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    CTLDM30 Price and Stock

    Central Semiconductor Corp CP373-CTLDM303N-CT

    MOSFET N-CH 30V 3.6A DIE
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    Central Semiconductor Corp CP373-CTLDM303N-WN

    MOSFET N-CH 30V 3.6A DIE
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    Central Semiconductor Corp CTLDM303N-M832DS-TR

    MOSFET 2N-CH 30V 3.6A TLM832DS
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    CTLDM303N-M832DS-TR Digi-Reel 1
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    Central Semiconductor Corp CTLDM303N-M832DS-BK

    MOSFET 2N-CH 30V 3.6A TLM832DS
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    Central Semiconductor Corp CTLDM304P-M832DS-TR

    MOSFET 2P-CH 30V 4.2A TLM832DS
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    CTLDM30 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CTLDM303N-M832DS Central Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 12V 3.6A DL TLM832DS Original PDF
    CTLDM303N-M832DS BK Central Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET DUAL N-CHANNEL Original PDF
    CTLDM303N-M832DS TR Central Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 30V 3.6A TLM832DS Original PDF
    CTLDM304P-M832DS Central Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET P-CH 12V 4.2A DL TLM832DS Original PDF
    CTLDM304P-M832DS TR Central Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 30V 4.2A TLM832DS Original PDF

    CTLDM30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c330 TRANSISTOR

    Abstract: No abstract text available
    Text: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303NM832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient


    Original     		PDF CTLDM303N-M832DS CTLDM303NM832DS TLM832DS 54mm2 28-August c330 TRANSISTOR

    transistor c430

    Abstract: P-channel power mosfet mosfet 15v 10A
    Text: CTLDM304P-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM304P-M832DS is a dual enhancement-mode P-Channel silicon MOSFET designed for high speed pulsed amplifier and driver


    Original     		PDF CTLDM304P-M832DS TLM832DS transistor c430 P-channel power mosfet mosfet 15v 10A

    MOSFET 50V 100A

    Abstract: No abstract text available
    Text: RY A IN CTLDM301N IM L RE P SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM301N is an enhancement-mode N-channel MOSFET designed for applications including high speed pulsed amplifiers


    Original     		PDF CTLDM301N CTLDM301N 100mA INCTLDM301N MOSFET 50V 100A

    Untitled

    Abstract: No abstract text available
    Text: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver


    Original     		PDF CTLDM303N-M832DS TLM832DS 54mm2

    CTLDM30

    Abstract: No abstract text available
    Text: Product Brief CTLDM303N-M832DS 30V, 3.6A N-Channel CTLDM304P-M832DS (30V, 4.2A P-Channel) Dual, MOSFETs in the TLM832DS package TLM832DS Typical Electrical Characteristics Central Semiconductor’s CTLDM303N-M832DS (Dual, N-Channel) and CTLDM304P-M832DS (Dual, P-Channel) are enhancement-mode


    Original     		PDF CTLDM303N-M832DS CTLDM304P-M832DS TLM832DS TLM832DS CTLDM303N-M832DS CTLDM304P-M832DS 21x9x9 27x9x17 CTLDM30

    N and P MOSFET

    Abstract: No abstract text available
    Text: RY A IN CTLDM301N IM LSURFACE E MOUNT SILICON R P w w w. c e n t r a l s e m i . c o m N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM301N is a silicon N-channel enhancement-mode MOSFET designed for applications including high speed pulsed amplifiers


    Original     		PDF CTLDM301N CTLDM301N 100mA INCTLDM301N N and P MOSFET

    Untitled

    Abstract: No abstract text available
    Text: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303NM832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient


    Original     		PDF CTLDM303N-M832DS CTLDM303NM832DS TLM832DS 54mm2

    Untitled

    Abstract: No abstract text available
    Text: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver


    Original     		PDF CTLDM303N-M832DS TLM832DS 54mm2

    TMC248-LA

    Abstract: TMC248 datasheet
    Text: POWER DRIVER FOR STEPPER MOTORS INTEGRATED CIRCUITS TMC248 DATASHEET Low-cost stepper driver for two-phase bipolar motors with low noise PWM chopper and stallGuard . External MOSFETs fit different motor sizes. With SPI, classic analog interface, protection & diagnostics.


    Original     		PDF TMC248 2013-MAR-26) 2012-JUN-22 2013-MAR-26 TMC249 TMC32NP-PSO] TMC34NP-PSO] TMC32NP-PSO TMC34NP-PSO TMC248-LA TMC248 datasheet

    Untitled

    Abstract: No abstract text available
    Text: PROCESS CP773 MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 39 x 27 MILS Die Thickness 7.5 MILS Gate Bonding Pad Area 6.5 x 6.5 MILS Source Bonding Pad Area 30 x 20 MILS Top Side Metalization Al - 40,000Å Back Side Metalization


    Original     		PDF CP773 CMPDM302PH CTLDM304P-M832DS 18-October