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    CT60AM Search Results

    CT60AM Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    CT60AM-18F#F00 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
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    CT60AM Price and Stock

    Rochester Electronics LLC CT60AM-18F-G02

    N-CHANNEL IGBT, 900V, 60A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CT60AM-18F-G02 Bulk 8,770 50
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    Renesas Electronics Corporation CT60AM-18F#G02

    CT60AM - N-Channel IGBT, 900V, 60A '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics CT60AM-18F#G02 8,770 1
    • 1 $5.88
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    • 100 $5.53
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    • 10000 $5
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    CT60AM Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CT60AM-18B Mitsubishi Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Original PDF
    CT60AM-18B Mitsubishi MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR RESONANT INVERTER USE Original PDF
    CT60AM-18B Renesas Technology IGBT Chip, N Channel, 900V, TO-3PL, 3-Pin Original PDF
    CT60AM-18B Mitsubishi IGBT - Resonant Inverter Use Scan PDF
    CT60AM-18C Renesas Technology IGBT Transistor, Insulated Gate Bipolar Transistor Original PDF
    CT60AM-18C Renesas Technology RESONANT INVERTER USE Original PDF
    CT60AM-18C-AD Renesas Technology IGBT Transistor, Insulated Gate Bipolar Transistor Original PDF
    CT60AM-18F Mitsubishi Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Original PDF
    CT60AM-18F Powerex INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    CT60AM-18F Renesas Technology Insulated Gate Bipolar Transistor Original PDF
    CT60AM-18F Renesas Technology Insulated Gate Bipolar Transistor Original PDF
    CT60AM-18F Mitsubishi IGBT for Microwave Oven, TO-3PL Scan PDF
    CT60AM-18F-AD Renesas Technology Insulated Gate Bipolar Transistor Original PDF
    CT60AM-20 Mitsubishi IGBT - Resonant Inverter Use Scan PDF

    CT60AM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ct60am

    Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V


    Original     		PDF CT60AM-18B 20MAX. ct60am resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic

    ct60am18b

    Abstract: BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm φ 3.2 4 wr ¡VCES . 900V ¡IC . 60A


    Original     		PDF CT60AM-18B ct60am18b BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor

    CT60AM-18F

    Abstract: IGBT tail time CT60AM-18F-AD MICROWAVE SEMICONDUCTORS CORP PRSS0004ZC-A
    Text: CT60AM-18F Insulated Gate Bipolar Transistor REJ03G1374-0200 Previous: MEJ02G0023-0101 Rev.2.00 Jul 07, 2006 Features • VCES : 900 V • IC : 60 A • Integrated fast-recovery diode Appearance Figure RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL)


    Original     		PDF CT60AM-18F REJ03G1374-0200 MEJ02G0023-0101) PRSS0004ZC-A CT60AM-18F IGBT tail time CT60AM-18F-AD MICROWAVE SEMICONDUCTORS CORP PRSS0004ZC-A

    CT60AM-18F

    Abstract: CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time
    Text: MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES . 900V


    Original     		PDF CT60AM-18F 20MAX. CT60AM-18F CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time

    CT60AM-18C

    Abstract: CT60AM-18C-AD MICROWAVE SEMICONDUCTORS CORP
    Text: CT60AM-18C Insulated Gate Bipolar Transistor REJ03G0287-0100 Rev.1.00 Aug.20.2004 Features • • • • VCES : 900 V IC : 60 A Integrated fast-recovery diode For voltage-resonance Appearance Figure TO-3PL 2, 4 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector


    Original     		PDF CT60AM-18C REJ03G0287-0100 CT60AM-18C CT60AM-18C-AD MICROWAVE SEMICONDUCTORS CORP

    DIODE 10D2

    Abstract: CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1
    Text: MITSUBISHI MITSUBISHI NchNch IGBT IGBT CT60AM-18F CT60AM-18F INSULATED INSULATED GATE GATE BIPOLAR BIPOLAR TRANSISTOR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 4.0 ● VCES . 900V


    Original     		PDF CT60AM-18F 20MAX. DIODE 10D2 CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1

    CT60AM-18F

    Abstract: IGBT 900v 60a ct60am18F ct60am DSA007480
    Text: MITSUBISHI Nch IGBT ARY CT60AM-18F MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN.


