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    CQFJ 84 Search Results

    CQFJ 84 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CQFJ

    Abstract: CSOIC hbm 216 LA 7652 PE9354 PE97042 PE9701 PE9309 PE95420 PE9601
    Text: High-Reliability Products May 2010 Peregrine’s High-Reliability UltraCMOS RF IC Portfolio Expands TM New SPDT Switch, Ultra-low Phase Noise PLLs, DSA and Prescalers Lead the Industry Peregrine Semiconductor’s recent advancements on UltraCMOS silicon-on-sapphire technology have enabled


    Original     		Tower10B-6 CQFJ CSOIC hbm 216 LA 7652 PE9354 PE97042 PE9701 PE9309 PE95420 PE9601 PDF

    QFN 4x4 mm 20L

    Abstract: QUALCOMM QFN CQFJ qualcomm temperature spec rf spdt mhz dbm PE9308 CQFj 44 GSM qualcomm PE3336 PE3341
    Text: 2007 Second Edition Product Selection Guide Changing how you design RF. Forever. Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for


    Original     		product-3940 10B-6 QFN 4x4 mm 20L QUALCOMM QFN CQFJ qualcomm temperature spec rf spdt mhz dbm PE9308 CQFj 44 GSM qualcomm PE3336 PE3341 PDF

    PE42692

    Abstract: F QFN 3X3 PE42xx SPDT stacked FET PE42552 03 07 qfn 3x3 flip flap PE3336 PE3341 PE4230
    Text: 2009 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for


    Original     		high-re3940 10B-6 PE42692 F QFN 3X3 PE42xx SPDT stacked FET PE42552 03 07 qfn 3x3 flip flap PE3336 PE3341 PE4230 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE83336 3000 MHz UltraCMOS Integer-N PLL For Low Phase Noise Applications Military Operating Temperature Range Product Description Peregrine’s PE83336 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior


    Original     		PE83336 PE83336 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE83336 3000 MHz UltraCMOS Integer-N PLL For Low Phase Noise Applications Military Operating Temperature Range Product Description Peregrine’s PE83336 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior


    Original     		PE83336 PE83336 PDF

    PE33632

    Abstract: PE33362 PE33632 die pe33382 PE42692 PE33362 die PE42510A1 PE4340 PE33631 PE42694
    Text: 2010 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS : The Green RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for


    Original     		and940 10B-6 PE33632 PE33362 PE33632 die pe33382 PE42692 PE33362 die PE42510A1 PE4340 PE33631 PE42694 PDF

    qualcomm 7500

    Abstract: rf spdt mhz dbm 32 pins qfn 5x5 footprint E k m QFN 3X3 F QFN 3X3 PE42692 QUALCOMM Reference design QUALCOMM QFN GSM qualcomm PE3336
    Text: 2008 Product Selection Guide Changing how you design RF. Forever. Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for


    Original     		10B-6 qualcomm 7500 rf spdt mhz dbm 32 pins qfn 5x5 footprint E k m QFN 3X3 F QFN 3X3 PE42692 QUALCOMM Reference design QUALCOMM QFN GSM qualcomm PE3336 PDF

    CQFj 44

    Abstract: PE83336
    Text: Product Specification PE83336 3000 MHz UltraCMOS Integer-N PLL For Low Phase Noise Applications Military Operating Temperature Range Product Description Peregrine’s PE83336 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior


    Original     		PE83336 PE83336 PE3336 CQFj 44 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification PE83336 3000 MHz UltraCMOS Integer-N PLL For Low Phase Noise Applications Military Operating Temperature Range Product Description Peregrine’s PE83336 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior


    Original     		PE83336 PE83336 PDF

    Untitled

    Abstract: No abstract text available
    Text: WS1M32V-XG3X HI-RELIABILITY PRODUCT 1Mx32 SRAM 3.3V MODULE ADVANCED* FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as


    Original     		WS1M32V-XG3X 1Mx32 WS1M32V-XG3X 512Kx32, 2Mx16 I/O31 I/O30 I/O29 I/O28 PDF

    WS1M32V-XG3X

    Abstract: No abstract text available
    Text: WS1M32V-XG3X White Electronic Designs PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins


    Original     		WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O31 I/O30 I/O29 I/O28 PDF

    3d plus

    Abstract: CQFJ 84 A12 marking airborn CQFJ 3DSD1280-323H 3D marking
    Text: PRELIMINARY 1.28 Gbit SDRAM ELECTRONICS 3DSD1280-323H 1.28 GBit Synchronous DRAM - Hermetic package Features General Description Organized as 40M x 32-bit. Single +3.3V ±0.3V power supply Two stacks of ten 64 MBit SDRAM mounted on ceramic hermetic package


