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    CY62158DV Price and Stock

    Rochester Electronics LLC CY62158DV30L-55BVI

    IC SRAM 8MBIT PARALLEL 48VFBGA
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    DigiKey CY62158DV30L-55BVI Bulk 101
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    Rochester Electronics LLC CY62158DV30LL-55BVI

    IC SRAM 8MBIT PARALLEL 48VFBGA
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    DigiKey CY62158DV30LL-55BVI Bulk 43
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    Rochester Electronics LLC CY62158DV30LL-70BVXI

    SLOW 3.0V SUPER LOW POWER 512KX1
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    DigiKey CY62158DV30LL-70BVXI Bulk 85
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    Rochester Electronics LLC CY62158DV30LL-70ZSXI

    IC SRAM 8MBIT PARALLEL 44TSOP II
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    DigiKey CY62158DV30LL-70ZSXI Bulk 65
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    Cypress Semiconductor CY62158DV30LL-55BVI

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    Quest Components CY62158DV30LL-55BVI 84
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    Rochester Electronics CY62158DV30LL-55BVI 315 1
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    Find more CY62158DV price and stock on Findchips.com

    CY62158DV Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62158DV30 Cypress Semiconductor 8-Mbit (1024K x 8) MoBL(R) Static RAM Original PDF
    CY62158DV30L Cypress Semiconductor 8-Mbit (1024K x 8) MoBL Static RAM Original PDF
    CY62158DV30L-45BVI Cypress Semiconductor 8-Mbit (1024K x 8) MoBL Static RAM Original PDF
    CY62158DV30LL Cypress Semiconductor 8-Mbit (1024K x 8) MoBL Static RAM Original PDF
    CY62158DV30LL-55BVI Cypress Semiconductor 8-Mbit (1024K x 8) MoBL(R) Static RAM Original PDF
    CY62158DV30LL-55BVXI Cypress Semiconductor MoBL 8-Mbit (1024K x 8) Static RAM Original PDF
    CY62158DV30LL-55ZSXI Cypress Semiconductor MoBL 8-Mbit (1024K x 8) Static RAM Original PDF

    CY62158DV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-05391 Spec Title: CY62158DV30 MoBL, 8-Mbit 1024K x 8 MoBL Static RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62158DV30 MoBL 8-Mbit (1024K x 8) MoBL® Static RAM This is ideal for providing More Battery Life (MoBL®) in


    Original     		CY62158DV30 1024K CY62158DV30 CY62158DV PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62158DV MoBL PRELIMINARY 8 Mb 1024K x 8 MoBL Static RAM This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into


    Original     		CY62158DV 1024K 55-ns 48-ball 48-pin 44-pin PDF

    7688 memory chip

    Abstract: CY62157EV30 CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI
    Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM 8-Mbit (1024K x 8) Static RAM Features Functional Description [2] • Very high speed: 45 ns ❐ Wide voltage range: 2.20V–3.60V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A


    Original     		CY62158EV30 1024K CY62158DV30 7688 memory chip CY62157EV30 CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62158DV MoBL PRELIMINARY 8 Mb 1024K x 8 MoBL Static RAM This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into


    Original     		CY62158DV 1024K 55-ns CY62158DV PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A


    Original     		CY62158EV30 1024K PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A


    Original     		CY62158EV30 CY62158DV30 48-ball 44-pin 1024K PDF

    CY62157DV30

    Abstract: CY62158DV30 CY62158DV30L CY62158DV30L-45BVI CY62158DV30LL TSOP 48 thermal resistance junction to case
    Text: CY62158DV30 MoBL 8-Mbit 1024K x 8 MoBL Static RAM This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into


    Original     		CY62158DV30 1024K CY62158DV CY62158DV30 CY62157DV30 CY62158DV30L CY62158DV30L-45BVI CY62158DV30LL TSOP 48 thermal resistance junction to case PDF