    Original     		PDF CT60AM-18F 20MAX. CT60AM-18F IGBT 900v 60a ct60am18F ct60am DSA007480

    CT60AM-18C-AD

    Abstract: CT60AM-18C
    Text: CT60AM-18C Insulated Gate Bipolar Transistor REJ03G0287-0100 Rev.1.00 Aug.20.2004 Features • • • • VCES : 900 V IC : 60 A Integrated fast-recovery diode For voltage-resonance Appearance Figure TO-3PL 2, 4 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector


    Original     		PDF CT60AM-18C REJ03G0287-0100 CT60AM-18C-AD CT60AM-18C

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    P-Channel mosfet 400v to220

    Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
    Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages


    Original     		PDF CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    CT60AM-18C

    Abstract: CT60AM-18C-AD
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    resonant inverter

    Abstract: CT60AM-18B HIGH VOLTAGE DIODE for microwave ovens
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    CT60AM-18B

    Abstract: resonant inverter IGBT CT60AM CT60AM18B ct60am
    Text: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT60AM-18B RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 2 •— ' V c e s . 900V ' l e .60A


    OCR Scan     		PDF CT60AM-18B 20MAX. 57KH23 CT60AM-18B resonant inverter IGBT CT60AM CT60AM18B ct60am

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE Dimensions in mm OUTLINE DRAWING 5 ‘ 2 0.5 • VCES . 900V @ •3 © GATE COLLECTOR EMITTER COLLECTOR


    OCR Scan     		PDF CT60AM-18B

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. « @ LJ/ 0.5 5.45 5.45 • V c e s . 900V o © • le .60A


    OCR Scan     		PDF CT60AM-18F 20MAX.

    IGBT CT60AM

    Abstract: CT60AM-18F
    Text: MITSUBISHI Neh IGBT CT60AM-18F -3 ;' \> V.aI i«'ai.Ssv>w8tì' 0 soW INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. <>3.2 •— D 0.5 5.45 5.45 • V c e s .900V


    OCR Scan     		PDF CT60AM-18F 20MAX. IGBT CT60AM CT60AM-18F

    transistor 3005

    Abstract: transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 20MAX. >3.2 «— © 0.5 5.45 5.45 • V ces . 1000V © © © GATE COLLECTOR EMITTER


    OCR Scan     		PDF CT60AM-20 20MAX. T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S transistor 3005 transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201

    CT60AM-20

    Abstract: CT60AM20 TRANSISTOR ct60am resonant inverter CT60AM
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE CT60AM-20 • VCES . 1000V • 1C . •• ■60A • Integrated Fast Recovery Diode


    OCR Scan     		PDF CT60AM-20 CT60AM-20 CT60AM20 TRANSISTOR ct60am resonant inverter CT60AM

    FS10KM12

    Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
    Text: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings


    OCR Scan     		PDF O-220S CT20VS-8 CT20VSL-8 O-220C O-220F CT20TM-8 CT20AS-8 CT20ASL-8 CT20ASJ-8 CT20VM-8 FS10KM12 FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20

    Untitled

    Abstract: No abstract text available
    Text: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ShOTt FOfTTI D 3Î3 Selector Guide Discrete IGBTs 3rd Generation IGBT Maximum Ratings, Tc =:25°C Device Electrical Characteristics VcE(SAT), (V) Max. Typ- tf(max) (|iS ) 3.0


    OCR Scan     		PDF CT30SM-12 CT75AM-12 CT60AM-20 CT20ASJ-8 TQ-220S

    BCR16HM12L

    Abstract: TRIAC CR02AM BS08A TRIAC BCR 10 AM BCR16HM-12L triac bcr TRIAC BCR 1 AM TRIAC BCR 12l CR3CM-8 BCR30GM
    Text: WVUEREX Powerex, Inc., 200 m ills Street, Youngwood, Pennsylvania 15897-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 TH 3C . . . & S H iC O tl —. . . Controlled Rectifiers (SCRs) & 3rd Generation IGBT


    OCR Scan     		PDF BP107, O-220 TQ-220F O-202 BCR10CM-8 BCR10CM-8L BCR12CM-8 BCR12CM-8L BCR16CM-8 BCR16CM-8L BCR16HM12L TRIAC CR02AM BS08A TRIAC BCR 10 AM BCR16HM-12L triac bcr TRIAC BCR 1 AM TRIAC BCR 12l CR3CM-8 BCR30GM

    CT-30sm-12

    Abstract: TQ-220F
    Text: • IGBT FOR STROBO FLASHER Max. ratings Type No. V •on A} Vÿfft - - “ 400 130 40 10 ±0.1 7.0 400 130 40 10 ±0.1 7.0 TQ-220F 400 130 40 10 ±0.1 7.0 TO-HOiFin-eut! 400 130 40 10 ±0.1 400 130 16 10 ±0.1 4.0 400 130 16 10 ±0.1 2.0 TO-220|F¡n-cul¡


    OCR Scan     		PDF CT20AS-8 CT20TM-8 CT20VM-8 CT20VS-8 CT20ASL-8 CT20VML-8 CT20VSL-8 CT20ASJ-8 CT25AS-8 CT25ASJ-8 CT-30sm-12 TQ-220F