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    2MX16 Price and Stock

    Microchip Technology Inc A42MX16-VQG100I

    IC FPGA 83 I/O 100VQFP
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    DigiKey A42MX16-VQG100I Tray 213 1
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    Mouser Electronics A42MX16-VQG100I 23
    • 1 $244.93
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    Newark A42MX16-VQG100I Bulk 90
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    Ameya Holding Limited A42MX16-VQG100I 117
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    Avnet Silica A42MX16-VQG100I 14 Weeks 90
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    EBV Elektronik A42MX16-VQG100I 13 Weeks 90
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    Microchip Technology Inc A42MX16-VQG100M

    IC FPGA 83 I/O 100VQFP
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    DigiKey A42MX16-VQG100M Tray 185 1
    • 1 $885.66
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    Newark A42MX16-VQG100M Bulk 90
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    Master Electronics A42MX16-VQG100M
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    • 100 $780
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    Microchip Technology Inc A42MX16-VQG100

    IC FPGA 83 I/O 100VQFP
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    DigiKey A42MX16-VQG100 Tray 95 1
    • 1 $204.7
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    Microchip Technology Inc A42MX16-PQG100I

    IC FPGA 83 I/O 100QFP
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    DigiKey A42MX16-PQG100I Tray 86 1
    • 1 $240.32
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    Mouser Electronics A42MX16-PQG100I
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    Microchip Technology Inc A42MX16-TQG176I

    IC FPGA 140 I/O 176TQFP
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    DigiKey A42MX16-TQG176I Tray 80 1
    • 1 $279.72
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    Avnet Americas A42MX16-TQG176I Tray 12 Weeks 40
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    Mouser Electronics A42MX16-TQG176I 40
    • 1 $276.06
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    Newark A42MX16-TQG176I Bulk 40
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    NAC A42MX16-TQG176I Tray 40
    • 1 $279.7
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    • 100 $257.62
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    Avnet Silica A42MX16-TQG176I 14 Weeks 40
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    EBV Elektronik A42MX16-TQG176I 13 Weeks 40
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    Master Electronics A42MX16-TQG176I
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    2MX16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CMS3216LAF

    Abstract: CMS3216LAG CMS3216LAH
    Text: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


    Original     		CMS3216LAx-75xx 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH PDF

    K1S3216B1C-FI70

    Abstract: K1S3216B1C K1S3216B1C-I
    Text: Preliminary K1S3216B1C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 16, 2003 Advanced 0.1 Revised - Changed Package Type from 48 TBGA into 48 FBGA 6.0 x 8.0


    Original     		K1S3216B1C 2Mx16 100uA 55/Typ. 35/Typ. K1S3216B1C-FI70 K1S3216B1C K1S3216B1C-I PDF

    WS1M32V-XG3X

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins


    Original     		WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O31 I/O30 I/O29 I/O28 PDF

    MASK ROM 32M PROGRAM

    Abstract: K3N6C4000E-DC mask rom A2034
    Text: K3N6C4000E-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.)


    Original     		K3N6C4000E-DC 32M-Bit 2Mx16) 152x16 100ns 120ns 100pF 42-DIP-600 K3N6C4000E-DC MASK ROM 32M PROGRAM mask rom A2034 PDF

    A94-10

    Abstract: 4000E
    Text: K3N6V U 4000E-DC CMOS MASK ROM 32M-Bit (2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/ single +3.3V


    Original     		4000E-DC 32M-Bit 2Mx16) 152x16 100ns 120ns 100pF A94-10 4000E PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance K1S321615C UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Initial Draft Draft Date Remark April 18, 2003 Advanced The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		K1S321615C 2Mx16 K1S321615C 55/Typ. 35/Typ. PDF

    Untitled

    Abstract: No abstract text available
    Text: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES  Access Times of 17, 20, 25ns  3.3V Power Supply  84 lead, 28mm CQFP, Package 511  Low Power CMOS  Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8


    Original     		WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O0-31 A0-18 PDF

    SAMSUNG MCP

    Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
    Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary


    Original     		K5A3x40YT 4Mx8/2Mx16) 512Kx8/256Kx16) 512tRDR 69-Ball 08MAX SAMSUNG MCP samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5 PDF

    CMS3216LAF

    Abstract: CMS3216LAG CMS3216LAH
    Text: CMS3216LAx-75Ex 32M 2Mx16 Low Power SDRAM Revision 0.1 November, 2005 Rev0.1, Nov. 2005 CMS3216LAx-75Ex Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions


    Original     		CMS3216LAx-75Ex 2Mx16) CMS3216LAF CMS3216LAG CMS3216LAH PDF

    WS1M32V-XG3X

    Abstract: No abstract text available
    Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins


    Original     		WS1M32V-XG3X 1Mx32 512Kx32, 2Mx16 WS1M32V-XG3X I/O31 I/O30 I/O29 I/O28 PDF

    WEDF1M32B-XXX5

    Abstract: WEDF1M32B-XG2TX5 WEDF1M32B-XHX5 1m 0880
    Text: White Electronic Designs WEDF1M32B-XXX5 ADVANCED* 1Mx32 5V Flash Module FEATURES Access Times of 70, 90, 120ns Packaging: Organized as 1Mx32, user configurable as 2Mx16 or 4Mx8. • 66 pin, PGA Type, 1.185” square, Hermetic Ceramic HIP Package 401 Commercial, Industrial and Military Temperature


