LP 8029
Abstract: DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N CQY37N cqy 17
Text: CQY 37 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
|
Original
|
PDF
|
CQY37N
BPW17N
D-74025
LP 8029
DIN 7990
CQY 26
7922 diode
cqy 35 n
BPW17N
cqy 17
|
LP 8029
Abstract: CQY 24 DIN 7990 diode 8638 cqy 17 BPW16N CQY36N
Text: CQY 36 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
|
Original
|
PDF
|
CQY36N
BPW16N
D-74025
LP 8029
CQY 24
DIN 7990
diode 8638
cqy 17
BPW16N
|
cqy 17
Abstract: infrared diodes
Text: SSA-005/2 Miniature Opto Array SSA-005/2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow angle components. All leads fit an 0.1” inch matrix.
|
Original
|
PDF
|
SSA-005/2
SSA-005/2
950nm,
cqy 17
infrared diodes
|
Untitled
Abstract: No abstract text available
Text: SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow angle components. All leads fit an 0.1”
|
Original
|
PDF
|
SSA-005-2
SSA-005-2
SSA005-2A
950nm,
|
cqy 17
Abstract: infrared emitters and detectors opto coupler array DATASHEET npn tr array
Text: SSA-005/2 Miniature Opto Array SSA-005/2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flatlensed or narrow angle components. All leads fit an 0.1” inch matrix.
|
Original
|
PDF
|
SSA-005/2
SSA-005/2
SSA005/2A
SSA005/2B
SSA005/2C
SSA005/2D
cqy 17
infrared emitters and detectors
opto coupler array DATASHEET
npn tr array
|
Untitled
Abstract: No abstract text available
Text: SSA-005E&S Miniature IR Array SSA-005 is an eight element plastic moulding designed for use with miniature T 3/4 size opto electronic components. The resulting array is of minimum size at 0.1 inch pitch in a compact housing. The housing is equally suitable for
|
Original
|
PDF
|
SSA-005E
SSA-005
825nm
100mA
950nm,
|
BPW16N
Abstract: CQY 24
Text: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
|
Original
|
PDF
|
BPW16N
D-74025
CQY 24
|
CQY 26
Abstract: BPW17N diode 8308
Text: TELEFUNKEN Semiconductors BPW 17 N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
|
Original
|
PDF
|
BPW17N
D-74025
CQY 26
diode 8308
|
Siebensegmentanzeige
Abstract: cqy 17 CQY91A CQY 84 common kathode 7-segment CQY 65 CQY91K siebensegment cqy91 cqy92A
Text: « H CQY 91 A • CQY 91 K CQY 92 A • CQY 92 K CQY 93 A • CQY 93 K » 'W Rot-, grün- und gelbleuchtende Sieben-Segment-Anzeigen GaAsP und GaP Red, green and yellow Light Emitting Seven Segment Displays (GaAsP and GaP) Anwendung: Allgemeine Anzeigezwecke
|
OCR Scan
|
PDF
|
|
cqy 35 n
Abstract: CQY34 cqy34b TFK 925 TFK BPW 41 N CQY 65 cqy35 TFK 4 314 Fotodiode TFK BPW 20
Text: CQY 33 • CQY 34 • CQY 35 'W Galliumarsenid-Lumineszenzdioden GaAs Infrared Em itting Diodes Anwendung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere Merkmale: • Hermetisches Gehäuse Features:
|
OCR Scan
|
PDF
|
|
CQY86
Abstract: cqy 77 CQY 65 CQY87 V178P V179P V180P 2094V
Text: A CQY 85 • CQY 86 • CQY 87 V 1 7 8 P - V 1 7 9 P - V180P « n » 'W Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: Allgem eine Anzeigezwecke Application: General indicating purposes
|
OCR Scan
|
PDF
|
V178P
-V179P
-V180P
CQY86
cqy 77
CQY 65
CQY87
V179P
V180P
2094V
|
cqy 17
Abstract: CQY 65 7718 cqy 89 cqy 89 a CQY75 CQY 40
Text: CQY 41 • CQY 73 • CQY 75 Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: A llgem eine Anzeigezwecke Application: General indicating purposes Besondere Merkmale: • M iniatur-Kunststoffgehäuse
|
OCR Scan
|
PDF
|
|
CQY74
Abstract: CQY40L CQY 40 CQY74L cqy 81 CQY 65 CQY 84 cqy 77 cqy40 Anzeige
Text: « "w CQY 4 0 L • CQY 72 L • CQY 74 L V 168 P • V 169 P V170P I 1 Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: Allgem eine Anzeigezwecke A p p lic a tio n : General indicating purposes
|
OCR Scan
|
PDF
|
V168P
V169P
V170P
CQY74L
CQY74
CQY40L
CQY 40
cqy 81
CQY 65
CQY 84
