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    COMPLEMENTARY MOSFET SOT89 Search Results

    COMPLEMENTARY MOSFET SOT89 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    COMPLEMENTARY MOSFET SOT89 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DMG1012

    Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
    Text: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS


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    A1103-04, DMG1012 ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8 PDF

    complementary MOSFET TO252

    Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
    Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and


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    D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4 PDF

    sso8 package

    Abstract: MOSFET P SOT-23 BUZ350 BS0615NV BUZ345 SOT323 MOSFET P tda 2850 n-channel 250V power mosfet smd buz341 BSS138N
    Text: L o w Vo l t a g e I C s – D i s c r e t e s : O p t i M O S , O p t i M O S ® 2 Pow e r Ma n a g e m e n t & Su p p l y : D C / D C Se l e c t i o n Gu i d e w w w. i n f i n e o n . c o m / p o w e r Never stop thinking. Introduction DC/DC CONVERSION plays a critical role in todays’ applications such as


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    B152-H8203-X-X-7600 sso8 package MOSFET P SOT-23 BUZ350 BS0615NV BUZ345 SOT323 MOSFET P tda 2850 n-channel 250V power mosfet smd buz341 BSS138N PDF

    smd code marking NEC

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
    Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part


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    G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP PDF

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


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    O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G PDF

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


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    B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book PDF

    MOSFET P-channel SOT-23

    Abstract: P-Channel MOSFET 12V SOT 23 sot-23 P-Channel MOSFET ultrasound an-H53 MOSFET P channel SOT-23 p-channel mosfet complementary MOSFET sot89 K6 12V TN2524
    Text: Selector Guide Ultrasound MOSFETs, Arrays and Drivers Ultrasound MOSFETs CISS VGS TH (Ω) typ (pF) 250 3.5 105 0.8 (min) TN2524 240 6.0 65 2.0 3-Lead SOT-89 (N8) TN2640 400 5.0 180 2.0 3-Lead TO-92 (N3) BVDSS RDS(ON) (V) TN2425 Device Package Options max


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    TN2524 OT-89 TN2640 TN2425 OT-23 TN5325 TP2424 MOSFET P-channel SOT-23 P-Channel MOSFET 12V SOT 23 sot-23 P-Channel MOSFET ultrasound an-H53 MOSFET P channel SOT-23 p-channel mosfet complementary MOSFET sot89 K6 12V TN2524 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIO 4468 Why Diodes - Bipolar2 final _- 09/10/2014 01:12 Page 1 WHY DIODES – BIPOLAR2 Why DIODES? Bipolar Transistors World Class Performance Broad Portfolio to Cover Application Needs Bipolar Advantages Technology Full turn-on with low VBE < 1V allows switching


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    DFN0606 De00V O251/2; OT223 PDF

    TC8220

    Abstract: sot-23 P-Channel MOSFET ultrasound MOSFET SOT-89 SOT-89 TN2524 TN2425 TC1550 TC2320 TC6215
    Text: Selector Guide Ultrasound MOSFETs Ultrasound MOSFETs, Arrays and Drivers Device BVDSS V RDS(ON) (Ω) CISS (typ pF) VGS(TH) (max V) Package Options TN2425 250 3.5 105 0.8 (min) TN2524 240 6.0 65 2.0 3-Lead SOT-89 (N8) TN2640 400 5.0 180 2.0 3-Lead TO-92 (N3)


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    TN2425 TN2524 OT-89 TN2640 OT-23 TN5325 TP2424 TC8220 sot-23 P-Channel MOSFET ultrasound MOSFET SOT-89 SOT-89 TN2524 TN2425 TC1550 TC2320 TC6215 PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    gyrator

    Abstract: FMMT458 DIODE z1 MOSFET sot23-6 z1 sot23 ZVN4525 Z1 SOT89 ZVN4525E6 ZVN4525G ZVN4525Z
    Text: Design Note 60 Issue 1 May 2001 Zetex High Voltage MOSFETS in Call Router Circuits A router is a device that receives data from a telephone line and decides which route the data should be sent. Routers are used extensively in computer networks. They are increasingly being


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    ZVN4525G OT223 ZVN4525Z ZVN4525E6 OT23-6 ZVP4525G ZVP4525Z ZVP4525E6 gyrator FMMT458 DIODE z1 MOSFET sot23-6 z1 sot23 ZVN4525 Z1 SOT89 ZVN4525E6 ZVN4525G ZVN4525Z PDF

    JFET TRANSISTOR REPLACEMENT GUIDE j201

    Abstract: J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET
    Text: LLC 2002 Short Form Catalog ANALOG SOLUTIONS: Amplifiers & Buffers Power Management MOSFETs High Speed Lateral & Vertical DMOS Switches & MOSFETs JFETs MOSFET Drivers Custom Solutions Calogic LLC, 237 Whitney Place, Fremont, CA 94539 • http://www.calogic.net


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    OT-23 JFET TRANSISTOR REPLACEMENT GUIDE j201 J201 spice J108 SOT-23 FET DATASHEET OF TRANSISTOR 2N5485 JFET TRANSISTOR REPLACEMENT GUIDE Direct replacement to LH0033 FET equivalent of 2N4352 2N4352 FET EQUIVALENT s0 sot-23 mosfet U402 N CHANNEL FET PDF

    NEC 10F triac

    Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
    Text: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2


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    G10748EJDV0SG00 NEC 10F triac 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FCX491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • V BR CEO > 40V High current capability IC = 1A Low saturation voltage VCE(sat) < 500mV @ 1A


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    FCX491A 500mV FCX591A J-STD-020 FCX491ATA FCX491A-7 DS33055 PDF