    CY62158DV30LL-70BVI

    Abstract: CY62158DV30LL-55ZSXI CY62157DV30 CY62158DV30 CY62158DV30L CY62158DV30L-45BVI CY62158DV30LL
    Text: CY62158DV30 MoBL 8-Mbit 1024K x 8 MoBL Static RAM This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into


    Original     		CY62158DV30 1024K CY62158DV CY62158DV30 CY62158DV30LL-70BVI CY62158DV30LL-55ZSXI CY62157DV30 CY62158DV30L CY62158DV30L-45BVI CY62158DV30LL PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM 8-Mbit (1024K x 8) Static RAM Features Functional Description [2] • Very high speed: 45 ns ❐ Wide voltage range: 2.20V–3.60V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A


    Original     		CY62158EV30 1024K CY62158DV30 PDF

    CY62158EV30LL-45ZSXI

    Abstract: No abstract text available
    Text: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62158DV30 ■ Ultra low standby power ❐ Typical standby current: 2 A


    Original     		CY62158EV30 1024K CY62158EV30LL-45ZSXI PDF

    CY62157

    Abstract: CY62158DVL 51-85183 55BV
    Text: CY62158DV MoBL ADVANCE INFORMATION 1024K x 8 MoBL Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected CE1


    Original     		CY62158DV 1024K 55-ns 48-ball 48-pin CY62158DV CY62157 CY62158DVL 51-85183 55BV PDF

    7688 memory chip

    Abstract: CY62157EV30 CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI CY62158E CY62157
    Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description [2] Features • Very high speed: 45 ns The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current.


    Original     		CY62158EV30 1024K CY62157EV30 7688 memory chip CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI CY62158E CY62157 PDF

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		CY62157DV30 I/O15) 45-ns 70-ns CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L CY62157DV30LL PDF

    CY62157EV

    Abstract: No abstract text available
    Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description[2] Features • Very high speed: 45 ns The CY62158EV30 is a high-performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		CY62158EV30 1024K CY62158DV30 48-ball 44-pin 48-pin CY62157EV30 CY62157EV PDF

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original     		CY62157DV30 I/O15) CY62157CV25, CY62157CV30, CY62157C. CY62157DV CY62157DV30 CY62157CV25 CY62157CV30 CY62157CV33 cy62157dv30l-55zxi PDF

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV
    Text: CY62157DV MoBL ADVANCE INFORMATION 8M 512K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are


    Original     		CY62157DV I/O15) CY62157CV25, CY62157CV30, CY62157CV33 CY62157DV CY62157CV25 CY62157CV30 CY62157CV33 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		CY62157DV30 CY62157CV25, CY62157CV30, CY62157CV33 48-ball 48-pin 44-pin 512Kodified 45-ns PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62158EV30 MoBL 8-Mbit 1024 K x 8 Static RAM 8-Mbit (1024 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V–3.60 V The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features


    Original     		CY62158EV30 1024K PDF

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN PDF

    CY62157DV30LL

    Abstract: CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features


    Original     		CY62157DV30 CY62157DV30 I/O15) C3115 CY62157DV 45-ns 70-ns CY62157DV30LL CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L PDF

    CY62157

    Abstract: CY62157DV30LL-45ZSXI CY62157DV30LL-45BVI
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features •Temperature Ranges — Industrial: –40°C to 85°C The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features


    Original     		CY62157DV30 CY62157CV25, CY62157CV30, CY62157CV33 48-ball 48-pin 44-pin CY62157DV CY62157 CY62157DV30LL-45ZSXI CY62157DV30LL-45BVI PDF

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 CY62157DV30L CY62157DV30LL
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL® Static RAM Functional Description[1] Features • Temperature Ranges The CY62157DV30 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.


    Original     		CY62157DV30 I/O15) 45-ns 70-ns CY62157CV25 CY62157CV30 CY62157CV33 CY62157DV30L CY62157DV30LL PDF

    CY62157EV30

    Abstract: CY62157EV30 MoBL CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI
    Text: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description [2] Features • Very high speed: 45 ns The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current.


    Original     		CY62158EV30 1024K CY62157EV30 CY62157EV30 MoBL CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI PDF