cqy 77
cqy40
Anzeige
|
IR diodes TFK 4 245
Abstract: TFK 751 IR diodes TFK 4 940 TFK 940 IR diodes TFK 4 7313 28 pin TFK 925 TFK diodes CQY 65 TFK diodes application
Text: CQY 36 • CQY 37 Galiliumarsenid-Lumineszenzdioden Ga>4s Infrared Emitting Diodes Anw endung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere M erkm ale: Features: • Kunststoff-M iniaturgehäuse
|
OCR Scan
|
PDF
|
|
|
|
TFK 940
Abstract: TFK BPW 75 IR diodes TFK 4 245 TFK 925 cqy 17 IR diodes TFK 4 BPW 64 TFK BPW 14 C TFK BPW 20 diode tfk
Text: CQY 3 6 /9 • CQY 37/9 Neunteilige Galliumarsenid-Lumineszenzdiodenzeilen 9 Element GaAs Infrared Emitting Diodes Arrays Anwendung: Strahlungsquelle im nahen Infrarot-Bereich für Lochstreifenleser Application: Radiation source in near infrared range for tape readers
|
OCR Scan
|
PDF
|
|
DIN 50014
Abstract: tfk 248 CQY 248 CQY42 CQY 65
Text: . « I l » CQY 42 Optoelektronisches Koppelelement Optically Coupled Isolator Aufbau C o n stru ctio n Emitter: Detektor : GaAs-Lumineszenzdiode Silizium-NPN-Epitaxial-Planar-Fototransistor Anwendungen: Galvanische Trennung von Stromkreisen, Rückwirkungsfreier Schalter
|
OCR Scan
|
PDF
|
|
tfk 731
Abstract: TFK BPW 41 N 74140 CQY 38 CQY 66 Fotodiode TFK 925 diode tfk diode s .* tfk Scans-0010327
Text: CQY 38 H 'W GaUliumarsenid-Lumineszenzdiode GaAs Infrared Emitting Diode Anwendung: Strahlungsquelle im nahen Infrarot-Bereich Application: Radiation source in near infrared range Besondere Merkmale: Features: • Metallsockel mit Kunststofflinse • Metal base with plastic lens
|
OCR Scan
|
PDF
|
|
TFK BPW 75
Abstract: TFK 940 TFK 19 001 tfk bpw 77 tfk BPX 28 diode s .* tfk cqy 35 n TFK bpw BPW19 MB28C
Text: CQY 39 Zehnteilige Galliumarsenid-Lumineszenzdiodenzeile 10 Element GaAs Infrared Emitting Diodes Array Anwendung: Strahlungsquelle im nahen Infrarot-B ereich für Lochstreifenleser Application: Radiation source in near infrared range for tape readers Besondere Merkmale:
|
OCR Scan
|
PDF
|
mb-28
TFK BPW 75
TFK 940
TFK 19 001
tfk bpw 77
tfk BPX 28
diode s .* tfk
cqy 35 n
TFK bpw
BPW19
MB28C
|
CQY99
Abstract: CQY 24 CQY34A CQY33A cqy 35 n CQY31 CQV36 CQY32 CQY35A 1018C
Text: Optoelectronic devices GaAs diodes infrared Type Group Fig. Nr. Characteristics - electrical + optical Spectral curve (see page 71) >T a $e and ITlW /e at m W /sr <f at / F = 1 A 'F mA ns ns CQY31 7 80° 1 0.25 100 100 100 2 CQ Y 32 8 10° 1 4.5 100 100
|
OCR Scan
|
PDF
|
CQY31
CQY32
CQY99
CQY 24
CQY34A
CQY33A
cqy 35 n
CQY31
CQV36
CQY32
CQY35A
1018C
|
bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: S tandoff C Dim. B 1.40 4.65 3.15 B.4Q •3.50 6.75 5.55 B.ao Dim. D Total A 16.15 19.15 17.90 20.90 18.25 21.25 20.30 23.30 2 -5 4 .2 0 -8 $ T E C H N IC A L C H A R A C T E R IS T IC S 1 General Characteristics Dimensions: 62.OOLx 4Q.OOW x 19.15H mm 62 COL x 40.00W x 20.90H r m
|
OCR Scan
|
PDF
|
3603C
ICA6798C[
MX-ICA-679-8C-XX-TH
|
DIN 50014
Abstract: CQY80
Text: Optoelektronisches Koppelelement Optically Coupled Isolator Aufbau C o n stru ctio n Emitter: D etektor: GaAs-Lumineszenzdiode Silizium-NPN-Epitaxial-Planar-Fototransistor Anwendungen: Galvanische Trennung von Stromkreisen, rückwirkungsfreier Schalter A p p lic a tio n s :
|
OCR Scan
|
PDF
|
|
RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
|
OCR Scan
|
PDF
|
|
CQY40
Abstract: CQY40L CQY85 CQY86 CQY74 V138P CQX10 V135 V139P V178P
Text: Optoelectronic devices Light emitting diodes Type Fig. Nr. Case Luminous paint C h aracteristics - electrical + optical Spectral curve see page 71 a /„ mcd 80° 1.6 20 1.6 4 80° 1.6 20 5.0 4 at 'F mA US 5 mm Plastic, dull red 5 mm Plastic, dull red 1
|
OCR Scan
|
PDF
|
CQY40L
CQY40/5VL
CQY40/12
CQY85
V178P
V138P
V170P
V180P
CQX12
--22js-â
CQY40
CQY86
CQY74
CQX10
V135
V139P
|