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    CY6214 Price and Stock

    Flip Electronics CY62147G30-45ZSXA

    IC SRAM 4MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62147G30-45ZSXA Tray 31,828 100
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    • 100 $5.5
    • 1000 $5.5
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    Flip Electronics CY62147EV30LL-45ZSXAT

    IC SRAM 4MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62147EV30LL-45ZSXAT Reel 18,000 200
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    Flip Electronics CY62146EV30LL-45ZSXI

    IC SRAM 4MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62146EV30LL-45ZSXI Tray 14,258 100
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    • 100 $5.47
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    Flip Electronics CY62147G30-55ZSXE

    IC SRAM 4MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62147G30-55ZSXE Tray 11,805 100
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    • 100 $5.92
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    Flip Electronics CY62147G30-45BVXI

    IC SRAM 4MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62147G30-45BVXI Bulk 7,864 150
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    • 1000 $4.07
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    Find more CY6214 price and stock on Findchips.com

    CY6214 Datasheets (440)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62143BVLL-70BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146BV18LL-70BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV18 Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV18LL-55BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV18LL-55BVI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV18LL-70BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV18LL-70BVI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV30 Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146CV30LL-55BAI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146CV30LL-55BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV30LL-55BVI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146CV30LL-55BVI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV30LL-70BAI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146CV30LL-70BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146CV30LL-70BVI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146CV30LL-70BVI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146DV30 Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146DV30L Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62146DV30L-55BVI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62146DV30L-55BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    ...

    CY6214 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C109-VC

    Abstract: No abstract text available
    Text: Cypress Semiconductor Qualification Report QTP# 98111 VERSION 2.0 June, 1999 4 Meg SRAM, R42H Technology, Hot Aluminum CY62148 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Manager 408 432-7069 Cypress Semiconductor, Inc.


    Original     		PDF CY62148 7C621485A) 32-pin CY62148 CY7C1049-VC CY7C1049-VCB 30C/60 CY7C109-VC

    CY62148E

    Abstract: CY62148ELL-45ZSXI CY62148B CY62148ELL CY62148ELL-55SXA CY62148ELL-55SXI CY62148e CY62148b
    Text: CY62148E MoBL 4-Mbit 512K x 8 Static RAM Functional Description [1] Features • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current.


    Original     		PDF CY62148E CY62148ELL-45ZSXI CY62148B CY62148ELL CY62148ELL-55SXA CY62148ELL-55SXI CY62148e CY62148b

    00107

    Abstract: No abstract text available
    Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when


    Original     		PDF CY62146E 44-pin 00107

    CY62148BLL-70SC

    Abstract: CY62148B CY62148BLL CY62148BLL-70SI CY62148BLL-70ZC CY62148BLL-70ZRC
    Text: CY62148B MoBL 4-Mbit 512K x 8 Static RAM Features is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 99% when deselected.


    Original     		PDF CY62148B 32-lead 450-mil) 32-lead 55-ns CY62148BLL-70SC CY62148BLL CY62148BLL-70SI CY62148BLL-70ZC CY62148BLL-70ZRC

    CY62143BVLL-70BAI

    Abstract: No abstract text available
    Text: 47V CY62143BV MoBL PRELIMINARY 256K x 16 Static RAM Features • Low voltage range: — CY62143BV: 2.7V–3.6V • Ultra-low active, standby power • Automatic power-down when deselected • TTL Compatible inputs and outputs • CMOS for optimum speed/power


    Original     		PDF CY62143BV CY62143BV: CY62143BVLL-70BAI

    CY62148E

    Abstract: VFBGA CY62148DV30 CY62148EV30 CY62148EV30LL CY62148EV30LL-45BVXI CY62148EV30LL-45ZSXA CY62148EV30LL-45ZSXI CY62148EV30LL-55SXI
    Text: MoBL CY62148EV30 4-Mbit 512K x 8 Static RAM Features Functional Description The CY62148EV30[2] is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62148EV30 CY62148EV30 CY62148E VFBGA CY62148DV30 CY62148EV30LL CY62148EV30LL-45BVXI CY62148EV30LL-45ZSXA CY62148EV30LL-45ZSXI CY62148EV30LL-55SXI

    Untitled

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 001-06517 Spec Title: CY62148BN MOBL R 4-MBIT (512K X 8) STATIC RAM Sunset Owner: Anuj Chakrapani (aju) Replaced by: NONE CY62148BN MoBL 4-Mbit (512K x 8) Static RAM Features Functional Description • 4.5V–5.5V operation


    Original     		PDF CY62148BN

    ultra fine pitch BGA

    Abstract: CY62147CV25 CY62147CV30 CY62147CV33 CY62147V
    Text: 47V CY62147CV25/30/33 MoBL 256K x 16 Static RAM Features cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are


    Original     		PDF CY62147CV25/30/33 I/O15) CY62147CV25: CY62147CV30: CY62147CV33: CY62147V CY62147CV25/30/33 ultra fine pitch BGA CY62147CV25 CY62147CV30 CY62147CV33 CY62147V

    CY62147CV25

    Abstract: CY62147CV30 CY62147CV33 CY62147DV30
    Text: CY62147DV30 4-Mbit 256K x 16 Static RAM Features vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces


    Original     		PDF CY62147DV30 I/O15) 70-ns 45-ns 44-lead CY62147CV25 CY62147CV30 CY62147CV33 CY62147DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH).


