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    CY62157DV Search Results

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    CY62157DV Price and Stock

    Rochester Electronics LLC CY62157DV18L-70BVI

    IC SRAM 8MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV18L-70BVI Bulk 77
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    Rochester Electronics LLC CY62157DV20L-70BVI

    IC SRAM 8MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV20L-70BVI Bulk 96
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    Rochester Electronics LLC CY62157DV20L-55BVI

    IC SRAM 8MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV20L-55BVI Bulk 70
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    Rochester Electronics LLC CY62157DV30L-55ZSI

    IC SRAM 8MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62157DV30L-55ZSI Bulk 83
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    Infineon Technologies AG CY62157DV30L-55BVXE

    IC SRAM 8MBIT PARALLEL 48VFBGA
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    DigiKey CY62157DV30L-55BVXE Tray
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    Find more CY62157DV price and stock on Findchips.com

    CY62157DV Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62157DV18 Cypress Semiconductor Packages offered in a 48-ball FBGA Original PDF
    CY62157DV18L-55BVI Cypress Semiconductor 512K x 16 Static RAM Original PDF
    CY62157DV18L-55BVI Cypress Semiconductor Packages offered in a 48-ball FBGA Original PDF
    CY62157DV18L-70BVI Cypress Semiconductor Packages offered in a 48-ball FBGA Original PDF
    CY62157DV18L-70BVI Cypress Semiconductor 512K x 16 Static RAM Original PDF
    CY62157DV18LL-55BVI Cypress Semiconductor 512K x 16 Static RAM Original PDF
    CY62157DV18LL-55BVI Cypress Semiconductor Packages offered in a 48-ball FBGA Original PDF
    CY62157DV18LL-70BVI Cypress Semiconductor 512K x 16 Static RAM Original PDF
    CY62157DV18LL-70BVI Cypress Semiconductor Packages offered in a 48-ball FBGA Original PDF
    CY62157DV20 Cypress Semiconductor 512K x 16 Static RAM Original PDF
    CY62157DV20L-55BVI Cypress Semiconductor 8M (512K x 16) Static RAM Original PDF
    CY62157DV20L-70BVI Cypress Semiconductor 8M (512K x 16) Static RAM Original PDF
    CY62157DV20LL-55BVI Cypress Semiconductor 8M (512K x 16) Static RAM Original PDF
    CY62157DV30 Cypress Semiconductor 8-Mbit (512K x 16) MoBL(R) Static RAM Original PDF
    CY62157DV30L Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-45BVI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-45ZSXI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-45ZXI Cypress Semiconductor 8-Mbit (512K x 16) MoBL Static RAM Original PDF
    CY62157DV30L-55BVE Cypress Semiconductor 8-Mbit (512K x 16) MoBL(R) Static RAM Original PDF
    CY62157DV30L-55BVI Cypress Semiconductor Original PDF

    CY62157DV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		CY62157EV18 CY62157DV18 CY62157DV20 48-ball PDF

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		CY62157DV30 I/O15) 45-ns 70-ns CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L CY62157DV30LL PDF

    CY62157CV18

    Abstract: CY62157DV20
    Text: PRELIMINARY CY62157DV20 MoBL2 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed


    Original     		CY62157DV20 I/O15) 55-ns 70-ns CY62157CV18 CY62157CV18 PDF

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original     		CY62157DV30 I/O15) CY62157CV25, CY62157CV30, CY62157C. CY62157DV CY62157DV30 CY62157CV25 CY62157CV30 CY62157CV33 cy62157dv30l-55zxi PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62157DV MoBL PRELIMINARY 8 Mb 512K x 16 Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original     		CY62157DV CY62157CV25, CY62157CV30, CY62157CV33 48-ball 48-pin 44-pin PDF

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV
    Text: CY62157DV MoBL ADVANCE INFORMATION 8M 512K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are


    Original     		CY62157DV I/O15) CY62157CV25, CY62157CV30, CY62157CV33 CY62157DV CY62157CV25 CY62157CV30 CY62157CV33 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		CY62157EV18 CY62157DV18 CY62157DV20 I/O15) PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		CY62157DV30 CY62157CV25, CY62157CV30, CY62157CV33 48-ball 48-pin 44-pin 512Kodified 45-ns PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62157DV30 MoBL  8-Mbit 512K x 16 MoBL Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into


    Original     		CY62157DV30 CY62157CV25, CY62157CV30, CY62157CV33 48-ball 44-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		CY62157EV18 CY62157DV18 CY62157DV20 I/O15) PDF

