Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CY62138CV25 Search Results

    CY62138CV25 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62138CV25 Cypress Semiconductor 2M (256K x 8) Static RAM Original PDF
    CY62138CV25LL-55BAI Cypress Semiconductor 2M (256K x 8) Static RAM Original PDF
    CY62138CV25LL-55BAI Cypress Semiconductor 256K x 8 Static RAM Original PDF
    CY62138CV25LL-55BVI Cypress Semiconductor Original PDF
    CY62138CV25LL-70BAI Cypress Semiconductor Original PDF
    CY62138CV25LL-70BAI Cypress Semiconductor 256K x 8 Static RAM Original PDF
    CY62138CV25LL-70BVI Cypress Semiconductor Original PDF

    CY62138CV25 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2-Mbit 256K x 8 Static RAM Functional Description [1] Features • • • • Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Pin compatible with CY62138CV25/30/33 Ultra low standby power The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features


    Original
    CY62138FV30 CY62138CV25/30/33 36-ball 32-pin PDF

    CY62138FV30LL-45BVXI

    Abstract: CY62138FV30 CY62138FV30LL CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI
    Text: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Functional Description [1] Features • • • • Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Pin compatible with CY62138CV25/30/33 Ultra low standby power The CY62138FV30 is a high performance CMOS static RAM


    Original
    CY62138FV30 CY62138CV25/30/33 32-pin CY62138FV30LL-45BVXI CY62138FV30LL CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI PDF

    CY62138CV

    Abstract: CY62138CV25 CY62138CV25LL CY62138CV30 CY62138CV30LL CY62138CV33 CY62138V
    Text: 38CV25/30/3 CY62138CV25/30/33 MoBL CY62138CV MoBL® 2M 256K x 8 Static RAM Features This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. The device also has


    Original
    38CV25/30/3 CY62138CV25/30/33 CY62138CV CY62138CV25: CY62138CV30: CY62138CV33: EnablY62138CV CY62138CV25 CY62138CV25LL CY62138CV30 CY62138CV30LL CY62138CV33 CY62138V PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Functional Description [1] Features • • • • Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Pin compatible with CY62138CV25/30/33 Ultra low standby power The CY62138FV30 is a high performance CMOS static RAM


    Original
    CY62138FV30 CY62138CV25/30/33 36-ball 32-pin PDF

    CY62138CV

    Abstract: CY62138CV25 CY62138CV25LL CY62138CV30 CY62138CV30LL CY62138CV33 CY62138V ultra fine pitch BGA
    Text: CY62138CV25/30/33 MoBL CY62138CV MoBL® 2M 256K x 8 Static RAM Features bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. The device also has


    Original
    CY62138CV25/30/33 CY62138CV CY62138CV25: CY62138CV30: CY62138CV33: CY62138CV25 CY62138CV25LL CY62138CV30 CY62138CV30LL CY62138CV33 CY62138V ultra fine pitch BGA PDF

    CY62138CV

    Abstract: CY62138CV25 CY62138CV25LL CY62138CV30 CY62138CV30LL CY62138CV33 CY62138V
    Text: CY62138CV25/30/33 MoBL CY62138CV MoBL® 2M 256K x 8 Static RAM Features bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. The device also has


    Original
    CY62138CV25/30/33 CY62138CV CY62138CV25: CY62138CV30: CY62138CV33: CY62138CV25 CY62138CV25LL CY62138CV30 CY62138CV30LL CY62138CV33 CY62138V PDF

    CY62138CV25

    Abstract: CY62138CV30 CY62138CV33 CY62138V
    Text: MoBL CY62138CV25/30/33 MoBL 2M 256K x 8 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. The device also has an automatic power-down feature that significantly reduces power consumption


    Original
    CY62138CV25/30/33 CY62138CV25: CY62138CV30: CY62138CV33: CY62138V CY62138CV25/30/33 CY62138CV25 CY62138CV30 CY62138CV33 CY62138V PDF

    CY62138CV25

    Abstract: CY62138CV30 CY62138CV33 CY62138V
    Text: MoBL CY62138CV25/30/33 ADVANCE INFORMATION MoBL 256K x 8 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ MoBL™ in portable applications. The device also has an automatic power-down feature that significantly reduces power consumption


    Original
    CY62138CV25/30/33 CY62138CV25: CY62138CV30: CY62138CV25/30/33 CY62138CV25 CY62138CV30 CY62138CV33 CY62138V PDF

    CY62138FV30

    Abstract: CY62138FV30LL CY62138FV30LL-45BVXI CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI
    Text: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Features Functional Description • Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ■ Wide Voltage Range: 2.20V to 3.60V ■ Pin Compatible with CY62138CV25/30/33


    Original
    CY62138FV30 CY62138CV25/30/33 CY62138FV30LL CY62138FV30LL-45BVXI CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Functional Description[1] Features • • • • Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Pin compatible with CY62138CV25/30/33 Ultra low standby power The CY62138FV30 is a high performance CMOS static RAM


    Original
    CY62138FV30 CY62138CV25/30/33 36-ball 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original
    CY62138FV30 PDF

    cy62138

    Abstract: CY62138FV30 CY62138FV30LL CY62138FV30LL-45BVXI CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI
    Text: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Features Functional Description The CY62138FV30[1] is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original
    CY62138FV30 cy62138 CY62138FV30LL CY62138FV30LL-45BVXI CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI PDF

    1024KX8

    Abstract: CY62138FV30LL-45ZXI
    Text: CY62138FV30 MoBL PRELIMINARY 2-Mbit 256K x 8 MoBL® Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62138FV30 is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.


    Original
    CY62138FV30 CY62138CV25/30/33 36-ball 32-pin 1024KX8 CY62138FV30LL-45ZXI PDF

    CY62138FV30

    Abstract: CY62138FV30LL CY62138FV30LL-45BVXI CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI 90-nm
    Text: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original
    CY62138FV30 CY62138FV30LL CY62138FV30LL-45BVXI CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI 90-nm PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62138FV30 MoBL 2-Mbit 256K x 8 MoBL® Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62138FV30 is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.


    Original
    CY62138FV30 CY62138CV25/30/33 36-ball 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Features Functional Description The CY62138FV30[1] is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original
    CY62138FV30 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original
    CY62138FV30 PDF

    CY62138FV30LL-45ZSXI

    Abstract: No abstract text available
    Text: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Features Functional Description The CY62138FV30[1] is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original
    CY62138FV30 CY62138FV30LL-45ZSXI PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original
    CY62138FV30 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original
    CY62138FV30 PDF