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    CPC3714 Search Results

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    CPC3714 Price and Stock

    IXYS Integrated Circuits Division CPC3714C

    MOSFET N-CH 350V SOT89
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    DigiKey CPC3714C Tube 200
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    Littelfuse Inc CPC3714CTR

    MOSFET N-CH 350V SOT89
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    DigiKey CPC3714CTR Reel 1,000
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    Arrow Electronics CPC3714CTR 1,000 23 Weeks 1,000
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    Newark CPC3714CTR Reel 1,000
    • 1 $0.494
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    RS CPC3714CTR Bulk 8 Weeks 1,000
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    IXYS Corporation CPC3714CTR

    MOSFETs N Ch Dep Mode FET 250V
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    Mouser Electronics CPC3714CTR
    • 1 $0.78
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    • 100 $0.561
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    TTI CPC3714CTR Reel 1,000
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    TME CPC3714CTR 1,000 1
    • 1 $0.997
    • 10 $0.647
    • 100 $0.522
    • 1000 $0.475
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    New Advantage Corporation CPC3714CTR 1,600 1
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    Others CPC3714CTR

    INSTOCK
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    Chip 1 Exchange CPC3714CTR 2,600
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    IXYS Integrated Circuits Division CPC3714CTR

    MOSFET DIS.240mA 350V N-CH SOT89 DEPLETION SMT
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    Ozdisan Elektronik CPC3714CTR 2,000
    • 1 $0.6954
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    • 100 $0.6954
    • 1000 $0.6047
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    CPC3714 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CPC3714C Clare N Channel Depletion Mode FET Original PDF
    CPC3714C IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH DEPLETION 350V SOT89 Original PDF
    CPC3714CTR IXYS Integrated Circuits MOSFET N-CH DEPLETION 350V SOT89 Original PDF

    CPC3714 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CPC3714 N-Channel Depletion-Mode FET PRELI M I N ARY BVDSX/ BVDGX 350VP RDS on (max) 14Ω IDSS (min) Package 240mA SOT-89 Features • • • • • • Offers Low RDS(on) at Cold Temperatures RDS(on 14Ω max. at 25ºC High Input Impedance High Breakdown Voltage: 350V


    Original
    PDF CPC3714 350VP 240mA OT-89 CPC3714 DS-CPC3714-R00B

    Untitled

    Abstract: No abstract text available
    Text: CPC3714 N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION V BR DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 350VP 14 240mA SOT-89 Features • • • • • • Offers Low RDS(on) at Cold Temperatures RDS(on) 14 max. at 25ºC High Input Impedance


    Original
    PDF CPC3714 350VP 240mA OT-89 CPC3714 DS-CPC3714-R01

    Untitled

    Abstract: No abstract text available
    Text: CPC3714 N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION PRELIMINARY V BR DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 350VP 14 240mA SOT-89 Features • • • • • • Offers Low RDS(on) at Cold Temperatures RDS(on) 14 max. at 25ºC


    Original
    PDF CPC3714 350VP 240mA OT-89 CPC3714 DS-CPC3714-R00E

    CPC3714

    Abstract: No abstract text available
    Text: CPC3714 350V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION V BR DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 350VP 14 240mA SOT-89 Features • • • • • • Offers Low RDS(on) at Cold Temperatures RDS(on) 14 max. at 25ºC High Input Impedance


    Original
    PDF CPC3714 350VP 240mA OT-89 CPC3714 DS-CPC3714-R02

    RY115

    Abstract: CPC3714C R00a D 4242 transistor
    Text: CPC3714C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 14Ω IDSS (min) Package 240mA SOT-89 Description The CPC3714C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original
    PDF CPC3714C 240mA OT-89 CPC3714C DS-CPC3714C-R00A RY115 R00a D 4242 transistor

    CPC3714C

    Abstract: J-STD-033
    Text: CPC3714 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ BVDGX 350VP RDS on (max) 14 IDSS (min) Package 240mA SOT-89 Features • • • • • • Offers Low RDS(on) at Cold Temperatures RDS(on 14 max. at 25ºC High Input Impedance High Breakdown Voltage: 350V


    Original
    PDF CPC3714 350VP 240mA OT-89 CPC3714 DS-CPC3714-R00B CPC3714C J-STD-033

    Untitled

    Abstract: No abstract text available
    Text: CPC3714 N-Channel Depletion-Mode FET PRELIMINARY V BR DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 350VP 14 240mA SOT-89 Features • • • • • • Offers Low RDS(on) at Cold Temperatures RDS(on) 14 max. at 25ºC High Input Impedance High Breakdown Voltage: 350V


    Original
    PDF CPC3714 350VP 240mA OT-89 CPC3714 DS-CPC3714-R00D

    IXEP1400

    Abstract: CPC1706 CPC1020N
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original
    PDF CH-2555 N1016, IXEP1400 CPC1706 CPC1020N

    LCA717

    Abstract: 0-10v to 4-20ma cpc9909 IX2127 PM1206 en50130-4 CPC1020 CPC1002N deutsch relays inc 35v, 1amp smps circuits
    Text: Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs, manufactures, and markets a wide variety of semiconductor devices. Clare’s wafer fabrication facility features a 600V BCDMOS process on a bonded-wafer, silicon-on-insulator, trench-isolated


    Original
    PDF MX887P MX844 12-Bit MX887D LCA717 0-10v to 4-20ma cpc9909 IX2127 PM1206 en50130-4 CPC1020 CPC1002N deutsch relays inc 35v, 1amp smps circuits

    cpc9909

    Abstract: 6-pin smps power control ic cpc1943 MXHV9910 0-10v to 4-20ma Line Driver SHDSL IX2127 CPC1230 opamps catalog deutsch relays inc
    Text: Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs, manufactures, and markets a wide variety of semiconductor devices. Clare’s wafer fabrication facility features a 600V BCDMOS process on a bonded-wafer, silicon-on-insulator, trench-isolated


    Original
    PDF MX887P MX844 12-Bit MX887D cpc9909 6-pin smps power control ic cpc1943 MXHV9910 0-10v to 4-20ma Line Driver SHDSL IX2127 CPC1230 opamps catalog deutsch relays inc

    IXEP1400

    Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original
    PDF CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    LBA716

    Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division


    Original
    PDF N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219

    A NEW GENERATION OF HIGH PERFORMANCE MOSFET DRIVERS FEATURES HIGH CURRENT, HIGH SPEED OUTPUTS

    Abstract: CPC1225N
    Text: 9  # #0 Clare 2009/2010 Product Catalog Semiconductor Products Complete data sheets are available for downloading at Clare’s website: http://www.clare.com Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs,


    Original
    PDF N1016, D-68623 CH-2555 A NEW GENERATION OF HIGH PERFORMANCE MOSFET DRIVERS FEATURES HIGH CURRENT, HIGH SPEED OUTPUTS CPC1225N