    CY62157DV18LL-55

    Abstract: CY62157DV18LL-70BVI
    Text: PRELIMINARY CY62157DV18 MoBL2 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed


    Original     		CY62157DV18 I/O15) 55-ns 70-ns CY62157CV18 CY62157DV18LL-55 CY62157DV18LL-70BVI PDF

    CY62157CV18

    Abstract: CY62157DV20 CY62157DV20L-55BVI ultra fine pitch BGA BV48A
    Text: CY62157DV20 MoBL2 8M 512K x 16 Static RAM Features • • • • • • • • • Very high speed: 55 ns Wide voltage range: 1.65V to 2.2V Pin compatible with CY62157CV18 Ultra low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fmax


    Original     		CY62157DV20 CY62157CV18 48-ball CY62157DV20 CY62157CV18 CY62157DV20L-55BVI ultra fine pitch BGA BV48A PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		CY62157EV18 CY62157DV18 CY62157DV20 I/O15) PDF

    AN1064

    Abstract: CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30LL
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original     		CY62157DV30 I/O15) 48-Pin 45-ns 70-ns AN1064 CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30LL PDF

    CY62157EV30 MoBL

    Abstract: CY62157EV30LL-45ZSXI CY62157 AN1064 CY62157DV30 CY62157EV30 CY62157EV30LL DSA0025657
    Text: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby current: 2 µA


    Original     		CY62157EV30 CY62157DV30 48-ball 44-pin 48-pin CY62157EV30 MoBL CY62157EV30LL-45ZSXI CY62157 AN1064 CY62157DV30 CY62157EV30LL DSA0025657 PDF

    CY62157DV18L-55BVI

    Abstract: CY62157DV18
    Text: ADVANCE INFORMATION CY62157DV18 512K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH . The input/output pins (I/O0 through I/O15) are placed


    Original     		CY62157DV18 I/O15) CY62157DV18: CY62157CV18s CY62157DV18 CY62157CV18 CY62157DV18L-55BVI PDF

    CY62157DV30LL

    Abstract: CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features


    Original     		CY62157DV30 CY62157DV30 I/O15) C3115 CY62157DV 45-ns 70-ns CY62157DV30LL CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L PDF

    CY62157

    Abstract: CY62157DV30LL-45ZSXI CY62157DV30LL-45BVI
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features •Temperature Ranges — Industrial: –40°C to 85°C The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features


    Original     		CY62157DV30 CY62157CV25, CY62157CV30, CY62157CV33 48-ball 48-pin 44-pin CY62157DV CY62157 CY62157DV30LL-45ZSXI CY62157DV30LL-45BVI PDF

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		CY62157DV30 I/O15) 45-ns 70-ns CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L CY62157DV30LL PDF

    CY62157DV18

    Abstract: CY62157DV20 CY62157EV18
    Text: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A


    Original     		CY62157EV18 CY62157DV18 CY62157DV20 I/O15) CY62157DV20 PDF

    CY62157CV18

    Abstract: CY62157DV20 CY62157DV20L-55BVI ultra fine pitch BGA
    Text: CY62157DV20 MoBL2 8M 512K x 16 Static RAM Features • • • • • • • • • Very high speed: 55 ns Wide voltage range: 1.65V to 2.2V Pin compatible with CY62157CV18 Ultra low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 10 mA @ f = fmax


    Original     		CY62157DV20 CY62157CV18 48-ball CY62157DV20 CY62157CV18 CY62157DV20L-55BVI ultra fine pitch BGA PDF

    CY62157DV18LL-55BVI

    Abstract: CY62157CV18 CY62157DV18 CY62157DV18L-55BVI CY62157DV18LL
    Text: CY62157DV18 MoBL2 8M 512K x 16 Static RAM Features • • • • • • • • • power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH. The input/output pins (I/O0 through


    Original     		CY62157DV18 I/O15) CY62157CV18 CY62157DV18 CY62157DV18LL-55BVI CY62157CV18 CY62157DV18L-55BVI CY62157DV18LL PDF

    CY62157DV18LL

    Abstract: CY62157CV18 CY62157DV18 CY62157DV18L-55BVI
    Text: CY62157DV18 MoBL2 8M 512K x 16 Static RAM Features • • • • • • • • • power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH. The input/output pins (I/O0 through


    Original     		CY62157DV18 I/O15) CY62157CV18 CY62157DV18 CY62157DV18LL CY62157CV18 CY62157DV18L-55BVI PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62157DV MoBL PRELIMINARY 8 Mb 512K x 16 Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original     		CY62157DV CY62157CV25, CY62157CV30, CY62157CV33 48-ball 48-pin 44-pin PDF