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    CY62146V Price and Stock

    Cypress Semiconductor CY62146VLL-70BAIT

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics CY62146VLL-70BAIT 3,899
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    Quest Components CY62146VLL-70BAIT 3,119
    • 1 $13.05
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    • 100 $13.05
    • 1000 $6.525
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    CY62146VLL-70BAIT 1,054
    • 1 $13.05
    • 10 $13.05
    • 100 $13.05
    • 1000 $4.5675
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    Cypress Semiconductor CY62146V18LL-70BAI

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    Bristol Electronics CY62146V18LL-70BAI 12
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    Cypress Semiconductor CY62146VLL-70BAI

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics CY62146VLL-70BAI 10
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    Quest Components CY62146VLL-70BAI 42
    • 1 $8.82
    • 10 $4.41
    • 100 $4.41
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    CY62146VLL-70BAI 36
    • 1 $15.75
    • 10 $14
    • 100 $12.95
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    CY62146VLL-70BAI 8
    • 1 $15.75
    • 10 $14
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    Cypress Semiconductor CY62146VLL-70ZI

    STANDARD SRAM, 256KX16, 70NS, CMOS, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CY62146VLL-70ZI 8
    • 1 $50
    • 10 $47.5
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    CY62146V Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62146V Cypress Semiconductor 4M (256K x 16) Static RAM Original PDF
    CY62146V18 Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146V18-85BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146VLL-70BAI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146VLL-70BAI Cypress Semiconductor 4M (256K x 16) Static RAM Original PDF
    CY62146VLL-70ZI Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY62146VLL-70ZI Cypress Semiconductor 4M (256K x 16) Static RAM Original PDF

    CY62146V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CY62146VLL-70ZI

    Abstract: CY62146V
    Text: 1*CY62146V MoBL CY62146V MoBL™ 256K x 16 Static RAM Features • Low voltage range: — CY62146V: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		CY62146V CY62146V CY62146V: CY62146VLL-70ZI PDF

    CY62146V18

    Abstract: No abstract text available
    Text: CY62146V18 MoBL2 256K x 16 Static RAM Features • Low voltage range: — CY62146V18: 1.75V–1.95V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		CY62146V18 CY62146V18: PDF

    CY62146V

    Abstract: CY62146VLL
    Text: CY62146V MoBL 4M 256K x 16 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected


    Original     		CY62146V 44-Pin CY62146CV30. CY62146VLL PDF

    CY62146V

    Abstract: CY62146VLL
    Text: CY62146V MoBL 4M 256K x 16 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected


    Original     		CY62146V 44-Pin CY62146CV30. CY62146VLL PDF

    CY62146VLL-70BAI

    Abstract: CY62146V CY62146VLL-70ZI
    Text: 46V CY62146V MoBL 256K x 16 Static RAM Features • Low voltage range: — CY62146V: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		CY62146V CY62146V: CY62146VLL-70BAI CY62146VLL-70ZI PDF

    CY62146V

    Abstract: CY62146V18 ZNS25
    Text: CY62146V MoBL CY62146V18 MoBL2™ 256K x 16 Static RAM put/output pins I/O0 through I/O 15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).


    Original     		CY62146V CY62146V18 CY62146V18: CY62146V: ZNS25 PDF

    CY62146V

    Abstract: CY62146VLL-70ZI
    Text: CY62146V MoBL 256K x 16 Static RAM Features • Low voltage range: — CY62146V: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected


    Original     		CY62146V CY62146V: CY62146VLL-70ZI PDF

    CY62146V

    Abstract: CY62146V18 CY62146VLL-70BAI
    Text: CY62146V MoBL CY62146V18 MoBL2™ 256K x 16 Static RAM Features put/output pins I/O0 through I/O 15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).