    Original     		3DSD1280-323H 32-bit. 100nF MIL-STD-883D /883D-S 3DSD1280-323H/PROTO 3DSD1280-323H/883D-S F-78532 3DFP-0008 3d plus CQFJ 84 A12 marking airborn CQFJ 3DSD1280-323H 3D marking PDF

    WS1M32V-XG3X

    Abstract: No abstract text available
    Text: WS1M32V-XG3X HI-RELIABILITY PRODUCT 1Mx32 SRAM 3.3V MODULE PRELIMINARY* FEATURES n Access Times of 17, 20, 25ns n 3.3 Volt Power Supply n 84 lead, 28mm CQFP, Package 511 n Low Power CMOS n Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8


    Original     		WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O31 I/O30 I/O29 I/O28 PDF

    511S

    Abstract: WS1M32-XG3X ah55
    Text: WS1M32-XG3X 1Mx32 SRAM MODULE PRELIMINARY* FEATURES • Access Time of 70, 85, 100, 120ns ■ TTL Compatible Inputs and Outputs ■ 84 lead, 28mm CQFP, Package 511 ■ 5 Volt Power Supply ■ Organized as two banks of 512Kx32, User Configurable as 1Mx16 or 2Mx8


    Original     		WS1M32-XG3X 1Mx32 120ns 512Kx32, 1Mx16 I/O31 I/O30 I/O29 I/O28 511S WS1M32-XG3X ah55 PDF

    WS1M32V-XG3X

    Abstract: No abstract text available
    Text: WS1M32V-XG3X HI-RELIABILITY PRODUCT 1Mx32 SRAM 3.3V MODULE PRELIMINARY* FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as


    Original     		WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O31 I/O30 I/O29 I/O28 PDF

    WS1M32-XG3X

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES „ Access Times of 17, 20, 25ns „ Low Power CMOS „ Packaging „ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation „ Weight • 84 lead, 28mm CQFP, Package 511 „ Organized as two banks of 512Kx32, User


    Original     		WS1M32-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32-XG3X I/O31 I/O30 I/O29 I/O28 PDF

    WS1M32-XG3X

    Abstract: No abstract text available
    Text: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as


    Original     		WS1M32-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32-XG3X I/O31 I/O30 I/O29 I/O28 PDF

    WS1M32V-XG3X

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins


    Original     		WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O31 I/O30 I/O29 I/O28 PDF

    Untitled

    Abstract: No abstract text available
    Text: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES  Access Times of 17, 20, 25ns  3.3V Power Supply  84 lead, 28mm CQFP, Package 511  Low Power CMOS  Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8


    Original     		WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O0-31 A0-18 PDF

    WS1M32-XG3X

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M32-XG3X PRELIMINARY* 1Mx32 SRAM MODULE FEATURES Access Time of 70, 85, 100, 120ns 5V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 1Mx16 or 2Mx8 Weight - WS1M32-XG3X - 20 grams typical


    Original     		WS1M32-XG3X 1Mx32 120ns 512Kx32, 1Mx16 WS1M32-XG3X I/O31 I/O30 I/O29 PDF

    Untitled

    Abstract: No abstract text available
    Text: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES  Access Times of 17, 20, 25ns  3.3V Power Supply  84 lead, 28mm CQFP, Package 511  Low Power CMOS  Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8


    Original     		WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O0-31 A0-18 PDF

    Untitled

    Abstract: No abstract text available
    Text: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES  Access Times of 17, 20, 25ns  5V Power Supply  Packaging  Low Power CMOS  Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation • 84 lead, 28mm CQFP, Package 511


    Original     		WS1M32-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32-XG3X I/O0-31 A0-18 I/O31 I/O30 PDF

    Untitled

    Abstract: No abstract text available
    Text: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES  Access Time of 70, 85, 100, 120ns  5V Power Supply  84 lead, 28mm CQFP, Package 511  Low Power CMOS  Organized as two banks of 512Kx32, User Configurable as 1Mx16 or 2Mx8  Weight - WS1M32-XG3X - 20 grams typical


    Original     		WS1M32-XG3X 1Mx32 120ns 512Kx32, 1Mx16 WS1M32-XG3X I/O0-31 A0-18 I/O31 PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M32-XG3X PRELIMINARY* 1Mx32 SRAM MODULE FEATURES Access Time of 70, 85, 100, 120ns 5V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 1Mx16 or 2Mx8 Weight - WS1M32-XG3X - 20 grams typical


    Original     		1Mx32 120ns 512Kx32, 1Mx16 WS1M32-XG3X WS1M32-XG3X I/O31 I/O30 I/O29 PDF