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    CY6264 Price and Stock

    Infineon Technologies AG CY6264-70SNC

    IC SRAM 64KBIT PARALLEL 28SOIC
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    DigiKey CY6264-70SNC Tube
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    Infineon Technologies AG CY6264-55SNXI

    IC SRAM 64KBIT PARALLEL 28SOIC
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    DigiKey CY6264-55SNXI Tube
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    EBV Elektronik CY6264-55SNXI 26 Weeks 270
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    Infineon Technologies AG CY6264-70SNXA

    IC SRAM 64KBIT PARALLEL 28SOIC
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    DigiKey CY6264-70SNXA Tube 270
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    Infineon Technologies AG CY6264-70SNXC

    IC SRAM 64KBIT PARALLEL 28SOIC
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    Infineon Technologies AG CY6264-55SNXIT

    IC SRAM 64KBIT PARALLEL 28SOIC
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    DigiKey CY6264-55SNXIT Reel
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    EBV Elektronik CY6264-55SNXIT 26 Weeks 1,000
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    Find more CY6264 price and stock on Findchips.com

    CY6264 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY6264 Cypress Semiconductor 8K x 8 static RAM, 70ns Original PDF
    CY6264-55SC Cypress Semiconductor 8K x 8 Static RAM Original PDF
    CY6264-55SC Cypress Semiconductor 8K x 8 Static RAM Scan PDF
    CY6264-55SNC Cypress Semiconductor 8K x 8 Static RAM Original PDF
    CY6264-55SNC Cypress Semiconductor 8K x 8 Static RAM Scan PDF
    CY6264-55SNXC Cypress Semiconductor 8K x 8 Static RAM Original PDF
    CY6264-55SNXC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 64KBIT 55NS 28SOIC Original PDF
    CY6264-55SNXCT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 64KBIT 55NS 28SOIC Original PDF
    CY6264-55SNXI Cypress Semiconductor 8K x 8 Static RAM Original PDF
    CY6264-55SNXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 64KBIT 55NS 28SOIC Original PDF
    CY6264-55SNXIT Cypress Semiconductor 8K x 8 Static RAM; Density: 64 Kb; Organization: 8Kb x 8; Vcc (V): 4.50 to 5.50 V; Original PDF
    CY6264-55SNXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 64KBIT 55NS 28SOIC Original PDF
    CY6264-70SC Cypress Semiconductor 8K x 8 Static RAM Original PDF
    CY6264-70SC Cypress Semiconductor 8K x 8 Static RAM Scan PDF
    CY6264-70SNC Cypress Semiconductor 8K x 8 Static RAM Original PDF
    CY6264-70SNC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 64KBIT 70NS 28SOIC Original PDF
    CY6264-70SNC Cypress Semiconductor 8K x 8 Static RAM Scan PDF
    CY6264-70SNI Cypress Semiconductor 8K x 8 Static RAM Original PDF
    CY6264-70SNI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY6264-70SNXA Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 64KBIT 70NS 28SOIC Original PDF

    CY6264 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    soic 28

    Abstract: No abstract text available
    Text: CY6264 8K x 8 Static RAM Features power-down feature CE1 , reducing the power consumption by over 70% when deselected. The CY6264 is packaged in a 450-mil (300-mil body) SOIC. • 55, 70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CE1, CE2, and OE


    Original     		PDF CY6264 CY6264 450-mil 300-mil soic 28

    CY6264

    Abstract: No abstract text available
    Text: PRELIMINARY active HIGH chip enable CE2 , and active LOW output enable (OE) and threeĆstate D drivers. Both devices have an automatic D powerĆdown feature (CE ), reducing the power consumption by over1 70% when deĆ D selected. The CY6264 is in a 330ĆmilĆwide


    Original     		PDF CY6264 330milwide

    external RAM ic 6264

    Abstract: 6264 EPROM
    Text: CY9C6264 PRELIMINARY 8K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% Form, Fit, Function compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.


    Original     		PDF CY9C6264 CY6264 64-bytes CY9C6264 external RAM ic 6264 6264 EPROM

    CY6264

    Abstract: CY7C164 CY7C166 CY7C185 CY7C187
    Text: Qualification Report January 1997, QTP# 96453 Version 1.0 64K SRAM, RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C185/186 8K x 8 Static RAM, OE & CE, Common I/O CY6264 8K x 8 Static RAM, OE & CE, Common I/O CY7C161/162 16K x 4 Static RAM, OE & CE, Separate I/O


    Original     		PDF RAM28 CY7C185/186 CY6264 CY7C161/162 CY7C164 CY7C166 CY7C187 CY7C185 28-pin, 300-mil CY6264 CY7C164 CY7C166 CY7C185 CY7C187

    CY6264

    Abstract: hyundai CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C187 EME-6300H CY7C6264
    Text: Qualification Report December, 1994, QTP# 94446 Version 1.0 CY6264 8K x 8 Static R/W RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:


    Original     		PDF CY6264 CY7C6264 7C185B 15psig) 200mA CY6264 hyundai CY7C161 CY7C162 CY7C164 CY7C166 CY7C185 CY7C187 EME-6300H CY7C6264

    cy6264-70snxc

    Abstract: CY6264 CY6264-55SNXC CY6264-55SNXI CY6264-70SNC CY6264-70SNI CY6264-70SNXI
    Text: CY6264 8K x 8 Static RAM Features Functional Description • Temperature Ranges The CY6264 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), and active LOW output enable (OE)


    Original     		PDF CY6264 CY6264 450-mil 300-mil cy6264-70snxc CY6264-55SNXC CY6264-55SNXI CY6264-70SNC CY6264-70SNI CY6264-70SNXI

    STATIC RAM 6264

    Abstract: 6264 RAM 6264 RAM 6264 CY6264 CY6264-55SC CY6264-55SNC CY6264-55SNXC CY6264-70SC CY6264-70SNC
    Text: CY6264 8K x 8 Static RAM Features power-down feature CE1 , reducing the power consumption by over 70% when deselected. The CY6264 is packaged in a 450-mil (300-mil body) SOIC. • 55, 70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CE1, CE2, and OE


    Original     		PDF CY6264 CY6264 450-mil 300-mil STATIC RAM 6264 6264 RAM 6264 RAM 6264 CY6264-55SC CY6264-55SNC CY6264-55SNXC CY6264-70SC CY6264-70SNC

    CY6264

    Abstract: CY7C164 CY7C166 CY7C185 CY7C187
    Text: Qualification Report December 1996, QTP# 95311, Version 1.1 64K SRAM, RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C185/186 8K x 8 Static RAM, OE & CE, Common I/O CY6264 8K x 8 Static RAM, OE & CE, Common I/O CY7C161/162 16K x 4 Static RAM, OE & CE, Separate I/O


    Original     		PDF RAM28 CY7C185/186 CY6264 CY7C161/162 CY7C164 CY7C166 CY7C187 CY7C185 28-pin, 300-mil CY6264 CY7C164 CY7C166 CY7C185 CY7C187

    FeRAM

    Abstract: MRAM CY6264 CY9C6264 CY9C6264-70SI CY9C6264-70SNC CY9C6264-70SNI
    Text: PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features • 100% form, fit, function compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.


    Original     		PDF CY9C6264 CY6264 64-bytes CY9C6264 FeRAM MRAM CY6264 CY9C6264-70SI CY9C6264-70SNC CY9C6264-70SNI

    CY6264

    Abstract: CY6264-55SNXI CY6264-70SNXC
    Text: CY6264 8K x 8 Static RAM Features Functional Description • Temperature Ranges ❐ Commercial: 0°C to 70°C ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C The CY6264 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion


    Original     		PDF CY6264 CY6264 450-mil 300-mil CY6264-55SNXI CY6264-70SNXC

    STATIC RAM 6264

    Abstract: 6264 ram ram 6264 6264-70 6264 static RAM 6264, ram CY6264-70SNC 6264 CY6264 CY6264-2
    Text: 1CY 626 4 PRELIMINARY CY6264 8K x 8 Static RAM Features over 70% when deselected. The CY6264 is packaged in a 450-mil 300-mil body SOIC. • 55, 70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CE1, CE2, and OE features


    Original     		PDF CY6264 CY6264 450-mil 300-mil STATIC RAM 6264 6264 ram ram 6264 6264-70 6264 static RAM 6264, ram CY6264-70SNC 6264 CY6264-2

    CY6264-70SNXC

    Abstract: CY6264 CY6264-55SNXC CY6264-55SNXI CY6264-70SNC CY6264-70SNI CY6264-70SNXI 200-CE1
    Text: CY6264 8K x 8 Static RAM Features Functional Description • Temperature Ranges The CY6264 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), and active LOW output enable (OE)


    Original     		PDF CY6264 CY6264 450-mil 300-mil CY6264-70SNXC CY6264-55SNXC CY6264-55SNXI CY6264-70SNC CY6264-70SNI CY6264-70SNXI 200-CE1

    CY9C6264-70PC

    Abstract: No abstract text available
    Text: CY9C6264 PRELIMINARY 8K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form-, fit-, and function-compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.


    Original     		PDF CY9C6264 CY6264 64-bytes CY9C6264 CY9C6264-70PC

    CY62128

    Abstract: W24256 BSI winbond Cross Reference UT621024 CY6264 K6T0808C1D K6T0808V1D UT6264 W24257 W24258
    Text: Low-Power SRAM Cross Reference Guide 2 of 2 Density (bits) Org. (bits) 64K 8K*8 Company Part No. Operating Current mA (max.) (° C) Commercial Extended Industrial (0~70) (-20~85) (-40~85) Winbond W2465 UTRON UT6264 Cypress CY6264 100 W24256 60 Winbond 10 for LL


    Original     		PDF W2465 UT6264 CY6264 W24256 W24257 W24LH8 K6T0808C1D W24258 D-22083 CY62128 W24256 BSI winbond Cross Reference UT621024 CY6264 K6T0808C1D K6T0808V1D UT6264 W24257 W24258

    CY6264

    Abstract: CY9C6264 CY9C6264-70SI CY9C6264-70SNC CY9C6264-70SNI 22758 FeRAM
    Text: PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features • 100% form, fit, function compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.