    Original     		WEDF1M32B-XXX5 1Mx32 120ns 1Mx32, 2Mx16 16KByte WEDF1M32B-XG2TX5 WEDF1M32B-XHX5 32KByte WEDF1M32B-XXX5 1m 0880 PDF

    jedec ms-024

    Abstract: MS-024-FA ms024 WED416S8030A-S 2Mx16bit
    Text: White Electronic Designs WED416S8030A-SI 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The WED416S8030AxxSI is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097, 152 words x 16 bits. Synchronous design allows


    Original     		WED416S8030A-SI 2Mx16x WED416S8030AxxSI 100MHz) 83MHz) jedec ms-024 MS-024-FA ms024 WED416S8030A-S 2Mx16bit PDF

    mask rom

    Abstract: No abstract text available
    Text: KM23V32005D E TY/KM23S32005D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V/3.0V Operation : 100/30ns(Max.)


    Original     		KM23V32005D TY/KM23S32005D 32M-Bit /2Mx16) 304x8 152x16 100/30ns 150/50ns KM23S32005D mask rom PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23V32000D E TY/KM23S32000D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.)


    Original     		KM23V32000D TY/KM23S32000D 32M-Bit /2Mx16) 304x8 152x16 100ns 150ns KM23S32000D PDF

    Untitled

    Abstract: No abstract text available
    Text: K3N6V U 1000D-YC(E)/K3N6S1000D-YC(E) CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.)


    Original     		1000D-YC /K3N6S1000D-YC 32M-Bit /2Mx16) 304x8 152x16 100ns 150ns K3N6S1000D-YC PDF

    K3P6C2000B-SC

    Abstract: No abstract text available
    Text: K3P6C2000B-SC CMOS MASK ROM 32M-Bit 2Mx16 /1Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 16(word mode) 1,048,576 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 double words/ 8 words page access


    Original     		K3P6C2000B-SC 32M-Bit 2Mx16 /1Mx32) 100ns 150mA 70-SSOP-500 K3P6C2000B-SC 152x16 PDF

    Untitled

    Abstract: No abstract text available
    Text: K3P6V1000B-GC CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) • 8 words / 16 bytes page access


    Original     		K3P6V1000B-GC 32M-Bit /2Mx16) 304x8 152x16 100ns 44-SOP-600 K3P6V1000B-GC PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C32205BSG CMOS MASK ROM 32M-Bit 2Mx16 /1Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 16(word mode) 1,048,576 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 double words/ 8 words page access


    Original     		KM23C32205BSG 32M-Bit 2Mx16 /1Mx32) 100ns 150mA 70-SSOP-500 KM23C32205BSG 152x16 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C32005BT CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 8 words/ 16 bytes page access


    Original     		KM23C32005BT 32M-Bit /2Mx16) 304x8 152x16 100ns 150mA 44-TSOP2-400 KM23C32005BT PDF

    Untitled

    Abstract: No abstract text available
    Text: 2Mx16, 20 - 45ns, STACK 30A129-08 A 32 Megabit High Speed CMOS SRAM 2MX16MKn3 DESCRIPTION: The 2MX16MKn3 High Speed SRAM ‘’STACK’’ modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC .


    Original     		2Mx16, 30A129-08 DPS2MX16MKn3 DPS2MX16MKn3 32-Megabits 500mV PDF

    K1S321615A-E

    Abstract: No abstract text available
    Text: K1S321615A UtRAM Document Title 2Mx16 bit Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target June 12, 2001 Advance 0.1 Revise October 22, 2001 Preliminary March 11, 2002 Final - Removed low power product K1S321615A-EN85


    Original     		K1S321615A 2Mx16 K1S321615A-EN85) 100uA 48-TBGA LIM-011025 K1S321615A-E PDF

    F2M1

    Abstract: No abstract text available
    Text: !. es 2Mx16 5V FLASH MODULE W F 2 M 1 6 -X X X 5 ADVANCED1 FEATURES • Access Time of 9 0 ,1 2 0 ,150ns Low Po w er C M O S ■ Packaging: Data Polling and Toggle Bit feature for detection of program or erase cycle completion. • 66-pin, PGA Type, 1.185 inch square, Herm etic Ceramic


    OCR Scan     		2Mx16 150ns 66-pin, F2M1 PDF

    Untitled

    Abstract: No abstract text available
    Text: a WF1M 32B-XXX5 WHITE /MICROELECTRONICS 1Mx325V/12V FLASH MODULE PRELIMINAR/* FEATURES • Access Times of 100,120ns Organized as 1Mx32, user configurable as 2Mx16 or4Mx8. ■ Commercial, Industrial and Military Temperature Ranges Packaging: • 66-pin, PGA Type, 1.185 inch square, Hermetic


    OCR Scan     		32B-XXX5 1Mx325V/12V 120ns 1Mx32, 2Mx16 V/12V 32B-XG2TX5 32B-XHX5 66-pin, 5/12V) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM23V32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time 3.3V Operation : 120ns(Max.) 3.0V Operation : 150ns(Max.)


    OCR Scan     		KM23V32000C 32M-Bit /2Mx16) 304x8 152x16 120ns 150ns 30/25mA 44-TSOP2-400 PDF