hysol OS4000 epoxy
Abstract: Gan on silicon substrate C430CB230-S0100 OS4000
Text: SuperBlue LEDs C430CB230-S0100 Cree’s low-current SuperBlue LEDs combine highly efficient GaN with Cree’s proprietary G•SiC substrate to deliver the ultimate price/performance for blue LEDs. The C430CB230-S0100 is designed for use in backlighting and
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C430CB230-S0100
C430CB230-S0100
OS4000
hysol OS4000 epoxy
Gan on silicon substrate
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C430CB290-S0100
Abstract: OS4000
Text: SuperBlue LEDs C430CB290-S0100 Cree’s SuperBlue LEDs combine highly efficient GaN with Cree’s proprietary G•SiC substrate to deliver the ultimate price/performance for high-intensity blue LEDs. The C430CB290-S0100 is designed for use in high ambient-light
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C430CB290-S0100
C430CB290-S0100
OS4000
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Untitled
Abstract: No abstract text available
Text: SuperBlue Generation II LEDs Preliminary Data Sheet C430CB230-S2100 Cree’s low-current SuperBlue Generation II LEDs combine highly eficient GaN with Cree’s proprietary G•SiC substrate to deliver the ultimate price/performance for blue LEDs. The C430CB230-S2100 is designed for automotive
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C430CB230-S2100
C430CB230-S2100
CB230
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Gan on silicon transistor
Abstract: Microwave Devices CDPA21480 MESFET CGH21240F LDMOS NONLINEAR digital Pre-distortion silicon carbide NONLINEAR MODEL LDMOS
Text: AWR Success Story Cree Speeds Development of High-Performance GaN Doherty Amplifiers by 70% Microwave Office Capabilities Provide First-Pass Design Success of Complex 2.1-GHz Circuits Application: Gallium Nitride-based CUSTOMER BACKGROUND While Cree, Inc., based in Durham, NC, is best known outside the microwave
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C430
Abstract: C430CB230-S0100 OS4000
Text: SuperBlue Generation II LEDs Preliminary Data Sheet C430CB230-S2100 Cree’s low-current SuperBlue Generation II LEDs combine highly efficient GaN with Cree’s proprietary G•SiC substrate to deliver the ultimate price/performance for blue LEDs. The C430CB230-S2100 is designed for automotive
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C430CB230-S2100
C430CB230-S2100
CB230
C430
C430CB230-S0100
OS4000
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c430-cb290-s2100
Abstract: No abstract text available
Text: SuperBlue Generation II LEDs Preliminary Data Sheet C430CB290-S2100 Cree’s SuperBlue LEDs combine highly eficient GaN with Cree’s proprietary G•SiC substrate to deliver the ultimate price/performance for high-intensity blue LEDs. The C430CB290-S2100 is designed for automotive applications or
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C430CB290-S2100
C430CB290-S2100
CB290
c430-cb290-s2100
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OS4000
Abstract: C430-CB290 C430CB290-S2100 CB290
Text: SuperBlue Generation II LEDs Preliminary Data Sheet C430CB290-S2100 Cree’s SuperBlue LEDs combine highly efficient GaN with Cree’s proprietary G•SiC substrate to deliver the ultimate price/performance for high-intensity blue LEDs. The C430CB290-S2100 is designed for automotive applications or
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C430CB290-S2100
C430CB290-S2100
CB290
OS4000
C430-CB290
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JEDEC J-STD-020d.1
Abstract: sac305 SAC305 reflow profile SAC305 solder paste sac305 kester SAC305 reflow Kester sn-pb-ag solder preform J-STD-020D SAC-305
Text: APPLICATION NOTE Solder Mounted Packaged Transistors Introduction This document is a supplement to Cree’s data sheet. It describes the recommended conditions under which Cree’s packaged transistors are to be soldered into amplifiers. Solder Temperatures Defined
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J-STD-020D
APPNOTE-007
JEDEC J-STD-020d.1
sac305
SAC305 reflow profile
SAC305 solder paste
sac305 kester
SAC305 reflow
Kester
sn-pb-ag solder preform
SAC-305
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ansys
Abstract: tyra 2.5mm DC power jack Ansys led
Text: Cree XLamp® MP-L EasyWhite Referenzdesign für Pendelleuchten Anwendungsempfehlung Die vorliegende Anwendungsempfehlung zeigt eine denkbar simple Methode zur Integration der Cree XLamp® MP-L EasyWhite™ LED in eine Pendelleuchte, eine beliebte Hängelampe, bei der traditionell A-Lampen