    Original     		PDF CY9C6264 CY6264 64-bytes CY9C6264 CY6264 CY9C6264-70SI CY9C6264-70SNC CY9C6264-70SNI 22758 FeRAM

    CY7C185

    Abstract: CY6264 CY7C164 CY7C166 CY7C187
    Text: Qualification Report December 1996, QTP# 95515/96024 Version 2.1 64K SRAM, RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C185/186 8K x 8 Static RAM, OE & CE, Common I/O CY6264 8K x 8 Static RAM, OE & CE, Common I/O CY7C161/162 16K x 4 Static RAM, OE & CE, Separate I/O


    Original     		PDF RAM28 CY7C185/186 CY6264 CY7C161/162 CY7C164 CY7C166 CY7C187 CY7C185 28-pin, 300-mil CY7C185 CY6264 CY7C164 CY7C166 CY7C187

    Untitled

    Abstract: No abstract text available
    Text: CY6264-70SC-T2 1/2 IL16 ∗∗∗∗∗ C-MOS 64k (8k X 8) BIT STATIC –TOP VIEW– 1 NC VDD 28 (+5V) A4 2 21 27 WE 23 24 A5 3 26 CE2 25 2 A6 4 25 A3 A7 5 24 A2 A8 6 23 A1 3 4 5 6 7 8 A9 7 22 OE 9 10 A10 8 21 A0 26 20 CE1 A11 9 20 22 A12 10 19 I/O7 I/O0 11


    Original     		PDF CY6264-70SC-T2 CY6264-70

    Untitled

    Abstract: No abstract text available
    Text: CY6264 8 K x 8 Static RAM 8 K × 8 Static RAM Features Functional Description • Temperature ranges: ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C The CY6264 is a high-performance CMOS static RAM organized


    Original     		PDF CY6264 CY6264 450-mil 300-mil

    AN1064

    Abstract: CY6264 CY6264-55SNXI CY6264-70SNXC
    Text: CY6264 8 K x 8 Static RAM Features Functional Description • Temperature ranges: ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ High speed ❐ 55 ns ■ CMOS for optimum speed/power The CY6264 is a high-performance CMOS static RAM


    Original     		PDF CY6264 CY6264 450-mil 300-mil AN1064 CY6264-55SNXI CY6264-70SNXC

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY T R ^ cy pr ess CY6264 8 K x 8 Static R A M Features • 55 ,7 0 ns access times • CMOS for optimum speed/power • Easy memory expansion with CEi, CEj , and OE features • TTL-compatible inputs and outputs • Automatic power-down when dese­


    OCR Scan     		PDF CY6264 330-m 6264--70SC

    STATIC RAM 6264

    Abstract: 6264 static RAM 6264 RAM ram 6264 6264 CY6264 OC821 62645
    Text: PRELIMINARY CYPRESS CY6264 8K x 8 Static RAM active HIGH chip enable CE2 , and active LOW output enable (OE) and three-state drivers. Both devices have an automatic power-down feature (CEi), reducing the power consumption by over 70% when de­ selected. The CY6264 is packaged in a


    OCR Scan     		PDF CY6264 CY6264is CY6264 450-mil 300-mil D017EtD STATIC RAM 6264 6264 static RAM 6264 RAM ram 6264 6264 OC821 62645

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS CY6264 8K x 8 Static RAM Features • 55,70 ns access times • CMOS for optimum speed/power • Easy memory expansion with CEj, CE2, and OE features • TTL-compatible inputs and outputs • Automatic power-down when dese­ lected F unctional D escription


    OCR Scan     		PDF CY6264 Y6264 CY6264 330-mil-wide CY6264â 28-Lead 330-Mil

    6264-70

    Abstract: No abstract text available
    Text: CY6264 P YP v « *1 X X 8K x 8 Static RAM over 70% when deselected. The CY6264 is packaged in a 450-mil 300-mil body SOIG. Features • 55, 70 n s a c c e s s t im e s • C M O S for o p t i m u m s p e e d / p o w e r • E a s y m e m o r y e x p a n s i o n w ith CE., C E 2, and O E f e a ­


    OCR Scan     		PDF CY6264 CY6264 450-mil 300-mil 6264-70

    STATIC RAM 6264

    Abstract: ram 6264 Hyundai Semiconductor 6264 Hyundai 6264 DD172 CY6264
    Text: CYPRESS PRELIMINARY CY6264 8K x 8 Static RAM Features active HIGH chip enable CE2 , and active LOW output enable (OE) and three-state • 55,70 ns access times drivers. Both devices have an automatic • CMOS for optimum speed/power power-down feature (CEi), reducing the


    OCR Scan     		PDF CY6264 CY6264is 450-mil 300-mil 25iHbb2 STATIC RAM 6264 ram 6264 Hyundai Semiconductor 6264 Hyundai 6264 DD172