Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CY7C1006 Search Results

    SF Impression Pixel

    CY7C1006 Price and Stock

    Rochester Electronics LLC CY7C1006B-15VC

    IC SRAM 1MBIT PARALLEL 28SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1006B-15VC Bulk 156
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.92
    • 10000 $1.92
    Buy Now

    Rochester Electronics LLC CY7C1006B-20VC

    IC SRAM 1MBIT PARALLEL 28SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1006B-20VC Bulk 155
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.94
    • 10000 $1.94
    Buy Now

    Infineon Technologies AG CY7C1006D-10VXI

    IC SRAM 1MBIT PARALLEL 28SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1006D-10VXI Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Infineon Technologies AG CY7C1006B-15VXC

    IC SRAM 1MBIT PARALLEL 28SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1006B-15VXC Tube 1,296
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $2.35073
    Buy Now

    Rochester Electronics LLC CY7C1006B-15VCT

    IC SRAM 1MBIT PARALLEL 28SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1006B-15VCT Bulk 135
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.24
    • 10000 $2.24
    Buy Now

    CY7C1006 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1006 Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C1006-12PC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C1006-12PC Cypress Semiconductor 256K x 4 Static RAM Scan PDF
    CY7C1006-12VC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C1006-12VC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C1006-12VC Cypress Semiconductor 256K x 4 Static RAM Scan PDF
    CY7C1006-15DMB Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C1006-15DMB Cypress Semiconductor 256K x 4 Static RAM Scan PDF
    CY7C1006-15PC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C1006-15PC Cypress Semiconductor 256K x 4 Static RAM Scan PDF
    CY7C1006-15VC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C1006-15VC Cypress Semiconductor 256K x 4 Static RAM Scan PDF
    CY7C1006-20DMB Cypress Semiconductor 256K x 4 Static RAM Scan PDF
    CY7C1006-20PC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C1006-20PC Cypress Semiconductor 256K x 4 Static RAM Scan PDF
    CY7C1006-20VC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C1006-20VC Cypress Semiconductor 256K x 4 Static RAM Scan PDF
    CY7C1006-25DMB Cypress Semiconductor 256K x 4 Static RAM Scan PDF
    CY7C1006-25PC Cypress Semiconductor 256K x 4 Static RAM Scan PDF
    CY7C1006-25VC Cypress Semiconductor 256K x 4 Static RAM Original PDF

    CY7C1006 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C106B4

    Abstract: C106B CY7C1006B CY7C106B c106b1 equivalent
    Text: 006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.


    Original
    PDF CY7C106B CY7C1006B CY7C106B, CY7C1006B C106B4 C106B CY7C106B c106b1 equivalent

    CY7C1006D

    Abstract: CY7C106D CY7C106D-10VXI 7C106D
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D 83MHz, 66MHz 40MHz 100MHz, CY7C106D-10VXI 7C106D

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D

    C1006

    Abstract: CY7C1006 C1006-9 C1006-10
    Text: PRELIMINARY CY7C1006 256K x 4 Static RAM Features D D D D D D Functional Description The CY7C1006 is a highĆperformance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable CE , an active LOW output enable (OE),


    Original
    PDF CY7C1006 CY7C1006 C1006 C1006-9 C1006-10

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D PRELIMINARY 1-Mbit 256K x 4 Static RAM Functional Description[1] Features The CY7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C1006D CY7C106D,

    c1069

    Abstract: C1061 pin configuration C1061 CY7C1061 C1061 equivalent CY7C10612 7C106 C106 CY7C1006 CY7C106
    Text: 006 CY7C106 CY7C1006 256K x 4 Static RAM Features an active LOW output enable OE , and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed


    Original
    PDF CY7C106 CY7C1006 CY7C106, CY7C1006 c1069 C1061 pin configuration C1061 CY7C1061 C1061 equivalent CY7C10612 7C106 C106 CY7C106

    C106B

    Abstract: CY7C1006B CY7C106B 7C106B-12
    Text: CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed


    Original
    PDF CY7C106B CY7C1006B C106B CY7C1006B CY7C106B 7C106B-12

    C1006

    Abstract: CY7C1006 C1006 transistor Transistor c1006
    Text: 1CY 7C10 06 PRELIMINARY CY7C1006 256K x 4 Static RAM Features output enable OE , and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed — tAA = 12 ns • CMOS for optimum speed/power


    Original
    PDF CY7C1006 C1006 CY7C1006 C1006 transistor Transistor c1006

    C106B2

    Abstract: c106b1 equivalent C106B C106B4 C106B3 C106B TO-2
    Text: CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.


    Original
    PDF 1CY7C1006B CY7C106B CY7C1006B CY7C106B/CY7C1006B C106B2 c106b1 equivalent C106B C106B4 C106B3 C106B TO-2

    1709 013

    Abstract: CY7C1006D CY7C106D CY7C106D-10VXI
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D 83MHz, 66MHz 40MHz 100MHz, 1709 013 CY7C106D-10VXI

    Untitled

    Abstract: No abstract text available
    Text: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA


    Original
    PDF CY7C106D CY7C1006D CY7C106B/CY7C1006B CY7C106D CY7C1006D

    C106B

    Abstract: CY7C1006B CY7C106B CY7C1006B-15VC c106b1 equivalent
    Text: CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.


