K 1358 fet transistor
Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35003N6A
MRFG35003N6AT1
K 1358 fet transistor
MRFG35003N6AT1
A113
A114
A115
AN1955
C101
JESD22
ASME 16.17
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MMTB3906WT1
Abstract: ECSH0GY106R SY88212L TP10 SY88216 apc driver for laser diode 67-1636-1-ND
Text: SY88212L Electrical Evaluation Board General Description Features This electrical evaluation board allows for evaluating the performance of the SY88212 laser diode driver while driving passive load. Datasheets and support documentation can be found on Micrel's web site at: www.micrel.com.
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SY88212L
SY88212
SY88212L
M9999-043008-Aauthorized
M9999-043008-A
MMTB3906WT1
ECSH0GY106R
TP10
SY88216
apc driver for laser diode
67-1636-1-ND
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CRCW040210R0F
Abstract: ECSH0GY106R SY88216L TP10
Text: SY88216L Electrical Evaluation Board General Description Features This electrical evaluation board allows for evaluating the performance of the SY88216 burst mode laser diode driver while driving passive load. Datasheets and support documentation can be found on
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SY88216L
SY88216
SY88216L
M9999-022108-A
CRCW040210R0F
ECSH0GY106R
TP10
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MRFG35003N6AT1
Abstract: IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 0, 7/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35003N6A
MRFG35003N6AT1
MRFG35003N6AT1
IrL 1540 N
FET 4900
A113
A114
A115
AN1955
C101
JESD22
n channel fet k 1118
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35003N6A
MRFG35003N6AT1
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Post amplifier
Abstract: Mod Jp1 J1-J11 CRCW040250R0F
Text: SY88232L and SY88236L Electrical Evaluation Board General Description Features This evaluation board allows for checking the performance of the SY88236L burst mode driver/Post Amplifier and the SY88232L continuous mode laser driver/Post Amplifier while driving passive load.
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SY88232L
SY88236L
SY88236L
SY88232L-AL/SY88236L-AL
M9999-092509-A
Post amplifier
Mod Jp1
J1-J11
CRCW040250R0F
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Transistor No C110
Abstract: C1-10 ECSH0GY106R LM4040 LM4041 MMBT3904WT1 SY88422L micrel CRCW04021000F CRCW040250R0F
Text: SY88422L Electrical Evaluation Board General Description Features This electrical evaluation board allows for checking the performance of the SY88422L while driving a passive load. Datasheets and support documentation can be found on Micrel's web site at: www.micrel.com.
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SY88422L
SY88422L
M9999-022108-A
40horized
Transistor No C110
C1-10
ECSH0GY106R
LM4040
LM4041
MMBT3904WT1
micrel
CRCW04021000F
CRCW040250R0F
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MRFG35003N6AT1
Abstract: ATC100A101 A113 A114 A115 AN1955 C101 JESD22 0841 K 1358 fet transistor
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 1, 11/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35003N6A
MRFG35003N6AT1
MRFG35003N6AT1
ATC100A101
A113
A114
A115
AN1955
C101
JESD22
0841
K 1358 fet transistor
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