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    CT60AM IGBT Search Results

    CT60AM IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    GT30N135SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1350 V, 30 A, Built-in Diodes, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J65MRB Toshiba Electronic Devices & Storage Corporation IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    CT60AM IGBT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CT60AM-20

    Abstract: CT60AM20 TRANSISTOR ct60am resonant inverter CT60AM
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE CT60AM-20 • VCES . 1000V • 1C . •• ■60A • Integrated Fast Recovery Diode


    OCR Scan     		CT60AM-20 CT60AM-20 CT60AM20 TRANSISTOR ct60am resonant inverter CT60AM PDF

    DIODE 10D2

    Abstract: CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1
    Text: MITSUBISHI MITSUBISHI NchNch IGBT IGBT CT60AM-18F CT60AM-18F INSULATED INSULATED GATE GATE BIPOLAR BIPOLAR TRANSISTOR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 4.0 ● VCES . 900V


    Original     		CT60AM-18F 20MAX. DIODE 10D2 CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1 PDF

    ct60am18b

    Abstract: BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm φ 3.2 4 wr ¡VCES . 900V ¡IC . 60A


    Original     		CT60AM-18B ct60am18b BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. « @ LJ/ 0.5 5.45 5.45 • V c e s . 900V o © • le .60A


    OCR Scan     		CT60AM-18F 20MAX. PDF

    CT60AM-18F

    Abstract: CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time
    Text: MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES . 900V


    Original     		CT60AM-18F 20MAX. CT60AM-18F CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time PDF

    IGBT 900v 60a

    Abstract: CT60AM-18F IGBT 60A CT60am IGBT IGBT tail time ct60am
    Text: MITSUBISHI Neh IGBT •§;> >>•+. :W> ^ ,^-s^ CT60AM-18F » ft ftud sxluö\ecl 1 * p- "TVi'S 's JJi, \\flVrts &T s°^ INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING • V c e s . 900V


    OCR Scan     		CT60AM-18F 00V/jis -20A/jis IGBT 900v 60a CT60AM-18F IGBT 60A CT60am IGBT IGBT tail time ct60am PDF

    IGBT CT60AM

    Abstract: CT60AM-18F
    Text: MITSUBISHI Neh IGBT CT60AM-18F -3 ;' \> V.aI i«'ai.Ssv>w8tì' 0 soW INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. <>3.2 •— D 0.5 5.45 5.45 • V c e s .900V


    OCR Scan     		CT60AM-18F 20MAX. IGBT CT60AM CT60AM-18F PDF

    ct60am

    Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V


    Original     		CT60AM-18B 20MAX. ct60am resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic PDF

    CT60AM-18F

    Abstract: IGBT 900v 60a ct60am18F ct60am DSA007480
    Text: MITSUBISHI Nch IGBT ARY CT60AM-18F MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN.


    Original     		CT60AM-18F 20MAX. CT60AM-18F IGBT 900v 60a ct60am18F ct60am DSA007480 PDF

    CT60AM-18B

    Abstract: resonant inverter IGBT CT60AM CT60AM18B ct60am
    Text: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT60AM-18B RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 2 •— ' V c e s . 900V ' l e .60A


    OCR Scan     		CT60AM-18B 20MAX. 57KH23 CT60AM-18B resonant inverter IGBT CT60AM CT60AM18B ct60am PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE Dimensions in mm OUTLINE DRAWING 5 ‘ 2 0.5 • VCES . 900V @ •3 © GATE COLLECTOR EMITTER COLLECTOR


    OCR Scan     		CT60AM-18B PDF

    transistor 3005

    Abstract: transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 20MAX. >3.2 «— © 0.5 5.45 5.45 • V ces . 1000V © © © GATE COLLECTOR EMITTER


    OCR Scan     		CT60AM-20 20MAX. T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S transistor 3005 transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201 PDF

    CT60AM-18F

    Abstract: IGBT tail time CT60AM-18F-AD MICROWAVE SEMICONDUCTORS CORP PRSS0004ZC-A
    Text: CT60AM-18F Insulated Gate Bipolar Transistor REJ03G1374-0200 Previous: MEJ02G0023-0101 Rev.2.00 Jul 07, 2006 Features • VCES : 900 V • IC : 60 A • Integrated fast-recovery diode Appearance Figure RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL)


    Original     		CT60AM-18F REJ03G1374-0200 MEJ02G0023-0101) PRSS0004ZC-A CT60AM-18F IGBT tail time CT60AM-18F-AD MICROWAVE SEMICONDUCTORS CORP PRSS0004ZC-A PDF

    CT60AM-18C

    Abstract: CT60AM-18C-AD MICROWAVE SEMICONDUCTORS CORP
    Text: CT60AM-18C Insulated Gate Bipolar Transistor REJ03G0287-0100 Rev.1.00 Aug.20.2004 Features • • • • VCES : 900 V IC : 60 A Integrated fast-recovery diode For voltage-resonance Appearance Figure TO-3PL 2, 4 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector


    Original     		CT60AM-18C REJ03G0287-0100 CT60AM-18C CT60AM-18C-AD MICROWAVE SEMICONDUCTORS CORP PDF