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CRCW12061000FKTA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
A1156 TRANSISTOR Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35005AN MRFG35005ANT1 A1156 TRANSISTOR
t490d106k035at Abstract: MW6S004NT1 MW6S004N A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22 Text: Freescale Semiconductor Technical Data Document Number: MW6S004N Rev. 2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier	Original	PDF	MW6S004N MW6S004NT1 t490d106k035at MW6S004NT1 MW6S004N A113 A114 A115 AN1955 C101 CDR33BX104AKYS JESD22
FET 4900 Abstract: MRFG35005ANT1 application note A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35005AN MRFG35005ANT1 FET 4900 MRFG35005ANT1 application note A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1
IrL 1540 N Abstract: atc 17-33 A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1 ATC100a101 Text: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35005AN MRFG35005ANT1 IrL 1540 N atc 17-33 A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1 ATC100a101
atc 17-33 Abstract: FET 4900 CRCW12061000FKTA A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 0, 7/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	PDF	MRFG35005AN MRFG35005ANT1 atc 17-33 FET 4900 CRCW12061000FKTA A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1
CRCW12061000FKTA Abstract: ad250 A113 A114 A115 AN1955 C101 JESD22 MRF6S21060NBR1 MRF6S21060NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 4, 12/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and	Original	PDF	MRF6S21060N MRF6S21060NR1 MRF6S21060NBR1 CRCW12061000FKTA ad250 A113 A114 A115 AN1955 C101 JESD22 MRF6S21060NBR1
AT-600-B Abstract: TD-SCDMA A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 2, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W- CDMA base station applications with frequencies from 2110	Original	PDF	MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 AT-600-B TD-SCDMA A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1