    Original     		CY62146V CY62146V18 CY62146V18: CY62146V: CY62146VLL-70BAI PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62146CV18 MoBL2 PRELIMINARY 256K x 16 Static RAM Features • Low voltage range: — CY62146CV18: 1.65V–1.95V • Pin Compatible with CY62146V18/BV18 • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs


    Original     		CY62146CV18 CY62146CV18: CY62146V18/BV18 I/O15) PDF

    lh62256

    Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
    Text: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s


    Original     		HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 HM628128 K6T1008C2 lh62256 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C PDF

    vhdl code for dice game

    Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
    Text: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer


    Original     		OC-48 CYS25G0101DX CYS25G0102 CYS25G01K100 CYP25G01K100 CY7C9536 CY7C955 CY7B952 CY7B951 10BASE vhdl code for dice game Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet PDF

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


    Original     		PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006 PDF

    8355F

    Abstract: 130C JESD22
    Text: Cypress Semiconductor Package Qualification Report QTP# 99331 VERSION 2.0 December, 2000 48 Lead Fine Pitch Ball Grid Array FBGA 7mm x 8.5mm ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069 Kim-Ngan Nguyen


    Original     		BA48G 48-ball O925255 CY62146VLL-BAIB 150C/-55) 8355F 130C JESD22 PDF

    M5M418165

    Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
    Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16


    Original     		Q4--2000 1Mx18 512Kx36 SE-597 x2255 M5M418165 NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620 PDF

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN PDF

    CYPRESS SAMSUNG CROSS REFERENCE

    Abstract: TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70
    Text: 7700 Irvine Center Dr. STE: 420 Irvine, CA 92618 Contact: Lena Patel email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277 Website: www.brilliancesemi.com SRAM CROSS REFERENCE Memory Size Operating Voltage SAMSUNG 1.2 ~ 2.4V 1.8 ~ 3.6V


    Original     		K6Y0808C1D BS62XV1024-25 BS62UV1024-15 BS62LV1024-70 BS62XV2000-25 BS62UV2000-15 BS62LV2000-10 BS62LV2000-70 BS62XV256-25 32Kx8 CYPRESS SAMSUNG CROSS REFERENCE TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70 PDF

    CY62146CV18

    Abstract: No abstract text available
    Text: CY62146CV18 MoBL2 256K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH . The input/output pins (I/O0 through I/O15) are


    Original     		CY62146CV18 I/O15) CY62146CV18: CY62146V18/BV18 CY62146BV18 CY62146CV18 PDF

    Untitled

    Abstract: No abstract text available
    Text: A D V A N C E D CY62146V MoBL TM IN F O R M A T IO N 2 5 6 K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: -1 .8 V - 3 .3 V • • • • • Ultra low active, standby power Easy memory expansion with CE and OE features


    OCR Scan     		CY62146V PDF

    Untitled

    Abstract: No abstract text available
    Text: V CYPRESS ADVANCED INFORMATION CY62146V MoBL T M 256K x 16 Static RAM disabled B H E , BLE HIG H , o r during a w rite op era tion (CE LOW, and W E LOW ). Features • Low vo ltag e range: -1 .8 V -3 .6 V • U ltra-lo w active, s ta n d b y p o w er • Easy m e m o ry e x p a n sio n w ith C E and O E fe a tu re s


    OCR Scan     		CY62146V PDF

    Untitled

    Abstract: No abstract text available
    Text: F/ CYPRESS ADVANCED INFORMATION 2 5 6 K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: - 1 . 8 V - 3 .6 V • • • • • CY62146V MoBL T M Ultra-low active, standby power Easy mem ory expansion with CE and OE features


    OCR Scan     		CY62146V CY62146VL-70ZI CY62146VL-70BAI CY62146VLL-70ZI CY62146VLL-70BAI 44-Pin 48-Ball PDF

    CY62146VLL-70BAI

    Abstract: A14C A15C CY62146V CY62146VL-70BAI
    Text: V CYPRESS ADVANCED INFORMATION 256K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: - 1 . 8 V - 3 .6 V • • • • • CY62146V MoBL T M Ultra-low active, standby power Easy memory expansion with CE and OE features


    OCR Scan     		CY62146V CY62146VL-70ZI 44-Pin CY62146VL-70BAI 48-Ball CY62146VLL-70ZI CY62146VLL-70BAI A14C A15C PDF

    CY62146V

    Abstract: CY62146V18
    Text: CY62146V MoBL CY62146V18 MoBL2™ V CYPRESS 256K x 16 Static RAM put/output pins I/Oq through I/0 1 5 are placed in a high-impedance state when: deselected (CE HIGH), outputs are dis­ abled (OE HIGH), BHE and BLE _are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).


    OCR Scan     		CY62146V18 CY62146V: CY62146V PDF