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    CRCW08052K00FKTA Price and Stock

    Vishay Dale CRCW08052K00FKTA

    RES SMD 2K OHM 1% 1/8W 0805
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    Vishay Intertechnologies CRCW08052K00FKTA

    CRCW0805 2K 1% 100 RT1 - Product that comes on tape, but is not reeled (Alt: 05F1508)
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    Vishay Intertechnologies CRCW08052K00FKEA

    Thick Film Resistors - SMD 1/8watt 2Kohms 1% 100ppm
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    Vishay Intertechnologies CRCW08052K00FKTC

    Thick Film Resistors - SMD CRCW0805 2K 1% 100 RT6
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    Mouser Electronics CRCW08052K00FKTC
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    Vishay Intertechnologies CRCW08052K00FKTABC

    Resistor: thick film; SMD; 0805; 2kΩ; 0.125W; ±1%; -55÷155°C
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    TME CRCW08052K00FKTABC 6,100 100
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    Find more CRCW08052K00FKTA price and stock on Findchips.com

    CRCW08052K00FKTA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CRCW08052K00FKTA Vishay Thick Film Resistor; Series:CRCW; Resistance:2kohm; Resistance Tolerance:+/- 1 %; Power Rating:0.125W; Voltage Rating:150V; Temperature Coefficient:+/-100 ppm; Package/Case:0805; Leaded Process Compatible:No Original PDF

    CRCW08052K00FKTA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    OP6180

    Abstract: CRCW08050R0FKEA 8425 3214W-1-201E pl-46 panasonic inductor date code NH transistor c114 transistors transistor c114 chip nxp 544 GRM31CR72A105KA0
    Text: AN10951 1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P Rev. 1 — 10 December 2010 Application note Document information Info Content Keywords Doherty architecture, Digital PreDistortion DPD , IS-95, multi-carrier


    Original     		AN10951 BLF7G20LS-90P BLF7G21LS-160P IS-95, BLF7G20LS-90P, BLF7G21LS-160P OP6180 CRCW08050R0FKEA 8425 3214W-1-201E pl-46 panasonic inductor date code NH transistor c114 transistors transistor c114 chip nxp 544 GRM31CR72A105KA0 PDF

    78L08

    Abstract: BLF7G22LS-130 MMBT2222 2N2222 nxp 544
    Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 02 — 25 February 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,


    Original     		AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 78L08 MMBT2222 2N2222 nxp 544 PDF

    OP6180

    Abstract: OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 BLF7G20LS-200 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118
    Text: AN10921 BLF7G20LS-200 Doherty 1.805 to 1.88 GHz RF power amplifier Rev. 01 — 16 July 2010 Application note Document information Info Content Keywords BLF7G20LS-200, Doherty, RF, LDMOS Abstract This application note describes the design and performance of a power


    Original     		AN10921 BLF7G20LS-200 BLF7G20LS-200, OP6180 OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118 PDF

    GRM32ER7YA106K88L

    Abstract: AN10847 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E
    Text: AN10847 Doherty RF performance analysis using the BLF6G20-230PRN Rev. 01 — 29 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty amplifiers, main amplifier, peak amplifier, AB amplifiers, RF performance, Digital PreDistortion DPD , base station


    Original     		AN10847 BLF6G20-230PRN BLF6G20-230PRN, AN10847 GRM32ER7YA106K88L 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E PDF

    Untitled

    Abstract: No abstract text available
    Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 2 — 28 October 2013 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200


    Original     		AN10944 BLF7G20LS-200 BLF7G20LS-200 1J503S 1P503S PDF

    blf574

    Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
    Text: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract


    Original     		AN10714 BLF574 BLF574, AN10714 Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d PDF

    Rogers 3006

    Abstract: transistor c118 BLF7G20LS-200 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109
    Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 1 — 4 January 2011 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200


    Original     		AN10944 BLF7G20LS-200 BLF7G20LS-200 Rogers 3006 transistor c118 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109 PDF

    blf578

    Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
    Text: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power


    Original     		AN10800 BLF578 BLF578, AN10800 BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X PDF

    CRCW08050R0FKEA

    Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
    Text: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P


    Original     		AN10933 BLF7G27LS-150P IS-95, BLF7G27LS-150P CRCW08050R0FKEA 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 national 2n2222 PDF

    NJM 78L08UA-ND

    Abstract: nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor
    Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 — 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,


    Original     		AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 NJM 78L08UA-ND nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor PDF