LP 8029
Abstract: DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N CQY37N cqy 17
Text: CQY 37 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.
|
Original
|
PDF
|
CQY37N
BPW17N
D-74025
LP 8029
DIN 7990
CQY 26
7922 diode
cqy 35 n
BPW17N
cqy 17
|
LP 8029
Abstract: CQY 24 DIN 7990 diode 8638 cqy 17 BPW16N CQY36N
Text: CQY 36 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
|
Original
|
PDF
|
CQY36N
BPW16N
D-74025
LP 8029
CQY 24
DIN 7990
diode 8638
cqy 17
BPW16N
|
cqy 17
Abstract: infrared diodes
Text: SSA-005/2 Miniature Opto Array SSA-005/2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow angle components. All leads fit an 0.1” inch matrix.
|
Original
|
PDF
|
SSA-005/2
SSA-005/2
950nm,
cqy 17
infrared diodes
|
Untitled
Abstract: No abstract text available
Text: SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow angle components. All leads fit an 0.1”
|
Original
|
PDF
|
SSA-005-2
SSA-005-2
SSA005-2A
950nm,
|
cqy 17
Abstract: INFRARED DIODES CQY 40 IR array
Text: These components are RoHS compliant Pb SSA-005-2 Miniature IR Array SSA-005-2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flat-lensed or narrow
|
Original
|
PDF
|
SSA-005-2
SSA-005-2
950nm,
cqy 17
INFRARED DIODES
CQY 40
IR array
|
cqy 17
Abstract: infrared emitters and detectors opto coupler array DATASHEET npn tr array
Text: SSA-005/2 Miniature Opto Array SSA-005/2 is an eight element array of silicon phototransistors or gallium arsenide infrared emitters in a polycarbonate housing. It is supplied with either wide angle flatlensed or narrow angle components. All leads fit an 0.1” inch matrix.
|
Original
|
PDF
|
SSA-005/2
SSA-005/2
SSA005/2A
SSA005/2B
SSA005/2C
SSA005/2D
cqy 17
infrared emitters and detectors
opto coupler array DATASHEET
npn tr array
|
pair of led and photo transistor
Abstract: INFRARED DIODES CQY EMITTER
Text: These components are RoHS compliant SSA-005E&S Miniature IR Array Pb SSA-005 is an eight element plastic moulding designed for use with miniature T 3/4 size opto electronic components. The resulting array is of minimum size at 0.1 inch pitch in a compact housing. The housing is
|
Original
|
PDF
|
SSA-005E
SSA-005
200nA
950nm,
pair of led and photo transistor
INFRARED DIODES
CQY EMITTER
|
Untitled
Abstract: No abstract text available
Text: SSA-005E&S Miniature IR Array SSA-005 is an eight element plastic moulding designed for use with miniature T 3/4 size opto electronic components. The resulting array is of minimum size at 0.1 inch pitch in a compact housing. The housing is equally suitable for
|
Original
|
PDF
|
SSA-005E
SSA-005
825nm
100mA
950nm,
|
TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
|
Original
|
PDF
|
1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
|
BPW16N
Abstract: CQY 24
Text: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
|
Original
|
PDF
|
BPW16N
D-74025
CQY 24
|
CQY 26
Abstract: BPW17N diode 8308
Text: TELEFUNKEN Semiconductors BPW 17 N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
|
Original
|
PDF
|
BPW17N
D-74025
CQY 26
diode 8308
|
CQY36
Abstract: BPW16N BPW16
Text: BPW16N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable
|
Original
|
PDF
|
BPW16N
BPW16N
D-74025
15-Jul-96
CQY36
BPW16
|
Photo diode TFK S 186 P
Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission
|
Original
|
PDF
|
|
led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9
|
OCR Scan
|
PDF
|
10x10
led 7 segment anode TIL 702
trw 007 diodes
TDDG 5250 m
817 optron
telefunken transistor
opto smd code marking NEC
TDDG 5250
hoa 865
DIODE PK IN 5401
7segment sm 4150
|
|
|
cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
|
OCR Scan
|
PDF
|
AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
|
RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: S tandoff C Dim. B 1.40 4.65 3.15 B.4Q •3.50 6.75 5.55 B.ao Dim. D Total A 16.15 19.15 17.90 20.90 18.25 21.25 20.30 23.30 2 -5 4 .2 0 -8 $ T E C H N IC A L C H A R A C T E R IS T IC S 1 General Characteristics Dimensions: 62.OOLx 4Q.OOW x 19.15H mm 62 COL x 40.00W x 20.90H r m
|
OCR Scan
|
PDF
|
3603C
ICA6798C[
MX-ICA-679-8C-XX-TH
|
Untitled
Abstract: No abstract text available
Text: Temic BPW17N Semiconductors Silicon NPN Phototransistor Description BPW 17N is a silicon NPN epitaxial planar phototransis tor in a miniature plastic case with a + 12‘ lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable
|
OCR Scan
|
PDF
|
BPW17N
I5-Jut-96
15-Jul
|
LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: ISOCOfl COMPONENTS LTD m u * » t« v . . ir f J i m * » w w » * « » « a » ? j > •3 'V . M i i M S M Haatsio Dooosbs 3 HSE ]> g K M M frn * f t Jf ö iso t WMT3 i j w V > Æ > W i J ö * I £ # •V f t ! OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT
|
OCR Scan
|
PDF
|
|
5202 GE
Abstract: KA 7502 STS7102 TS7101
Text: TELEFUNKEN ELECTRONIC m 44E » ñ ^ D O T b 0011175 2 B1ALG6 Infrared Emitting Diodes G aA s IR Emitting Diodes in Plastic Package Characteristics Package Type I. Dimensions see page 4 9 -5 3 at at U mW/sr mA fp= 1 0 y s /F = 1 A ns mA TV* 1 8 m m Blue p la stic p a c ka ge
|
OCR Scan
|
PDF
|
CQY37N
5202 GE
KA 7502
STS7102
TS7101
|
ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
|
OCR Scan
|
PDF
|
F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
|
CQY80
Abstract: VR BH RC CQY 95 CQY80NG
Text: Temic CQY80N G S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
|
OCR Scan
|
PDF
|
CQY80N
D-74025
12-Dec-97
CQY80
VR BH RC
CQY 95
CQY80NG
|
TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.
|
OCR Scan
|
PDF
|
|