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    CY62136V Price and Stock

    Rochester Electronics LLC CY62136VLL-55BAI

    IC SRAM 2MBIT PARALLEL 48FBGA
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    DigiKey CY62136VLL-55BAI Bulk 171
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    Infineon Technologies AG CY62136VLL-70ZSXE

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    Rochester Electronics LLC CY62136VLL-70ZSXE

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    DigiKey CY62136VLL-70ZSXE Tray 151
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    Rochester Electronics LLC CY62136VNLL-55ZSXA

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    DigiKey CY62136VNLL-55ZSXA Tray 62
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    Infineon Technologies AG CY62136VNLL-55ZSXA

    IC SRAM 2MBIT PARALLEL 44TSOP II
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    Find more CY62136V price and stock on Findchips.com

    CY62136V Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62136V Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136V Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62136V18 Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136V-70BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136V-70ZI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136VL-70BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136VL-70ZI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136VLL Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136VLL-55BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136VLL-55BAI Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62136VLL-55ZI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136VLL-55ZI Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62136VLL-55ZSI Cypress Semiconductor Original PDF
    CY62136VLL-55ZXI Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF
    CY62136VLL-70BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136VLL-70BAI Cypress Semiconductor 2M (128K x 16) Static RAM Original PDF
    CY62136VLL-70BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136VLL-70BAI Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136VLL-70BAIT Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY62136VLL-70ZI Cypress Semiconductor 128K x 16 Static RAM Original PDF

    CY62136V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CY62136VLL-70ZXI

    Abstract: CY62136V CY62136VLL
    Text: CY62136V MoBL 2-Mbit 128K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not


    Original     		CY62136V I/O15) CY62136VLL-70ZXI CY62136VLL PDF

    CY62136VLL

    Abstract: No abstract text available
    Text: CY62136V MoBL 2-Mbit 128K x 16 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly


    Original     		CY62136V 70-ns 44-pin CY62136CV30 CY62136VLL PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136VN MoBL 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C • High speed: 55 ns and 70 ns • Wide voltage range: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features


    Original     		CY62136VN 44-pin 48-ball PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136V MoBL 2M 128K x 16 Static RAM Features • • • • • • • • toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected


    Original     		CY62136V I/O15) 44-pin CY62136CV30 PDF

    CY62136VN

    Abstract: No abstract text available
    Text: CY62136VN MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when


    Original     		CY62136VN I/O15) PDF

    fbga 12 x 12 thermal resistance

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-05087 Spec Title: CY62136V MOBL R 2-MBIT (128K X 16) STATIC RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62136V MoBL 2-Mbit (128K x 16) Static RAM This is ideal for providing More Battery Life (MoBL®) in


    Original     		CY62136V 44-pin 48-ball fbga 12 x 12 thermal resistance PDF

    CY62136V

    Abstract: CY62136VLL-55ZI
    Text: 1 CY62136V MoBL 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V-3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		CY62136V CY62136V: CY62136VLL-55ZI PDF

    CY62136V

    Abstract: CY62136VLL-55ZI BA48 CY62136VLL-70ZI
    Text: CY62136V MoBL 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V−3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		CY62136V CY62136V: CY62136VLL-55ZI BA48 CY62136VLL-70ZI PDF

    62137A

    Abstract: No abstract text available
    Text: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell


    Original     		R52LD CY62136V/CY62137V CY62138V CY62136V/62137V/62138V 7C62136/7A) 7C62136A/62137A/62138A H137V-ZSIB CY62137V-ZSIB 30C/60 62137A PDF

    CY62136VN

    Abstract: No abstract text available
    Text: CY62136VN MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when


    Original     		CY62136VN I/O15) PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136FV30 MoBL PRELIMINARY 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62136V, CY62136CV30/CV33, CY62136EV30 • Ultra-low standby power — Typical standby current: 0.5 µA


    Original     		CY62136FV30 CY62136V, CY62136CV30/CV33, CY62136EV30 48-ball 44-pin PDF

    AN1064

    Abstract: CY62136VN
    Text: CY62136VN MoBL 2-Mbit 128K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected


    Original     		CY62136VN I/O15) AN1064 PDF

    CY62137V

    Abstract: CY62138V
    Text: Cypress Semiconductor Qualification Report QTP# 99075 VERSION 1.0 April, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor


    Original     		R52LD CY62136V/CY62137V CY62138V CY62136V/62137V/62138V 7C62136/7A) CY62136V/62137V/62138V R52LD-3 CY62137V 44-pin CY62137V CY62138V PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136V MoBL 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V−3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		CY62136V CY62136V: PDF

    CY62136V

    Abstract: CY62136V18
    Text: CY62136V MoBL CY62136V18 MoBL2™ 128K x 16 Static RAM Features put/output pins I/O0 through I/O 15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).