    Original     		PDF CY62146E 44-pin I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features cations such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when


    Original     		PDF CY62146E 44-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62147DV18 MoBL2 PRELIMINARY 4 Mb 256K x 16 Static RAM Features • • • • • • • • • mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable


    Original     		PDF CY62147DV18 CY62147CV18 48-ball I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62146EV30 MoBL 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when


    Original     		PDF CY62146EV30 CY62146DV30 48-ball 44-pin 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62147CV25/30/33 ADVANCE INFORMATION MoBL 256K x 16 Static RAM are placed in a high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).


    Original     		PDF CY62147CV25/30/33 CY62147CV25: CY62147CV30: CY62147CV33:

    Untitled

    Abstract: No abstract text available
    Text: 1May 7, 2001May 7, 2001*CY62147V MoBL CY62147CV25/30/33 ADVANCE INFORMATION MoBLTM 256K x 16 Static RAM Features and BHE are HIGH. The input/output pins I/O0 through I/O15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are


    Original     		PDF 2001May CY62147V CY62147CV25/30/33 CY62147CV25: CY62147CV30: CY62147CV33: I/O15)

    CY62148VLL-70ZI

    Abstract: CY62148V CY62148VL-70SI CY62148VL-70ZI CY62148VLL-70BAI CY62148VLL-70SI CY62148VL-70BAI
    Text: MoBL ADVANCED INFORMATION CY62148V MoBL 512K x 8 MoBL Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A 0 through A18).


    Original     		PDF CY62148V CY62148VLL-70ZI CY62148VL-70SI CY62148VL-70ZI CY62148VLL-70BAI CY62148VLL-70SI CY62148VL-70BAI

    CY62147BV18LL-70BAI

    Abstract: No abstract text available
    Text: 47V CY62147BV18 MoBL2 256K x 16 Static RAM Features • Low voltage range: — CY62147BV18: 1.65V–1.95V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		PDF CY62147BV18 CY62147BV18: CY62147V18 CY62147BV18LL-70BAI

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM Features Functional Description • Very high speed: 55 ns ■ Wide voltage range: 1.65 V to 2.25 V ■ Pin compatible with CY62147DV18 ■ Ultra low standby power ❐ Typical standby current: 1 A ❐ Maximum standby current: 7 A


    Original     		PDF CY62147EV18 CY62147DV18 48-ball

    CY62148

    Abstract: CY62148-55 CY62148-70SC CY62148-70ZSC CY62148L-70SC CY62148L-70ZSC ZS32
    Text: fax id: 1079 w CY62148 PRELIMINARY / C Y P R E S S 51 2 Kx 8 Features Static RAM an au tom atic pow er-dow n feature th a t reduces pow er co n ­ sum p tion by m ore tha n 99 % w h en deselected. • 4 .5 V -5 .5 V o peratio n W riting to th e device is accom plished by takin g chip enable


    OCR Scan     		PDF CY62148 CY62148 CY62148-55 CY62148-70SC CY62148-70ZSC CY62148L-70SC CY62148L-70ZSC ZS32

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1079 CY62148 PRELIMINARY W / C Y P R E S S _ 512Kx 8 Static RAM Features an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. • 4 .5V -5.5V operation • CMOS for optimum speed/power • Low active power


    OCR Scan     		PDF CY62148 512Kx

    32 pin soic 450mil

    Abstract: CY62128LL-70SI SOIC 32
    Text: fax id: 1079 W / CYPRESS PRELIMINARY_ CY62148 512 K x 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Features • 4.5V-5.5V operation • CMOS for optimum speed/power • Low active power


    OCR Scan     		PDF CY62148 32 pin soic 450mil CY62128LL-70SI SOIC 32

    Untitled

    Abstract: No abstract text available
    Text: CY62148V MoBL 512Kx 8 MoBL Static RAM Features • Low voltage range: — 1 .8 V - 3 . • • • • • • Ultra low active power Low standby power _ _ Easy memory expansion with CS- /CS2 and OE features TTL-compatible inputs and outputs Automatic power-down when deselected


    OCR Scan     		PDF CY62148V 512Kx

    Untitled

    Abstract: No abstract text available
    Text: A D V A N C E D CY62146V MoBL TM IN F O R M A T IO N 2 5 6 K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: -1 .8 V - 3 .3 V • • • • • Ultra low active, standby power Easy memory expansion with CE and OE features


    OCR Scan     		PDF CY62146V

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1079 CY62148 512K x 8 Static RAM an automatic power-down feature that reduces power con­ sumption by more than 99% when deselected. Featu res • 4.5V -5.5V operation • CMOS for optimum speed/power • Low active power Writing to the device is accomplished by taking chip enable


    OCR Scan     		PDF CY62148 Y62148-55S 62148L-55S Y62148-70S Y62148L-70SC CY62148-70SI CY62148L-70SI 32-Lead 450-Mil)