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    CRCW12064K70FKEA Price and Stock

    Vishay Dale CRCW12064K70FKEAC

    RES SMD 4.7K OHM 1% 1/4W 1206
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    Vishay Dale CRCW12064K70FKEA

    RES SMD 4.7K OHM 1% 1/4W 1206
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    Vishay Dale CRCW12064K70FKEAHP

    RES SMD 4.7K OHM 1% 3/4W 1206
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    Vishay Intertechnologies CRCW12064K70FKEA

    D25/CRCW1206 100 4K7 1% ET1 e3 - Tape and Reel (Alt: CRCW12064K70FKEA)
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    Vishay Intertechnologies CRCW12064K70FKEAC

    Res Thick Film 1206 4.7K Ohm 1% 1/4W ?100ppm/?C Molded SMD Paper T/R - Tape and Reel (Alt: CRCW12064K70FKEAC)
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    CRCW12064K70FKEA Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CRCW12064K70FKEA Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 4.7K OHM 1% 1/4W 1206 Original PDF
    CRCW12064K70FKEAC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 4.7K OHM 1% 1/4W 1206 Original PDF
    CRCW12064K70FKEAHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 4.7K OHM 1% 3/4W 1206 Original PDF

    CRCW12064K70FKEA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage


    Original     		MD7IC2251N MD7IC2251N MD7IC2251NR1 MD7IC2251GNR1 PDF

    1206 SMD Capacitor types

    Abstract: Nu SmD TRANSISTOR smd ss 5 transistor smd transistor c1c SMD Transistor SS F NPC1034 NCP1034 tranzistor smd NPN TRANZISTOR tranzistor smd KEY
    Text: DN06041/D Design Note – DN06041/D NCP1034 Buck Converter Device NCP1034 Input Voltage 48 V ±20 % Output Voltage 5V Output Current 5A Description Voltage Topology ripple < 30 mV Buck I/O Isolation None Key Features This Design Note describes high voltage, high power


    Original     		DN06041/D NCP1034 NCP1034 NCP1034. 1206 SMD Capacitor types Nu SmD TRANSISTOR smd ss 5 transistor smd transistor c1c SMD Transistor SS F NPC1034 tranzistor smd NPN TRANZISTOR tranzistor smd KEY PDF

    amplifier MA-920

    Abstract: ATC600F560BT500XT TO270WB atc600 A113 A114 A115 AN1955 MRFE6S9046GN JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S9046NR1 MRFE6S9046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier


    Original     		MRFE6S9046N MRFE6S9046NR1 MRFE6S9046GNR1 MRFE6S9046NR1 amplifier MA-920 ATC600F560BT500XT TO270WB atc600 A113 A114 A115 AN1955 MRFE6S9046GN JESD22 PDF

    ATC600F4R7BT250XT

    Abstract: ATC600F390JT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage


    Original     		MD7IC2251N MD7IC2251NR1 MD7IC2251GNR1 ATC600F4R7BT250XT ATC600F390JT250XT PDF

    J221

    Abstract: CW12010T0050G
    Text: Freescale Semiconductor Technical Data Document Number: A2I25D012N Rev. 0, 9/2014 RF LDMOS Wideband Integrated Power Amplifiers The A2I25D012N wideband integrated power amplifier is optimized to function with a single multi-band circuit usable from 2300 to 2690 MHz. This


    Original     		A2I25D012N A2I25D012N A2I25D012NR1 A2I25D012GNR1 J221 CW12010T0050G PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor ‘ Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		MRFE6S8046N MRFE6S8046NR1 MRFE6S8046GNR1 MRFE6S8046NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF2006N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier MMRF2006NT1 The MMRF2006N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage


    Original     		MMRF2006N MMRF2006NT1 MMRF2006N PDF

    J477

    Abstract: J733 J449 MD7IC2250 MD7IC2250N AN1977 IRL 501 TO272* APPLICATION AN1987 ATC600F330JT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2250N Rev. 0, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2250N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		MD7IC2250N MD7IC2250N MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 J477 J733 J449 MD7IC2250 AN1977 IRL 501 TO272* APPLICATION AN1987 ATC600F330JT250XT PDF

    CRCW060333R0FKEA

    Abstract: 70201152 CRCW08054K70FK CRCW0603604RFKEA CRCW08054K70FKEA CRCW08050000Z0EA CRCW06031K62FKEA CRCW08054K99FKEA crcw0603511rfkea CRCW0805330RFK
    Text: 1872-2012.qxp:QuarkCatalogTempNew 9/10/12 2:56 PM Page 1872 INTERCONNECT TEST & MEASUREMENT 23 Thick Film Chip Resistors CRCW Series — Thick Film, Rectangular Chip Resistors RoHS ᭤ Metal Glaze on High Quality Ceramic ᭤ Protective Overglaze ᭤ Solder Contacts on Ni Barrier Layer


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S9046NR1 MRFE6S9046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier


    Original     		MRFE6S9046N MRFE6S9046NR1 MRFE6S9046GNR1 MRFE6S9046NR1 PDF

    J733

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7IC2250N Rev. 0, 12/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2250N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage


    Original     		MD7IC2250N MD7IC2250N MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1 J733 PDF

    MRFE6S9046GN

    Abstract: ATC600F1R2BT250XT j162 438 j A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		MRFE6S8046N MRFE6S8046NR1 MRFE6S8046GNR1 MRFE6S8046NR1 MRFE6S9046GN ATC600F1R2BT250XT j162 438 j A113 A114 A115 AN1955 C101 JESD22 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2020N Rev. 1, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC2020NT1 The MW7IC2020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage


    Original     		MW7IC2020N MW7IC2020NT1 MW7IC2020N 211ver PDF

    ATC600F330JT250XT

    Abstract: J706 W5043 J-104 J420
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2020N Rev. 0, 1/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC2020NT1 The MW7IC2020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage


    Original     		MW7IC2020N MW7IC2020NT1 ATC600F330JT250XT J706 W5043 J-104 J420 PDF

    INDUCTOR 330UH

    Abstract: Resistor 100K c38 transistor 0603 33pF 50V X7R resistor 330 ohms 100ME12AX 100uF 250v capacitor vishay c40 capacitor 47UF uCapacitor X7R 1206u transistor c36
    Text: DEMO CIRCUIT 950A LT3825START AND LT3837 QUICK GUIDE LT3825 and LT3837 Non-opto Synchronous Flyback Controller DESCRIPTION Demonstration circuit 950A is a 30W multi-output synchronous flyback converter in 1/8 brick format featuring the LT3825 and LT3837. Output voltage sensing is implemented without the use of opto-coupler, by sensing


    Original     		LT3825 LT3837 LT3837. DC950A-A 6V-72V LT3825. DC950A-B INDUCTOR 330UH Resistor 100K c38 transistor 0603 33pF 50V X7R resistor 330 ohms 100ME12AX 100uF 250v capacitor vishay c40 capacitor 47UF uCapacitor X7R 1206u transistor c36 PDF