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CLD-AP40
ansys
tyra
2.5mm DC power jack
Ansys led
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Untitled
Abstract: No abstract text available
Text: G•SiC Technology SuperBlue LEDs C430CB230-S0100 Features Applications • High Performance – 650 µW 465nm • Segmented Displays • Single Wire Bond Structure • High Resolution Video Displays • Class II ESD Rating Description Cree’s low current SuperBlue LEDs combine highly efficient GaN with Cree’s proprietary G•SiC®
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C430CB230-S0100
465nm)
C430CB230S0100
C430CB230-S0100
25ification
OS4000
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CMPA2560025F
Abstract: CMPA2560025F-TB c08bl242x
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025F
CMPA2560025F
CMPA25
60025Fs
CMPA2560025F-TB
c08bl242x
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CMPA0060002D
Abstract: bonding wire cree
Text: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon
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CMPA0060002D
CMPA0060002D
CMPA00
bonding wire cree
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hemt .s2p
Abstract: No abstract text available
Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/
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CGH55030F2
CGH55030P2
CGH55030F2/CGH55030P2
CGH55030F2/
CGH55030P2
CGH5503
CGH55
030F2
hemt .s2p
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CMPA2735075F
Abstract: IDQ Freq Products RF-35-0100-CH
Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2735075F
CMPA2735075F
CMPA27
35075F
78001SA
IDQ Freq Products
RF-35-0100-CH
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CGH55030F2
Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE
Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/
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CGH55030F2
CGH55030P2
CGH55030F2/CGH55030P2
CGH55030F2/
CGH55030P2
CGH5503
CGH55
030F2
CGH5503
CGH55030
CGH55030-TB
JESD22
CGH55030P2 APPLICATION NOTE
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CMPA2560025F
Abstract: CMPA2560025F-TB
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025F
CMPA2560025F
CMPA25
60025Fs
CMPA2560025F-TB
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CMPA2560025F
Abstract: CMPA2560025F-TB JESD22 A114D
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025F
CMPA2560025F
CMPA25
60025F
CMPA2560025F-TB
JESD22
A114D
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Untitled
Abstract: No abstract text available
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025F
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CMPA25
60025F
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CMPA2560025F
Abstract: No abstract text available
Text: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025D
CMP2560025D
CMPA25
CMPA2560025D
CMPA2560025F
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Untitled
Abstract: No abstract text available
Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA5585025F
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transistor 15478
Abstract: TRANSISTOR SMD 9014 transistor 9014 smd CGH55015F2 data sheet transistor 9014
Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/
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CGH55015F2
CGH55015P2
CGH55015F2/CGH55015P2
CGH55015F2/
CGH55015P2
CGH5501
CGH55
015F2
transistor 15478
TRANSISTOR SMD 9014
transistor 9014 smd
data sheet transistor 9014
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Untitled
Abstract: No abstract text available
Text: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2735075F
CMPA2735075F
CMPA27
35075F
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CMPA2560025F
Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T
Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2560025F
CMPA2560025F
CMPA25
60025Fs
CMPA2560025F-TB
Cree Microwave
c08bl242x
C08BL242X-5UN-X0T
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Untitled
Abstract: No abstract text available
Text: G'SiC Technology SuperBlue LEDs C430CB230-S0100 Features Applications • High Performance - 650 |iW 465nm • Segmented Displays • Single Wire Bond Structure • High Resolution Video Displays • Class IIESD Rating Description Cree’s low current SuperBlue™ LEDs combine highly efficient GaN with Cree’s proprietary G*SiC®
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C430CB230-S0100
465nm)
C430CB230S0100
C430CB230-S0100
S4000
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