    Original     		CY62136V CY62136V18 CY62136V18: CY62136V: PDF

    CY62136V

    Abstract: CY62136VLL-55ZI CY62136
    Text: CY62136V MoBL 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V-3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		CY62136V CY62136V: CY62136VLL-55ZI CY62136 PDF

    CY62136V

    Abstract: CY62136CV30
    Text: 36CV30 CY62136CV30 MoBL 2M 128K x 16 Static RAM Features • • • • • • • • • High Speed: 55 ns and 70 ns availability Voltage range: 2.7V–3.3V Pin Compatible with the CY62136V Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz


    Original     		36CV30 CY62136CV30 CY62136V I/O15) CY62136CV30 CY62136V PDF

    CY62136V

    Abstract: CY62136VLL
    Text: CY62136V MoBL 2-Mbit 128K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not


    Original     		CY62136V I/O15) CY62136CV30 70-ns CY62136VLL PDF

    CY62135V18

    Abstract: CY7C1329 8355F
    Text: Cypress Semiconductor Product Qualification Report QTP# 003108 VERSION 1.0 December 2000 2 Meg FCP MoBL2  SRAM Family R52D-3, Fab 4 CY62135V18 CY62136V18/CY62137V18 128K x 16 Static RAM MoBL  and More Battery life are Trade mark of Cypress Semiconductor Corporation.


    Original     		R52D-3, CY62135V18 CY62136V18/CY62137V18 CY62136V18/CY62136V18/CY62137V18 R52D-3 CY7C1329-AC 30C/60 CY62135V18 CY7C1329 8355F PDF

    CY62136V

    Abstract: CY62136VLL
    Text: CY62136V MoBL 2-Mbit 128K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not


    Original     		CY62136V I/O15) CY62136VLL PDF

    CY62136VLL-70ZI

    Abstract: CY62136V CY62136V18 CY62136VLL-70BAI TE-05
    Text: CY62136V MoBL CY62136V18 MoBL2™ CYPRESS 1 2 8 K x Features S ta tic R A M put/output pins l/O 0 through l/O-ip; are placed in a high-impedance state when: deselected (CE HIGH), outputs are dis­ abled (OE HIGH), BHE and BLE ^ r e disabled (BHE, BLE


    OCR Scan     		CY62136V CY62136V18 CY62136V: CY62136VLL-70ZI CY62136VLL-70BAI TE-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62136V MoBL 128K x 16 Static R A M Features disabled B H E , B LE HIG H , or during a w rite operation (CE LOW, and W E LOW). • Low vo ltag e range: W ritin g to the device is a c c om p lish ed by taking chip enable (CE) and w rite enable (W E) inputs LOW. If byte low enable


    OCR Scan     		CY62136V PDF

    CY62136V

    Abstract: CY62136V-70BAI CY62136V-70ZI
    Text: CYPRESS PRELIMINARY CY62136V MoBL 12 8 K x Features 16 S ta tic R A M disabled B H E , BLE HIG H , o r during a w rite operation (CE LOW, and W E LOW ). • Low vo ltag e range: — 1 .8 V -3 .3 V • U ltra-lo w ac tiv e, s ta n d b y p o w er • Easy m e m o ry ex p a n sio n w ith C E and O E fea tu res


    OCR Scan     		CY62136V CY62136V-70BAI CY62136V-70ZI PDF

    Untitled

    Abstract: No abstract text available
    Text: CYPRESS PRELIMINARY CY62136V MoBL 1 2 8 K x 1 6 S ta tic R A M Features disabled B H E , BLE HIG H , o r during a w rite op era tion (CE LOW, and W E LOW ). • Low vo ltag e range: — 1 .8 V -3 .3 V • U ltra-lo w active, s ta n d b y p o w er • Easy m e m o ry ex p a n sio n w ith C E and O E fe a tu re s


    OCR Scan     		CY62136V PDF