F RN2113F RN1112F, RN1113F

    RN2112FT

    Abstract: RN1112FT RN1113FT RN2113FT
    Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original     		PDF RN2112FT RN2113FT RN1112FT, RN1113FT RN1112FT RN1113FT RN2113FT

    Untitled

    Abstract: No abstract text available
    Text: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FS,RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enable the manufacture of ever more


    Original     		PDF RN2112FS RN2113FS RN1112FS, RN1113FS

    RN1112

    Abstract: RN1113 RN2112 RN2113
    Text: RN2112,RN2113 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112,RN2113 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF RN2112 RN2113 RN1112, RN1113 RN1112 RN1113 RN2113

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN2112ACT Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single


    Original     		PDF RN2112ACT RN1112ACT 16-Apr-09

    Untitled

    Abstract: No abstract text available
    Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process


    Original     		PDF RN2112F RN2113F RN1112F, RN1113F RN2112F

    RN1112

    Abstract: RN1113 RN2112 RN2113
    Text: RN2112,RN2113 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112, RN2113 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z Built-in bias resistors z Simplified circuit design z Fewer parts and simplified manufacturing process


    Original     		PDF RN2112 RN2113 RN2112, RN1112, RN1113 RN1112 RN1113 RN2113

    ic 2113

    Abstract: No abstract text available
    Text: RN2112,2113 RN2112 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 03 With. Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process Complementary to RN1112, RN1113


    OCR Scan     		PDF RN2112 RN2112) RN1112, RN1113 RN2112 RN2113 ic 2113

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A RN2112,RN2113 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2112, RN2113 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 0.8 ± 0.1 With Built-in Bias Resistors


    OCR Scan     		PDF RN2112 RN2113 RN2112, RN1112, RN1113 RN2112

    Untitled

    Abstract: No abstract text available
    Text: RN2112F,RN2113F T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2112F, RN2113F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design


    OCR Scan     		PDF RN2112F RN2113F RN2112F, RN1112F, RN1113F RN2112F

    Untitled

    Abstract: No abstract text available
    Text: RN2112F,RN2113F T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS R N'm 7 1 1 7 F g R N'm 7 1 1 3 F • m■ ■ ■ m■ ■ ■ w ■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors


    OCR Scan     		PDF RN2112F RN2113F RN1112F, RN1113F RN2112F