CP083 Search Results

EMA112-CP083

Contextual Info: EMA112-CP083 0.5 – 3.0 GHz High Linearity Power MMIC ISSUED 11/27/2006 Features • • • • 0.5 – 3.0 Ghz Bandwidth 28.0dBm Typical Output Power at 1dB Compression 15.0 dB Typical Small Signal Gain Single Bias Supply Caution! ESD sensitive device.

EPA960CR-CP083

Contextual Info: EPA960CR-CP083 High Efficiency Heterojunction Power FET UPDATED 01/16/2006 FEATURES G1dB PAE ● P1dB All Dimensions in mil Tolerance: ± 3 mil Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS Ta = 25°C SYMBOL EPA • • • • • NON-HERMETIC SURFACE MOUNT

igd 001

Abstract: EFA240D-CP083
Contextual Info: EFA240D-CP083 Low Distortion GaAs Power FET UPDATED 06/13/2006 .096 .290±0.005 FEATURES • • • • • • 2X .065 ±.015 NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +30.5dBm OUTPUT POWER 17.0 dB TYPICAL POWER GAIN AT 2 GHz 0.5x2400 MICRON RECESSED “MUSHROOM” GATE

EPA480C-CP083

Contextual Info: Excelics EPA480C-CP083 PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +35.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 4800 MICRON RECESSED

EPA120D-CP083

Contextual Info: EPA120D-CP083 High Efficiency Heterojunction Power FET UPDATED 01/13/2006 FEATURES G1dB PAE ● P1dB All Dimensions in mil Tolerance: ± 3 mil Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS Ta = 25°C SYMBOL EPA • • • • • NON-HERMETIC SURFACE MOUNT

EPA960C-CP083

Contextual Info: Excelics EPA960C-CP083 PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +38.0dBm TYPICAL OUTPUT POWER 16.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 9600 MICRON RECESSED

EFA480C-CP083

Contextual Info: Excelics EFA480C-CP083 PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5dBm TYPICAL OUTPUT POWER 16.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE

EFA720AV-CP083

Contextual Info: EFA720AV-CP083 Low Distortion GaAs Power FET UPDATED 01/30/2006 FEATURES ● EFA • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5dBm OUTPUT POWER 17.0 dB TYPICAL POWER GAIN AT 2 GHz 0.5x4800 MICRON RECESSED “MUSHROOM” GATE

Contextual Info: EMA110-CP083 0.5 – 3.0 GHz High Linearity Power MMIC ISSUED 01/10/2007 Features • • • • 0.5 – 3.0 Ghz Bandwidth 26.5dBm Typical Output Power at 1dB Compression 11.0 dB Typical Small Signal Gain Single Bias Supply EMA 110 Caution! ESD sensitive device.

EFA960CR-CP083

Contextual Info: EFA960CR-CP083 Low Distortion GaAs Power FET UPDATED 05/19/2006 FEATURES • • • • • • 2X .065 ±.015 P1dB G1dB PAE .160 .010 MAX .075 .220 .200 .050 .008±0.001 All Dimensions in Inches Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS Ta = 25°C

EFA480C-CP083

Abstract: fet 721
Contextual Info: EFA480C-CP083 Low Distortion GaAs Power FET UPDATED 12/28/2004 FEATURES • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5 dBm OUTPUT POWER AT 1dB COMPRESSION 16.0 dB GAIN AT 2 GHz 0.5x4800 MICRON RECESSED “MUSHROOM” GATE

EFA960CR-CP083

Abstract: VP 1176
Contextual Info: EFA960CR-CP083 Low Distortion GaAs Power FET UPDATED 05/19/2006 FEATURES • • • • • • 2X .065 ±.015 P1dB G1dB PAE .160 .010 MAX .075 .220 .200 .050 .008±0.001 All Dimensions in Inches Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS Ta = 25°C

igd 001

Abstract: EPA240D-CP083
Contextual Info: EPA240D-CP083 High Efficiency Heterojunction Power FET UPDATED 07/19/2006 • • • • • • .096 .290±0.005 FEATURES NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +32.5 dBm OUTPUT POWER AT 1dB COMPRESSION 18.5 dB GAIN AT 2 GHz 0.5x2400 MICRON RECESSED “MUSHROOM” GATE

EFA960C-CP083

Contextual Info: Excelics EFA960C-CP083 PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +36.0dBm TYPICAL OUTPUT POWER 15.5dB TYPICAL POWER GAIN AT 2GHz 0.5 X 9600 MICRON RECESSED “MUSHROOM” GATE

EPA080A-100P

Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.

CP083

Contextual Info: EXCELICS SEMICONDUCTOR, INC. Packaged FET Equivalent Circuit Model Shown below is an approximate model for use with packaged FETs. The FET shown in the schematic can be replaced with the small signal or large signal model for the chip, including bond wire inductances. The element values shown