    Original
    PDF 1CY7C1006B CY7C106B CY7C1006B CY7C106B, CY7C1006B C106B CY7C106B CY7C1006B-15VC c106b1 equivalent

    C1061

    Abstract: CY7C1061 C106A transistor c106 C106 CY7C1006 CY7C106 C1066 C1065 C1062
    Text: CY7C106 CY7C1006 256K x 4 Static RAM Features an active LOW output enable OE , and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed — tAA = 12 ns


    Original
    PDF CY7C106 CY7C1006 C1061 CY7C1061 C106A transistor c106 C106 CY7C1006 CY7C106 C1066 C1065 C1062

    CY7C1006BN

    Abstract: CY7C106BN
    Text: CY7C106BN CY7C1006BN 256K x 4 Static RAM Features Functional Description The CY7C106BN and CY7C1006BN are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and


    Original
    PDF CY7C106BN CY7C1006BN CY7C106BN CY7C1006BN CY7C106BN/CY7C1006BN

    A10C

    Abstract: CY7C1006
    Text: CYPRESS SEMICO NDU CTOR MbE » I aSflìbbé QD0ti7Q4 T • CY7C1006 ADVANCED INFORMATION. CYPRESS SEMICONDUCTOR 256K x 4 Static R/W RAM Features Functional Description • Highspeed — U a = 15 ns • CMOS for optimum speed/power • Low active power — 800mW


    OCR Scan
    PDF CY7C1006 800mW CY7C1006 CY7CI006 300-mil-wideDIPs 7C1006â A10C

    Untitled

    Abstract: No abstract text available
    Text: 7S C Y P R E S S CY7C1006 p r e l im in a r y 256Kx 4 Static RAM Features Functional Description • High speed T he CY7C1006 is a high-perform ance CM OS static RA M organized as 262,144 words by 4 bits. Easy m em ory expansion is provided by an active LO W chip enable


    OCR Scan
    PDF CY7C1006 256Kx CY7C1006

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1052 W CY7C106 CY7C1006 / C Y P R E S S _ 256K x 4 Static RAM an active LO W o u tp u t enable OE , and th re e -sta te drivers. T h e se devices have an au tom atic pow e r-d ow n fea tu re th a t re­ du ces pow er con sum p tion by m ore than 65% w h e n th e d e vic­


    OCR Scan
    PDF CY7C106 CY7C1006

    Untitled

    Abstract: No abstract text available
    Text: ÏS W CYPRESS SEMICONDUCTOR 256Kx 4 Static RAM Features Functional Description • High speed T h e CY7C1006 is a high-perform ance CM O S static R A M organized as 262,144 w ords by 4 bits. Easy m em ory expansion is p rovided by an active L O W chip enable


    OCR Scan
    PDF CY7C1006 CY7C1006 256Kx 1006--25PC 7C1006--25V 7C1006--25DM 8--00201--A

    C1061 pin configuration

    Abstract: CY7C1006 CY7C106 CY7C1061
    Text: fax id: 1052 w / CY7C106 CY7C1006 C Y P R E S S 256K x 4 Static RAM an active LOW output enable OE , and three-state drivers. These devices have an automatic power-down feature that re­ duces power consumption by more than 65% when the devic­ es are deselected.


    OCR Scan
    PDF CY7C106 CY7C1006 CY7C1006 C1061 pin configuration CY7C1061

    Untitled

    Abstract: No abstract text available
    Text: 7c10 0 6 :1 1-25-91 Revision: Tuesday, December 22,1992 CY7C1006 PRELIMINARY CYPRESS sÈr SEMICONDUCTOR 256K x 4 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power The CY7C1006 is a high-performance CMOS static RAM organized as 262,144


    OCR Scan
    PDF CY7C1006 CY7C1006

    Untitled

    Abstract: No abstract text available
    Text: ss 256Kx 4 Static RAM Features Functional Description • High speed T h e CY7C1006 is a high-perform ance C M O S static R A M organized as 262,144 w ords by 4 bits. Easy m em ory expansion is provided by an active L O W chip e nable C E , an active L O W o u tp u t enable (O E ),


    OCR Scan
    PDF 256Kx CY7C1006 CY7C1006

    CY7C1006

    Abstract: No abstract text available
    Text: CY7C1006 PRELIMINARY JL Jfc JL * JLwl 256K x 4 Static RAM Features Functional Description • High speed The CY7C1006 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan
    PDF CY7C1006 256Kx CY7C1006

    Untitled

    Abstract: No abstract text available
    Text: : CY7C1006 ADVANCED INFORMATION SEMICONDUCTOR 2 5 6 K x 4 Static R/W RAM Features Functional Description • H ighspeed T h e C Y 7 C 1 0 0 6 is a h ig h -p e rfo rm a n c e C M O S s ta tic R A M o rg a n iz e d a s 262,144 w o rd s by 4 bits. E a sy m e m o ry e x p a n sio n is


    OCR Scan
    PDF CY7C1006

    Untitled

    Abstract: No abstract text available
    Text: CY7C1006 PRELIMINARY 256Kx 4 Static RAM Features Functional Description • High speed The CY7C1006 is a high-performance CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW chip enable CE , an active LOW output enable (UE),


    OCR Scan
    PDF CY7C1006 256Kx CY7C1006