    Diodes Incorporated 17-33

    Abstract: DS-33010 complementary MOSFET sot89 BCX6825TA
    Text: A Product Line of Diodes Incorporated BCX6825 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 20V High current capability Maximum Continuous Current IC = 1A Low saturation voltage VCE sat < 500mV @ 1A


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    BCX6825 500mV BCX69 AEC-Q101 J-STD-020 BCX6825 DS33010 Diodes Incorporated 17-33 DS-33010 complementary MOSFET sot89 BCX6825TA PDF

    FCX591ATA

    Abstract: Diodes Incorporated 17-33 FCX491A FCX591A 17-33 sot89 DIODES Inc diodes marking
    Text: A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • V BR CEO > -40V High current capability IC = -1A Low saturation voltage VCE(sat) < -500mV @ -1A


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    FCX591A -500mV FCX491A J-STD-020 FCX591ATA FCX591A-7 DS33062 FCX591ATA Diodes Incorporated 17-33 FCX491A FCX591A 17-33 sot89 DIODES Inc diodes marking PDF

    Diodes Incorporated 17-33

    Abstract: FCX491A all diodes ratings FCX491ATA FCX591A MARKING N2 DIODES incorporated
    Text: A Product Line of Diodes Incorporated FCX491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • V BR CEO > 40V High current capability IC = 1A Low saturation voltage VCE(sat) < 500mV @ 1A


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    FCX491A 500mV FCX591A J-STD-020 FCX491ATA FCX491A-7 DS33055 Diodes Incorporated 17-33 FCX491A all diodes ratings FCX491ATA FCX591A MARKING N2 DIODES incorporated PDF

    TC54

    Abstract: MTP3055EL MC34164P3 equivalent TC54VN4302EZB MC34064P5 tc54vn43 MC33164P-5 MC34064P-5 MC34164P-3 MC34164P-5
    Text: APPLICATION NOTE 2 USING THE TELCOM TC54 VOLTAGE DETECTOR USING THE TELCOM TC54 VOLTAGE DETECTOR AN-2 INTRODUCTION OPERATION TelCom's TC54 series of voltage detectors are designed to supersede a variety of discrete comparator circuits and bipolar technology voltage detectors.


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    100mV OT-23 OT-89 TC54Vgnal TC54VN, TC54Vx TC54 MTP3055EL MC34164P3 equivalent TC54VN4302EZB MC34064P5 tc54vn43 MC33164P-5 MC34064P-5 MC34164P-3 MC34164P-5 PDF

    Ee 19c transformer

    Abstract: 78L05 SMD SOT89 PACKAGE 78L05 SMD AN1645 EE - 19c TRANSFORMER SMD d5 sot89 EE 19B transformer 78L05 SMD PACKAGE STSR2P AN-1645
    Text: AN1645 APPLICATION NOTE STSR2P/STSR2PM SIMPLIFIES IMPLEMENTATION OF SYNCHRONOUS RECTIFIERS IN FORWARD CONVERTER F. Librizzi - F. Lentini 1. ABSTRACT This paper describes the functionality and the operation of the STSR2P device used as the secondary synchronous rectifier driver in Forward topology switched mode power supplies. A schematic and layout


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    AN1645 100nF Ee 19c transformer 78L05 SMD SOT89 PACKAGE 78L05 SMD AN1645 EE - 19c TRANSFORMER SMD d5 sot89 EE 19B transformer 78L05 SMD PACKAGE STSR2P AN-1645 PDF

    FCX591A

    Abstract: FCX591ATA Diodes Incorporated 17-33 FCX491A 17-33 sot89
    Text: A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • BVCEO > -40V IC = -1A Continuous Collector Current Low saturation voltage VCE sat < -500mV @ -1A


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    FCX591A -500mV FCX491A AEC-Q101 J-STD-020 DS33062 FCX591A FCX591ATA Diodes Incorporated 17-33 FCX491A 17-33 sot89 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • BVCEO > -40V IC = -1A Continuous Collector Current Low saturation voltage VCE sat < -500mV @ -1A


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    FCX591A -500mV FCX491A AEC-Q101 J-STD-020 DS33062 PDF

    4422 mosfet

    Abstract: p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419
    Text: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


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    ZVP4525G OT223 OT23-6 ZVN4525G OT223 4422 mosfet p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419 PDF

    marking n52

    Abstract: marking N52 mosfet ZVN4525E6TA DSA0037389 ZVP4525E6 device marking N52 marking QG SOT23-6 MARKING TR SOT23-6 P MOSFET N52 marking sot223 device Marking
    Text: ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


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    ZVN4525E6 OT23-6 OT223 ZVP4525E6 OT23-6 marking n52 marking N52 mosfet ZVN4525E6TA DSA0037389 ZVP4525E6 device marking N52 marking QG SOT23-6 MARKING TR SOT23-6 P MOSFET N52 marking sot223 device Marking PDF

    supertex mosfet p-channel TO-220

    Abstract: low threshold mosfet p-channel TO-220 p-channel lateral diffused mos N-Channel Depletion-Mode MOSFET high voltage supertex dmos
    Text: M Supertex me. Product Nomenclature / Ordering Information The Supertex DMOS MOSFET family utilizes both vertical and lateral double diffused MOS processes, featuring: High drain-to-source voltage for direct interface to the outside world. • Enhancement-mode and depletion-mode devices available.


    OCR Scan
    O-220 SO-16 OT-23 O-243AA OT-89) SO-14 supertex mosfet p-channel TO-220 low threshold mosfet p-channel TO-220 p-channel lateral diffused mos N-Channel Depletion-Mode MOSFET high voltage supertex dmos PDF