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    CQY37N Price and Stock

    Vishay Semiconductors CQY37N

    EMITTER IR 950NM 100MA RADIAL
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    DigiKey CQY37N Bulk 3,739 1
    • 1 $0.76
    • 10 $0.458
    • 100 $0.76
    • 1000 $0.22292
    • 10000 $0.18188
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    Vishay Intertechnologies CQY37N

    IR EMITTER STD 950NM 1.8 MM PCKG-e4 - Bulk (Alt: 78Y9464)
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    Avnet Americas CQY37N Bulk 14 Weeks, 1 Days 1
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    CQY37N Bulk 7 Weeks, 1 Days 1
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    CQY37N Bulk 6 Weeks 5,000
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    Mouser Electronics CQY37N 7,691
    • 1 $0.7
    • 10 $0.411
    • 100 $0.242
    • 1000 $0.208
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    Verical CQY37N 7,446 51
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    Arrow Electronics CQY37N 7,484 6 Weeks 1
    • 1 $0.6931
    • 10 $0.4295
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    Newark CQY37N Bulk 163 1
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    CQY37N Bulk 11 1
    • 1 $0.065
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    Future Electronics CQY37N 6 Weeks 5,000
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    Bristol Electronics CQY37N 742
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    Quest Components CQY37N 593
    • 1 $0.77
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    TME CQY37N 1
    • 1 $0.43
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    ComSIT USA CQY37N 50,000
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    Component Electronics, Inc CQY37N 4
    • 1 $0.77
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    EBV Elektronik CQY37N 7 Weeks 5,000
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    CQY37N Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CQY37N Vishay Intertechnology GaAs Infrared Emitting Diode in Miniature (T-3/4)Package Original PDF
    CQY37N Vishay Siliconix GaAs Infrared Emitting Diode in Miniature (T-4/3) Package Original PDF
    CQY37N Vishay Telefunken IrED, Single, 950nm Wave Length Original PDF
    CQY37N Philips Components Philips Data Book Scan Scan PDF

    CQY37N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12109

    Abstract: No abstract text available
    Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 12° • Low forward voltage


    Original     		PDF CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 950trademarks 2011/65/EU 2002/95/EC. 12109

    Untitled

    Abstract: No abstract text available
    Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N D-74025 20-May-99

    BPW17

    Abstract: BPW17N CQY37 CQY37N
    Text: CQY37N Vishay Semiconductors ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N D-74025 20-May-99 BPW17 CQY37

    Untitled

    Abstract: No abstract text available
    Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 12° • Low forward voltage


    Original     		PDF CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 2002/95/EC. 2011/65/EU. JS709A

    CQY37

    Abstract: No abstract text available
    Text: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N D-74025 29-Mar-04 CQY37

    BPW17

    Abstract: telefunken BPW17N CQY37N
    Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N D-74025 20-May-99 BPW17 telefunken

    BPW17N

    Abstract: CQY37N
    Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 12° • Low forward voltage


    Original     		PDF CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 11-Mar-11 BPW17N

    BPW17N

    Abstract: CQY37N BPW17
    Text: CQY37N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical


    Original     		PDF CQY37N CQY37N BPW17N D-74025 15-Jul-96 BPW17

    BPW17

    Abstract: BPW17N CQY37N
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC 08-Apr-05 BPW17

    CQY37N

    Abstract: 7922 diode BPW17 Infrared Emitting Diode BPW17N
    Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 12°


    Original     		PDF CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 18-Jul-08 7922 diode BPW17 Infrared Emitting Diode BPW17N

    BPW17

    Abstract: BPW17N CQY37N
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC D-74025 30-Mar-06 BPW17

    BPW17

    Abstract: BPW17N CQY37N
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N 2002/95/Eed 08-Apr-05 BPW17

    Untitled

    Abstract: No abstract text available
    Text: CQY37N Vishay Telefunken ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N D-74025 20-May-99

    LP 8029

    Abstract: DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N CQY37N cqy 17
    Text: CQY 37 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N BPW17N D-74025 LP 8029 DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N cqy 17

    BPW17

    Abstract: CQY37N BPW17N
    Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N D-74025 20-May-99 BPW17

    BPW17

    Abstract: BPW17N CQY37N
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC 08-Apr-05 BPW17

    Untitled

    Abstract: No abstract text available
    Text: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N D-74025 05-May-04

    CQY37

    Abstract: No abstract text available
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC D-74025 08-Mar-05 CQY37

    8239

    Abstract: BPW17 BPW17N CQY37N
    Text: BPW17N Vishay Telefunken Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of


    Original     		PDF BPW17N BPW17N D-74025 20-May-99 8239 BPW17 CQY37N

    A 69157 scr

    Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
    Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer


    Original     		PDF 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3

    Untitled

    Abstract: No abstract text available
    Text: Temic CQY37N Sem i I o nd u c t n r s GaAs Infrared Emitting Diode in Miniature T - 3A Package Description C Q Y 3 7 N is a s ta n d a r d G a A s in f r a re d e m itt in g d io d e in a m i n ia t u r e to p v ie w p la s tic p a c k a g e . Its c l e a r le n s p r o v id e s a h ig h r a d ia n t in te n s ity w ith o u t e x ­


    OCR Scan     		PDF CQY37N 15-Jul-96 7922e

    CQX48B

    Abstract: IR Emitters "IR Emitters"
    Text: VISH A Y Vishay Telefunken ▼ Selector Guide IREDs Infrared Emitting Diodes Package Dim. Fig- Characteristics Jype + /- tp Standard IR Emitters GaAs 950 nm in Plastic Package T 40° 25 ! CQY36N am 10 26 L / mW/sr Ip / mA VF/ V CQY37N 12 ° 5 (>2.2) TSUS4400


    OCR Scan     		PDF CQY36N CQY37N TSUS4400 CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 TSUS5400 TSUS5401 IR Emitters "IR Emitters"

    CQY36

    Abstract: CQY37 CQY37N
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 MK-CBeTOAMOAbi □ 1,8 MM Kofl: [H M ] CQY37N CQY36 950 950 P„ [MBT/cpeflH.] >2,2 >0,7 Yron o63opa [0] 12 40 CQY36 CQY37 i-. nom. nporpaMMa nociaBOK KOMnaHHH TME electronics


    OCR Scan     		PDF CQY37N CQY36 o63opa CQY37 CQY36 CQY37

    CQX48B

    Abstract: TLH04400 TLRG542
    Text: V I^ ^ Y Vishay Telefunken Table of Virtual Source Sizes Part Nunber Virtual Source Size mm Part Nunber Virtual Source Size (mm) Part Nunber Virtual Source Size (mm) TLBR5410 3.6 TLHP5800 3.7 TLLY5401 3.7 TLDR4400 2.1 TLHR4200 1.5 TLMA3100 1.8 TLDR4900 2


    OCR Scan     		PDF TLBR5410 TLDR4400 TLDR4900 TLDR5400 TLDR5800 TLHE4900 TLHE5100 TLHE5101 TLHE5102 TLHE5800 CQX48B TLH04400 TLRG542